DE69316675T2 - Halbleiterbauelement mit einem Schutzmittel - Google Patents

Halbleiterbauelement mit einem Schutzmittel

Info

Publication number
DE69316675T2
DE69316675T2 DE69316675T DE69316675T DE69316675T2 DE 69316675 T2 DE69316675 T2 DE 69316675T2 DE 69316675 T DE69316675 T DE 69316675T DE 69316675 T DE69316675 T DE 69316675T DE 69316675 T2 DE69316675 T2 DE 69316675T2
Authority
DE
Germany
Prior art keywords
semiconductor device
protective agent
protective
agent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69316675T
Other languages
English (en)
Other versions
DE69316675D1 (de
Inventor
Paul Arthur Gough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69316675D1 publication Critical patent/DE69316675D1/de
Publication of DE69316675T2 publication Critical patent/DE69316675T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69316675T 1992-07-23 1993-07-20 Halbleiterbauelement mit einem Schutzmittel Expired - Fee Related DE69316675T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929215654A GB9215654D0 (en) 1992-07-23 1992-07-23 A semiconductor component

Publications (2)

Publication Number Publication Date
DE69316675D1 DE69316675D1 (de) 1998-03-05
DE69316675T2 true DE69316675T2 (de) 1998-07-30

Family

ID=10719169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316675T Expired - Fee Related DE69316675T2 (de) 1992-07-23 1993-07-20 Halbleiterbauelement mit einem Schutzmittel

Country Status (5)

Country Link
US (1) US5362980A (de)
EP (1) EP0580242B1 (de)
JP (1) JPH06188424A (de)
DE (1) DE69316675T2 (de)
GB (1) GB9215654D0 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018113146A1 (de) * 2018-06-01 2019-12-05 Infineon Technologies Ag Gleichrichtereinrichtung und Halbleitereinrichtung
DE102018113145A1 (de) * 2018-06-01 2019-12-05 Infineon Technologies Ag Gleichrichtereinrichtung

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69327320T2 (de) * 1993-09-30 2000-05-31 Cons Ric Microelettronica Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
JP2611639B2 (ja) * 1993-11-25 1997-05-21 日本電気株式会社 半導体装置
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
JP3911566B2 (ja) * 1998-01-27 2007-05-09 富士電機デバイステクノロジー株式会社 Ｍｏｓ型半導体装置
JP2002231971A (ja) * 2001-02-02 2002-08-16 Sharp Corp 半導体集積回路装置、その製造方法、ｉｃモジュール、ｉｃカード
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US7605446B2 (en) * 2006-07-14 2009-10-20 Cambridge Semiconductor Limited Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
JP6098041B2 (ja) * 2012-04-02 2017-03-22 富士電機株式会社 半導体装置
US9029250B2 (en) * 2013-09-24 2015-05-12 Infineon Technologies Austria Ag Method for producing semiconductor regions including impurities

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059770A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
IT1213411B (it) * 1986-12-17 1989-12-20 Sgs Microelettronica Spa Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
US5023692A (en) * 1989-12-07 1991-06-11 Harris Semiconductor Patents, Inc. Power MOSFET transistor circuit
JPH0465878A (ja) * 1990-07-06 1992-03-02 Fuji Electric Co Ltd 半導体装置
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
JP2633746B2 (ja) * 1991-05-27 1997-07-23 株式会社東芝 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018113146A1 (de) * 2018-06-01 2019-12-05 Infineon Technologies Ag Gleichrichtereinrichtung und Halbleitereinrichtung
DE102018113145A1 (de) * 2018-06-01 2019-12-05 Infineon Technologies Ag Gleichrichtereinrichtung
US10547250B2 (en) 2018-06-01 2020-01-28 Infineon Technologies Ag Rectifier device
DE102018113146B4 (de) * 2018-06-01 2020-02-06 Infineon Technologies Ag Gleichrichtereinrichtung und Halbleitereinrichtung
US10666158B2 (en) 2018-06-01 2020-05-26 Infineon Technologies Ag Rectifier device
DE102018113145B4 (de) 2018-06-01 2020-06-04 Infineon Technologies Ag Gleichrichtereinrichtung

Also Published As

Publication number Publication date
JPH06188424A (ja) 1994-07-08
EP0580242B1 (de) 1998-01-28
GB9215654D0 (en) 1992-09-09
DE69316675D1 (de) 1998-03-05
US5362980A (en) 1994-11-08
EP0580242A1 (de) 1994-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee