DE69119820D1 - Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern - Google Patents
Halbleiteranordnung mit verringten zeitabhängigen dielektrischen FehlernInfo
- Publication number
- DE69119820D1 DE69119820D1 DE69119820T DE69119820T DE69119820D1 DE 69119820 D1 DE69119820 D1 DE 69119820D1 DE 69119820 T DE69119820 T DE 69119820T DE 69119820 T DE69119820 T DE 69119820T DE 69119820 D1 DE69119820 D1 DE 69119820D1
- Authority
- DE
- Germany
- Prior art keywords
- errors
- reduced time
- semiconductor arrangement
- dependent dielectric
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000036962 time dependent Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51016490A | 1990-04-16 | 1990-04-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119820D1 true DE69119820D1 (de) | 1996-07-04 |
DE69119820T2 DE69119820T2 (de) | 1997-01-23 |
Family
ID=24029623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119820T Expired - Fee Related DE69119820T2 (de) | 1990-04-16 | 1991-04-12 | Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern |
Country Status (7)
Country | Link |
---|---|
US (2) | US5471081A (de) |
EP (1) | EP0452829B1 (de) |
JP (1) | JPH0818045A (de) |
KR (1) | KR940008569B1 (de) |
AU (1) | AU638812B2 (de) |
CA (1) | CA2040396C (de) |
DE (1) | DE69119820T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
DE4333661C1 (de) * | 1993-10-01 | 1995-02-16 | Daimler Benz Ag | Halbleiterbauelement mit hoher Durchbruchsspannung |
WO1997037426A1 (en) * | 1995-03-31 | 1997-10-09 | National Semiconductor Corporation | Pierce crystal oscillator having reliable startup for integrated circuits |
US5602410A (en) * | 1995-08-25 | 1997-02-11 | Siemens Aktiengesellschaft | Off-state gate-oxide field reduction in CMOS |
JPH1168105A (ja) * | 1997-08-26 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置 |
US5998848A (en) * | 1998-09-18 | 1999-12-07 | International Business Machines Corporation | Depleted poly-silicon edged MOSFET structure and method |
JP4581159B2 (ja) * | 1998-10-08 | 2010-11-17 | ソニー株式会社 | 半導体装置およびその製造方法 |
US6228696B1 (en) * | 1998-11-05 | 2001-05-08 | Vantis Corporation | Semiconductor-oxide-semiconductor capacitor formed in integrated circuit |
US6479862B1 (en) | 2000-06-22 | 2002-11-12 | Progressant Technologies, Inc. | Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
US6512274B1 (en) * | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
US6724655B2 (en) * | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
US6747318B1 (en) * | 2001-12-13 | 2004-06-08 | Lsi Logic Corporation | Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides |
US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
US6933548B1 (en) | 2001-12-21 | 2005-08-23 | Synopsys, Inc. | Negative differential resistance load element |
US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
US6795337B2 (en) * | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
US6853035B1 (en) * | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
US6979580B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
JP4490336B2 (ja) * | 2005-06-13 | 2010-06-23 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2010123990A (ja) * | 2010-01-18 | 2010-06-03 | Sharp Corp | 半導体装置およびその製造方法 |
US8383443B2 (en) * | 2010-05-14 | 2013-02-26 | International Business Machines Corporation | Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing |
US9984894B2 (en) * | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
EP3942614A4 (de) * | 2020-04-22 | 2022-08-03 | Yangtze Memory Technologies Co., Ltd. | Variabler kondensator |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1165575A (en) * | 1966-01-03 | 1969-10-01 | Texas Instruments Inc | Semiconductor Device Stabilization. |
US3663870A (en) * | 1968-11-13 | 1972-05-16 | Tokyo Shibaura Electric Co | Semiconductor device passivated with rare earth oxide layer |
JPS4844585B1 (de) * | 1969-04-12 | 1973-12-25 | ||
US3767483A (en) * | 1970-05-11 | 1973-10-23 | Hitachi Ltd | Method of making semiconductor devices |
JPS5277592A (en) * | 1975-12-24 | 1977-06-30 | Hitachi Ltd | Production of semiconductor device |
US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
US4216574A (en) * | 1978-06-29 | 1980-08-12 | Raytheon Company | Charge coupled device |
JPS5530888A (en) * | 1978-08-17 | 1980-03-04 | Plessey Handel Investment Ag | Method of forming semiconductor field effect structure |
GB2049273B (en) * | 1979-05-02 | 1983-05-25 | Philips Electronic Associated | Method for short-circuting igfet source regions to a substrate |
US4479831A (en) * | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
US4486943A (en) * | 1981-12-16 | 1984-12-11 | Inmos Corporation | Zero drain overlap and self aligned contact method for MOS devices |
NL8203870A (nl) * | 1982-10-06 | 1984-05-01 | Philips Nv | Halfgeleiderinrichting. |
JPS60154569A (ja) * | 1984-01-24 | 1985-08-14 | Nec Corp | Mis型電界効果トランジスタ |
US4755865A (en) * | 1986-01-21 | 1988-07-05 | Motorola Inc. | Means for stabilizing polycrystalline semiconductor layers |
US4978631A (en) * | 1986-07-25 | 1990-12-18 | Siliconix Incorporated | Current source with a process selectable temperature coefficient |
JPS63255964A (ja) * | 1987-04-14 | 1988-10-24 | Toshiba Corp | 半導体装置 |
AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
-
1991
- 1991-03-22 AU AU73678/91A patent/AU638812B2/en not_active Ceased
- 1991-04-12 EP EP91105891A patent/EP0452829B1/de not_active Expired - Lifetime
- 1991-04-12 DE DE69119820T patent/DE69119820T2/de not_active Expired - Fee Related
- 1991-04-15 CA CA002040396A patent/CA2040396C/en not_active Expired - Fee Related
- 1991-04-15 KR KR1019910005988A patent/KR940008569B1/ko not_active IP Right Cessation
- 1991-04-15 JP JP3082700A patent/JPH0818045A/ja active Pending
-
1993
- 1993-03-04 US US08/026,625 patent/US5471081A/en not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/472,134 patent/US5523603A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5523603A (en) | 1996-06-04 |
CA2040396A1 (en) | 1991-10-17 |
KR940008569B1 (ko) | 1994-09-24 |
CA2040396C (en) | 1995-08-22 |
JPH0818045A (ja) | 1996-01-19 |
EP0452829A2 (de) | 1991-10-23 |
US5471081A (en) | 1995-11-28 |
EP0452829A3 (en) | 1992-01-08 |
AU7367891A (en) | 1991-10-17 |
DE69119820T2 (de) | 1997-01-23 |
KR910019174A (ko) | 1991-11-30 |
EP0452829B1 (de) | 1996-05-29 |
AU638812B2 (en) | 1993-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |