JPS5530888A - Method of forming semiconductor field effect structure - Google Patents

Method of forming semiconductor field effect structure

Info

Publication number
JPS5530888A
JPS5530888A JP10450679A JP10450679A JPS5530888A JP S5530888 A JPS5530888 A JP S5530888A JP 10450679 A JP10450679 A JP 10450679A JP 10450679 A JP10450679 A JP 10450679A JP S5530888 A JPS5530888 A JP S5530888A
Authority
JP
Japan
Prior art keywords
field effect
semiconductor field
forming semiconductor
effect structure
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10450679A
Other languages
Japanese (ja)
Inventor
Richiyaado Sandaazu Ian
Jieremii Guriinut Kurisutofuaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Publication of JPS5530888A publication Critical patent/JPS5530888A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
JP10450679A 1978-08-17 1979-08-16 Method of forming semiconductor field effect structure Pending JPS5530888A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7833642 1978-08-17

Publications (1)

Publication Number Publication Date
JPS5530888A true JPS5530888A (en) 1980-03-04

Family

ID=10499110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10450679A Pending JPS5530888A (en) 1978-08-17 1979-08-16 Method of forming semiconductor field effect structure

Country Status (2)

Country Link
JP (1) JPS5530888A (en)
DE (1) DE2933455A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057116A (en) * 1991-05-02 1993-01-14 Alpine Electron Inc Equalizer
JPH0818045A (en) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> Semiconductor device having decreased time dependency dielectric breakdown
JP2002170889A (en) * 2000-11-30 2002-06-14 Nec Corp Semiconductor device and manufacturing method thereof
JP2014527717A (en) * 2011-08-03 2014-10-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Formation of SiCMOSFET with high channel mobility by treating oxide interface with cesium ions

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3146339C2 (en) * 1981-11-23 1984-03-08 Black & Decker, Inc. (eine Gesellschaft n.d.Ges.d. Staates Delaware), 19711 Newark, Del. Method for determining and setting the working torque of a power tool with a universal motor
EP0213972A1 (en) * 1985-08-30 1987-03-11 SILICONIX Incorporated Method for shifting the threshold voltage of DMOS transistors
US4827324A (en) * 1986-11-06 1989-05-02 Siliconix Incorporated Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818045A (en) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> Semiconductor device having decreased time dependency dielectric breakdown
JPH057116A (en) * 1991-05-02 1993-01-14 Alpine Electron Inc Equalizer
JPH0588008B2 (en) * 1991-05-02 1993-12-20 Alpine Electronics Inc
JP2002170889A (en) * 2000-11-30 2002-06-14 Nec Corp Semiconductor device and manufacturing method thereof
JP2014527717A (en) * 2011-08-03 2014-10-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Formation of SiCMOSFET with high channel mobility by treating oxide interface with cesium ions

Also Published As

Publication number Publication date
DE2933455A1 (en) 1980-03-06

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