DE69330978T2 - Halbleiteranordnung mit einem Schutzmittel - Google Patents

Halbleiteranordnung mit einem Schutzmittel

Info

Publication number
DE69330978T2
DE69330978T2 DE69330978T DE69330978T DE69330978T2 DE 69330978 T2 DE69330978 T2 DE 69330978T2 DE 69330978 T DE69330978 T DE 69330978T DE 69330978 T DE69330978 T DE 69330978T DE 69330978 T2 DE69330978 T2 DE 69330978T2
Authority
DE
Germany
Prior art keywords
semiconductor device
protective agent
protective
agent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330978T
Other languages
English (en)
Other versions
DE69330978D1 (de
Inventor
Paul Arthur Gough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics UK Ltd
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics UK Ltd, Koninklijke Philips Electronics NV filed Critical Philips Electronics UK Ltd
Application granted granted Critical
Publication of DE69330978D1 publication Critical patent/DE69330978D1/de
Publication of DE69330978T2 publication Critical patent/DE69330978T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Control Of Electrical Variables (AREA)
  • Protection Of Static Devices (AREA)
DE69330978T 1992-04-09 1993-04-01 Halbleiteranordnung mit einem Schutzmittel Expired - Fee Related DE69330978T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929207849A GB9207849D0 (en) 1992-04-09 1992-04-09 A semiconductor device

Publications (2)

Publication Number Publication Date
DE69330978D1 DE69330978D1 (de) 2001-11-29
DE69330978T2 true DE69330978T2 (de) 2002-05-29

Family

ID=10713769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330978T Expired - Fee Related DE69330978T2 (de) 1992-04-09 1993-04-01 Halbleiteranordnung mit einem Schutzmittel

Country Status (5)

Country Link
US (1) US5442216A (de)
EP (1) EP0565179B1 (de)
JP (1) JP3294895B2 (de)
DE (1) DE69330978T2 (de)
GB (1) GB9207849D0 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.
JP3173268B2 (ja) * 1994-01-06 2001-06-04 富士電機株式会社 Ｍｉｓ電界効果トランジスタを備えた半導体装置
JP3361874B2 (ja) * 1994-02-28 2003-01-07 三菱電機株式会社 電界効果型半導体装置
EP0788656B1 (de) * 1994-10-28 2000-08-16 Siemens Aktiengesellschaft Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5684305A (en) * 1995-06-07 1997-11-04 Harris Corporation Pilot transistor for quasi-vertical DMOS device
EP0752593A3 (de) * 1995-07-07 1998-01-07 Siemens Aktiengesellschaft Verfahren zur Früherkennung von Ausfällen bei Leistungshalbleitermodulen
EP0768714B1 (de) * 1995-10-09 2003-09-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Herstellungsverfahren für Leistungsanordnung mit Schutzring
DE69533134T2 (de) * 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
EP0772242B1 (de) * 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (de) * 1995-12-28 2001-04-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung in integrierter Struktur
KR100200485B1 (ko) * 1996-08-08 1999-06-15 윤종용 모스 트랜지스터 및 그 제조방법
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
EP0961325B1 (de) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
DE10122846C2 (de) * 2001-05-11 2003-05-22 Infineon Technologies Ag Halbleiterbauelement mit hochspannungstauglichem Randabschluss
GB0122120D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in MOS transistors
US7045857B2 (en) * 2004-03-26 2006-05-16 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
EP1691484B1 (de) * 2005-02-10 2016-08-17 STMicroelectronics Srl Thermische Schutzvorrichtung für einen integrierten MOS Leistungstransistor
JP2009088317A (ja) * 2007-10-01 2009-04-23 Panasonic Corp 高耐圧半導体スイッチング素子
CN102522427B (zh) 2008-01-29 2014-07-30 富士电机株式会社 半导体装置
JP7080166B2 (ja) * 2018-12-21 2022-06-03 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP2023123945A (ja) * 2022-02-25 2023-09-06 株式会社日立製作所 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3352915A (en) * 1963-03-19 1967-11-14 Rohm & Haas Process for the preparation of nitrogenand fluorine-containing ethers
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
US4553084A (en) * 1984-04-02 1985-11-12 Motorola, Inc. Current sensing circuit
JPS61182264A (ja) * 1985-02-08 1986-08-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4962411A (en) * 1986-03-21 1990-10-09 Nippondenso Co., Ltd. Semiconductor device with current detecting function
JP2552880B2 (ja) * 1986-11-12 1996-11-13 シリコニックス・インコーポレイテッド 垂直ｄｍｏｓセル構造
EP0293846A1 (de) * 1987-06-05 1988-12-07 Siemens Aktiengesellschaft MIS-Leistunsgstransistor
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability
JPH0777262B2 (ja) * 1988-04-19 1995-08-16 日本電気株式会社 縦型電界効果トランジスタ
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ
US4980740A (en) * 1989-03-27 1990-12-25 General Electric Company MOS-pilot structure for an insulated gate transistor
US5034796A (en) * 1989-06-07 1991-07-23 Ixys Corporation Simplified current sensing structure for MOS power devices
JPH0397269A (ja) * 1989-09-11 1991-04-23 Fuji Electric Co Ltd 電流制限回路を内蔵する伝導度変調型ｍｏｓｆｅｔ
JP2876694B2 (ja) * 1990-03-20 1999-03-31 富士電機株式会社 電流検出端子を備えたｍｏｓ型半導体装置
JPH07105340B2 (ja) * 1992-10-06 1995-11-13 名古屋大学長 完全無欠陥表面を作成する方法

