IT1229318B - Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore. - Google Patents

Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore.

Info

Publication number
IT1229318B
IT1229318B IT8920346A IT2034689A IT1229318B IT 1229318 B IT1229318 B IT 1229318B IT 8920346 A IT8920346 A IT 8920346A IT 2034689 A IT2034689 A IT 2034689A IT 1229318 B IT1229318 B IT 1229318B
Authority
IT
Italy
Prior art keywords
manifold
bipolar transistors
pilot circuit
resonant load
power device
Prior art date
Application number
IT8920346A
Other languages
English (en)
Other versions
IT8920346A0 (it
Inventor
Salvatore Raciti
Sergio Palara
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8920346A priority Critical patent/IT1229318B/it
Publication of IT8920346A0 publication Critical patent/IT8920346A0/it
Priority to EP90200933A priority patent/EP0396167B1/en
Priority to DE69004147T priority patent/DE69004147T2/de
Priority to US07/511,408 priority patent/US5113305A/en
Priority to CA002014901A priority patent/CA2014901C/en
Priority to JP2111896A priority patent/JP2684228B2/ja
Priority to KR1019900006185A priority patent/KR900019372A/ko
Application granted granted Critical
Publication of IT1229318B publication Critical patent/IT1229318B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
IT8920346A 1989-05-02 1989-05-02 Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore. IT1229318B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT8920346A IT1229318B (it) 1989-05-02 1989-05-02 Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore.
EP90200933A EP0396167B1 (en) 1989-05-02 1990-04-17 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for power device with resonant load on the collector
DE69004147T DE69004147T2 (de) 1989-05-02 1990-04-17 Schutzeinrichtung gegen den Durchbruch bipolarer Transistoren in einem integrierten Treiber-Schaltkreis für ein Leistungsbauelement mit resonanter Ladung am Kollektor.
US07/511,408 US5113305A (en) 1989-05-02 1990-04-19 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for a power device with a resonant load
CA002014901A CA2014901C (en) 1989-05-02 1990-04-19 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for power device with resonant load on the collector
JP2111896A JP2684228B2 (ja) 1989-05-02 1990-05-01 コレクタ側に共振性負荷を有する電力デバイスのための集積化駆動回路におけるバイポーラトランジスタの降伏に対する保護用デバイス
KR1019900006185A KR900019372A (ko) 1989-05-02 1990-05-01 콜렉터에 공진 부하를 갖는 전력소자를 위한 집적구동회로 내의 바이폴라 트랜지스터의 브레이크다운 방지용 보호장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8920346A IT1229318B (it) 1989-05-02 1989-05-02 Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore.

Publications (2)

Publication Number Publication Date
IT8920346A0 IT8920346A0 (it) 1989-05-02
IT1229318B true IT1229318B (it) 1991-08-08

Family

ID=11165913

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920346A IT1229318B (it) 1989-05-02 1989-05-02 Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore.

Country Status (7)

Country Link
US (1) US5113305A (it)
EP (1) EP0396167B1 (it)
JP (1) JP2684228B2 (it)
KR (1) KR900019372A (it)
CA (1) CA2014901C (it)
DE (1) DE69004147T2 (it)
IT (1) IT1229318B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636097A (en) * 1991-05-09 1997-06-03 Consorzio Per La Ricerca Sulla Microelettronica Protective circuit for semiconductor power device
IT1248382B (it) * 1991-05-09 1995-01-11 Cons Ric Microelettronica Circuito di protezione contro l'aumento della corrente di uscita per un circuito integrato comprendente un dispositivo di potenza che pilota un carico risonante collegato ad un'alimentazione
US5798668A (en) * 1995-11-28 1998-08-25 Thomson Consumer Electronics, Inc. Low-power transconductance driver amplifier
US5684427A (en) * 1996-01-19 1997-11-04 Allegro Microsystems, Inc. Bipolar driver circuit including primary and pre-driver transistors
DE10340937A1 (de) * 2003-09-05 2005-03-31 Robert Bosch Gmbh Transistorschaltung mit Spannungsbegrenzungseinrichtung und Verwendung eines Basis-Emitter-Widerstands

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852943C3 (de) * 1978-12-07 1981-09-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung mit einem verzögerungsbehafteten Halbleiterschalter
JPS57104325A (en) * 1980-12-20 1982-06-29 Fujitsu Ltd Ecl circuit
DE3125400A1 (de) * 1981-06-27 1983-01-13 Robert Bosch Gmbh, 7000 Stuttgart "schaltungsanordnung mit einem endtransistor zum ein- und ausschalten eines verbrauchers, insbesondere der primaerwicklung einer zu der zuendanlage einer brennkraftmaschine gehoerenden zuendspule"
DE3408788A1 (de) * 1984-03-10 1985-09-12 Dierk Prof. Schröder Elektronische sicherungsvorrichtung fuer halbleiterschalter zum schutz gegen ueberstrom
JPS60219768A (ja) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp 半導体装置
JPH0683042B2 (ja) * 1986-03-31 1994-10-19 株式会社東芝 出力ドライバ回路
US4825102A (en) * 1986-09-11 1989-04-25 Matsushita Electric Industrial Co., Ltd. MOS FET drive circuit providing protection against transient voltage breakdown
IT1213411B (it) * 1986-12-17 1989-12-20 Sgs Microelettronica Spa Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.
FR2630276B1 (fr) * 1988-04-14 1992-07-03 Bendix Electronics Sa Circuit de commande d'une charge inductive
NL8801103A (nl) * 1988-04-28 1989-11-16 Philips Nv Transistorschakeling met stuurstroombegrenzing.
DE3829843A1 (de) * 1988-09-02 1990-03-08 Bosch Gmbh Robert Elektronisches, monolithisch integriertes geraet

Also Published As

Publication number Publication date
EP0396167A1 (en) 1990-11-07
US5113305A (en) 1992-05-12
DE69004147T2 (de) 1994-05-26
JP2684228B2 (ja) 1997-12-03
KR900019372A (ko) 1990-12-24
DE69004147D1 (de) 1993-12-02
JPH02304960A (ja) 1990-12-18
EP0396167B1 (en) 1993-10-27
CA2014901C (en) 1998-01-06
CA2014901A1 (en) 1990-11-02
IT8920346A0 (it) 1989-05-02

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Effective date: 19970530