IT1213411B - Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. - Google Patents

Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.

Info

Publication number
IT1213411B
IT1213411B IT8622719A IT2271986A IT1213411B IT 1213411 B IT1213411 B IT 1213411B IT 8622719 A IT8622719 A IT 8622719A IT 2271986 A IT2271986 A IT 2271986A IT 1213411 B IT1213411 B IT 1213411B
Authority
IT
Italy
Prior art keywords
lasua
manufacture
protection device
power mos
device against
Prior art date
Application number
IT8622719A
Other languages
English (en)
Other versions
IT8622719A0 (it
Inventor
Frisina Ferruccio
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8622719A priority Critical patent/IT1213411B/it
Publication of IT8622719A0 publication Critical patent/IT8622719A0/it
Priority to EP87202309A priority patent/EP0271942A3/en
Priority to US07/366,212 priority patent/US4916085A/en
Application granted granted Critical
Publication of IT1213411B publication Critical patent/IT1213411B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
IT8622719A 1986-12-17 1986-12-17 Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. IT1213411B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8622719A IT1213411B (it) 1986-12-17 1986-12-17 Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.
EP87202309A EP0271942A3 (en) 1986-12-17 1987-11-25 Mos power structure with protective device against overvoltages and manufacturing process therefor
US07/366,212 US4916085A (en) 1986-12-17 1989-06-15 MOS power structure with protective device against overvoltages and manufacturing process therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8622719A IT1213411B (it) 1986-12-17 1986-12-17 Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.

Publications (2)

Publication Number Publication Date
IT8622719A0 IT8622719A0 (it) 1986-12-17
IT1213411B true IT1213411B (it) 1989-12-20

Family

ID=11199626

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8622719A IT1213411B (it) 1986-12-17 1986-12-17 Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.

Country Status (3)

Country Link
US (1) US4916085A (it)
EP (1) EP0271942A3 (it)
IT (1) IT1213411B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1229318B (it) * 1989-05-02 1991-08-08 Sgs Thomson Microelectronics Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore.
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
US5273917A (en) * 1989-08-19 1993-12-28 Fuji Electric Co., Ltd. Method for manufacturing a conductivity modulation MOSFET
DE69029180T2 (de) * 1989-08-30 1997-05-22 Siliconix Inc Transistor mit Spannungsbegrenzungsanordnung
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
GB9215654D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A semiconductor component
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
EP0656152A1 (en) * 1992-08-14 1995-06-07 International Business Machines Corporation Mos device having protection against electrostatic discharge
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.
US5432369A (en) * 1992-10-29 1995-07-11 Oki Electric Industry Co., Ltd. Input/output protection circuit
US5420451A (en) * 1993-11-30 1995-05-30 Siliconix Incorporated Bidirectional blocking lateral MOSFET with improved on-resistance
US5466951A (en) * 1993-12-08 1995-11-14 Siemens Aktiengesellschaft Controllable power semiconductor element with buffer zone and method for the manufacture thereof
US5532894A (en) * 1994-07-11 1996-07-02 Minnesota Mining And Manufacturing Company Overvoltage protection circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
JP2946306B2 (ja) * 1995-09-12 1999-09-06 セイコーインスツルメンツ株式会社 半導体温度センサーとその製造方法
KR100482363B1 (ko) * 1997-10-14 2005-08-25 삼성전자주식회사 보호용다이오드를가지는반도체장치및그제조방법
US6696707B2 (en) * 1999-04-23 2004-02-24 Ccp. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6566223B1 (en) 2000-08-15 2003-05-20 C. P. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
US8471390B2 (en) * 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
CN101874349A (zh) * 2008-03-27 2010-10-27 艾格瑞系统有限公司 耐高压输入/输出接口电路
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591171A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS57186833A (en) * 1981-05-13 1982-11-17 Hitachi Ltd Switching element
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
JPS5821374A (ja) * 1981-07-29 1983-02-08 Toshiba Corp 半導体装置
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
IT1188309B (it) * 1986-01-24 1988-01-07 Sgs Microelettrica Spa Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
IT8622719A0 (it) 1986-12-17
US4916085A (en) 1990-04-10
EP0271942A3 (en) 1990-06-20
EP0271942A2 (en) 1988-06-22

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227