Also Published As

Publication number Publication date
GB9207849D0 (en) 1992-05-27
JP3294895B2 (ja) 2002-06-24
EP0565179A2 (de) 1993-10-13
US5442216A (en) 1995-08-15
JPH0629539A (ja) 1994-02-04
DE69330978D1 (de) 2001-11-29
EP0565179A3 (de) 1993-10-27
EP0565179B1 (de) 2001-10-24

Similar Documents

Publication Publication Date Title
DE69325608D1 (de) Halbleiterbauelement mit einem Schutzmittel
DE69330978D1 (de) Halbleiteranordnung mit einem Schutzmittel
DE69332329T2 (de) Halbleiteranordnung
DE69332960D1 (de) Halbleiteranordnung
DE69318705T2 (de) Kurzschlussbegrenzende schutzvorrichtung
NO922106L (no) Beskyttelsesanordning for selv-refraktile sproeyter
DE69328743T2 (de) Halbleiteranordnung
DE69334253D1 (de) Halbleitervorrichtung
DE69325951D1 (de) Halbleitervorrichtung
DE69413961T2 (de) Schutzvorrichtung
DE69312554T2 (de) Robotereinrichtung
DE69325241D1 (de) Überspannungsschutzeinrichtung
DE69620507D1 (de) Halbleiteranordnung mit einer Schutzvorrichtung
DE69316675T2 (de) Halbleiterbauelement mit einem Schutzmittel
DE69722150D1 (de) Halbleiteranordnung mit einem Schutzmittel
DE69421758T2 (de) Halbleiteranordnung mit einem Schutzmittel
DE69122902T2 (de) Halbleiteranordnung mit einem Thyristor
EP0480582A3 (en) A semiconductor device with a protective element
DE69203317T2 (de) Temperaturschutzvorrichtung in einem begrentzen temperaturgebiet.
DE69631460D1 (de) Halbleiteranordung mit einem Schutzmittel
DE69333792D1 (de) Halbleiteranordnung
DE69325181D1 (de) Halbleitervorrichtung
DE9316091U1 (de) Schutzeinrichtung
DE9318891U1 (de) Schutzvorrichtung
FI920275A (fi) Suojalaite

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee