DE69122902D1 - Halbleiteranordnung mit einem Thyristor - Google Patents
Halbleiteranordnung mit einem ThyristorInfo
- Publication number
- DE69122902D1 DE69122902D1 DE69122902T DE69122902T DE69122902D1 DE 69122902 D1 DE69122902 D1 DE 69122902D1 DE 69122902 T DE69122902 T DE 69122902T DE 69122902 T DE69122902 T DE 69122902T DE 69122902 D1 DE69122902 D1 DE 69122902D1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9008020A GB2243021A (en) | 1990-04-09 | 1990-04-09 | Mos- gated thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69122902D1 true DE69122902D1 (de) | 1996-12-05 |
DE69122902T2 DE69122902T2 (de) | 1997-04-30 |
Family
ID=10674152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1991622902 Expired - Fee Related DE69122902T2 (de) | 1990-04-09 | 1991-04-05 | Halbleiteranordnung mit einem Thyristor |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0454201B1 (de) |
JP (1) | JPH0793422B2 (de) |
DE (1) | DE69122902T2 (de) |
GB (1) | GB2243021A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5381026A (en) | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
EP0487869B1 (de) * | 1990-11-29 | 1997-02-12 | Asea Brown Boveri Ag | Abschaltbares Leistungshalbleiter-Bauelement |
DE4121375A1 (de) * | 1991-06-28 | 1993-01-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
JPH0575110A (ja) * | 1991-09-13 | 1993-03-26 | Fuji Electric Co Ltd | 半導体装置 |
JP2739002B2 (ja) * | 1991-12-20 | 1998-04-08 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2509127B2 (ja) * | 1992-03-04 | 1996-06-19 | 財団法人半導体研究振興会 | 静電誘導デバイス |
JP2957795B2 (ja) * | 1992-03-16 | 1999-10-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US5324966A (en) * | 1992-04-07 | 1994-06-28 | Toyo Denki Seizo Kabushiki Kaisha | MOS-controlled thyristor |
JP2796470B2 (ja) * | 1992-05-06 | 1998-09-10 | 三菱電機株式会社 | 自己消弧型サイリスタおよびその製造方法 |
US5777346A (en) * | 1996-01-16 | 1998-07-07 | Harris Corporation | Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench |
US7656003B2 (en) * | 2006-08-25 | 2010-02-02 | Hvvi Semiconductors, Inc | Electrical stress protection apparatus and method of manufacture |
JP5698302B2 (ja) * | 2013-04-25 | 2015-04-08 | 株式会社日立製作所 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5125116B1 (de) * | 1970-10-08 | 1976-07-28 | ||
JPS509156A (de) * | 1973-05-29 | 1975-01-30 | ||
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
JPS5961962A (ja) * | 1982-09-30 | 1984-04-09 | Matsushita Electric Works Ltd | 絶縁ゲ−ト型サイリスタ |
JPH0620127B2 (ja) * | 1984-04-11 | 1994-03-16 | 株式会社明電舍 | Gtoサイリスタ |
EP0159663A3 (de) * | 1984-04-26 | 1987-09-23 | General Electric Company | Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung |
US4982258A (en) * | 1988-05-02 | 1991-01-01 | General Electric Company | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
EP0487869B1 (de) * | 1990-11-29 | 1997-02-12 | Asea Brown Boveri Ag | Abschaltbares Leistungshalbleiter-Bauelement |
-
1990
- 1990-04-09 GB GB9008020A patent/GB2243021A/en not_active Withdrawn
-
1991
- 1991-04-05 EP EP91200798A patent/EP0454201B1/de not_active Expired - Lifetime
- 1991-04-05 DE DE1991622902 patent/DE69122902T2/de not_active Expired - Fee Related
- 1991-04-09 JP JP3103448A patent/JPH0793422B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0454201A2 (de) | 1991-10-30 |
JPH04312977A (ja) | 1992-11-04 |
GB2243021A (en) | 1991-10-16 |
EP0454201A3 (en) | 1991-11-06 |
DE69122902T2 (de) | 1997-04-30 |
GB9008020D0 (en) | 1990-06-06 |
EP0454201B1 (de) | 1996-10-30 |
JPH0793422B2 (ja) | 1995-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |