DE69122902T2 - Halbleiteranordnung mit einem Thyristor - Google Patents

Halbleiteranordnung mit einem Thyristor

Info

Publication number
DE69122902T2
DE69122902T2 DE1991622902 DE69122902T DE69122902T2 DE 69122902 T2 DE69122902 T2 DE 69122902T2 DE 1991622902 DE1991622902 DE 1991622902 DE 69122902 T DE69122902 T DE 69122902T DE 69122902 T2 DE69122902 T2 DE 69122902T2
Authority
DE
Germany
Prior art keywords
thyristor
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991622902
Other languages
English (en)
Other versions
DE69122902D1 (de
Inventor
Paul Arthur Gough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69122902D1 publication Critical patent/DE69122902D1/de
Publication of DE69122902T2 publication Critical patent/DE69122902T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
DE1991622902 1990-04-09 1991-04-05 Halbleiteranordnung mit einem Thyristor Expired - Fee Related DE69122902T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9008020A GB2243021A (en) 1990-04-09 1990-04-09 Mos- gated thyristor

Publications (2)

Publication Number Publication Date
DE69122902D1 DE69122902D1 (de) 1996-12-05
DE69122902T2 true DE69122902T2 (de) 1997-04-30

Family

ID=10674152

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991622902 Expired - Fee Related DE69122902T2 (de) 1990-04-09 1991-04-05 Halbleiteranordnung mit einem Thyristor

Country Status (4)

Country Link
EP (1) EP0454201B1 (de)
JP (1) JPH0793422B2 (de)
DE (1) DE69122902T2 (de)
GB (1) GB2243021A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381026A (en) 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
EP0487869B1 (de) * 1990-11-29 1997-02-12 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiter-Bauelement
DE4121375A1 (de) * 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
JP2739002B2 (ja) * 1991-12-20 1998-04-08 三菱電機株式会社 半導体装置及びその製造方法
JP2509127B2 (ja) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 静電誘導デバイス
JP2957795B2 (ja) * 1992-03-16 1999-10-06 三菱電機株式会社 半導体装置及びその製造方法
US5324966A (en) * 1992-04-07 1994-06-28 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor
JP2796470B2 (ja) * 1992-05-06 1998-09-10 三菱電機株式会社 自己消弧型サイリスタおよびその製造方法
US5777346A (en) * 1996-01-16 1998-07-07 Harris Corporation Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture
JP5698302B2 (ja) * 2013-04-25 2015-04-08 株式会社日立製作所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125116B1 (de) * 1970-10-08 1976-07-28
JPS509156A (de) * 1973-05-29 1975-01-30
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
JPS5961962A (ja) * 1982-09-30 1984-04-09 Matsushita Electric Works Ltd 絶縁ゲ−ト型サイリスタ
JPH0620127B2 (ja) * 1984-04-11 1994-03-16 株式会社明電舍 Ｇｔｏサイリスタ
EP0159663A3 (de) * 1984-04-26 1987-09-23 General Electric Company Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
EP0487869B1 (de) * 1990-11-29 1997-02-12 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiter-Bauelement

Also Published As

Publication number Publication date
JPH0793422B2 (ja) 1995-10-09
GB2243021A (en) 1991-10-16
DE69122902D1 (de) 1996-12-05
JPH04312977A (ja) 1992-11-04
EP0454201B1 (de) 1996-10-30
EP0454201A2 (de) 1991-10-30
GB9008020D0 (en) 1990-06-06
EP0454201A3 (en) 1991-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee