DE3677689D1 - Schaltungsanordnung fuer die vorspannungsversorgung von feldeffekttransistoren. - Google Patents

Schaltungsanordnung fuer die vorspannungsversorgung von feldeffekttransistoren.

Info

Publication number
DE3677689D1
DE3677689D1 DE8686306254T DE3677689T DE3677689D1 DE 3677689 D1 DE3677689 D1 DE 3677689D1 DE 8686306254 T DE8686306254 T DE 8686306254T DE 3677689 T DE3677689 T DE 3677689T DE 3677689 D1 DE3677689 D1 DE 3677689D1
Authority
DE
Germany
Prior art keywords
field effect
voltage supply
circuit arrangement
effect transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686306254T
Other languages
English (en)
Inventor
Hiroshi Asazawa
Kazuya Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3677689D1 publication Critical patent/DE3677689D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE8686306254T 1985-08-13 1986-08-13 Schaltungsanordnung fuer die vorspannungsversorgung von feldeffekttransistoren. Expired - Fee Related DE3677689D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60178943A JPH0758867B2 (ja) 1985-08-13 1985-08-13 バイアス回路

Publications (1)

Publication Number Publication Date
DE3677689D1 true DE3677689D1 (de) 1991-04-04

Family

ID=16057354

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686306254T Expired - Fee Related DE3677689D1 (de) 1985-08-13 1986-08-13 Schaltungsanordnung fuer die vorspannungsversorgung von feldeffekttransistoren.

Country Status (6)

Country Link
US (1) US4749877A (de)
EP (1) EP0218333B1 (de)
JP (1) JPH0758867B2 (de)
AU (1) AU584845B2 (de)
CA (1) CA1283177C (de)
DE (1) DE3677689D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808495A (en) * 1991-11-26 1998-09-15 Furuno Electric Company, Limited Magnetron driving circuit
DE69420981T2 (de) * 1993-01-08 2000-04-06 Sony Corp Integrierte monolithische Mikrowellenschaltung
JPH06334445A (ja) * 1993-05-19 1994-12-02 Mitsubishi Electric Corp 半導体集積回路
JP2718378B2 (ja) * 1994-09-30 1998-02-25 日本電気株式会社 半導体増幅回路
JP3839148B2 (ja) * 1997-11-18 2006-11-01 沖電気工業株式会社 電界効果トランジスタのゲートバイアス電圧印加回路と電界効果トランジスタのゲートバイアス電圧印加回路が搭載されている半導体装置
US6181118B1 (en) * 1999-06-24 2001-01-30 Analog Devices, Inc. Control circuit for controlling a semi-conductor switch for selectively outputting an output voltage at two voltage levels
US6600301B1 (en) * 2002-04-30 2003-07-29 Raytheon Company Current shutdown circuit for active bias circuit having process variation compensation
JP2005039084A (ja) * 2003-07-16 2005-02-10 Sony Corp バイアス回路および半導体装置の製造方法
JP5646360B2 (ja) * 2011-02-04 2014-12-24 株式会社東芝 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875430A (en) * 1973-07-16 1975-04-01 Intersil Inc Current source biasing circuit
GB1494491A (en) * 1974-01-16 1977-12-07 Hitachi Ltd Compensation means in combination with a pulse generator circuit utilising field effect transistors
GB1508228A (en) * 1974-11-12 1978-04-19 Sony Corp Transistor circuits
JPS5267550A (en) * 1975-12-03 1977-06-04 Hitachi Ltd Compensation circuit
DE2613937A1 (de) * 1976-04-01 1977-10-13 Licentia Gmbh Schaltungsanordnung
JPS53102344U (de) * 1977-01-21 1978-08-18
DE3017654A1 (de) * 1980-05-08 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung
JPS6019372U (ja) * 1983-07-19 1985-02-09 山口　正信 軟体動物，フジツボ，カキ類固着防止カバ−

Also Published As

Publication number Publication date
EP0218333A1 (de) 1987-04-15
CA1283177C (en) 1991-04-16
AU6111786A (en) 1987-02-19
JPS6238607A (ja) 1987-02-19
EP0218333B1 (de) 1991-02-27
US4749877A (en) 1988-06-07
AU584845B2 (en) 1989-06-01
JPH0758867B2 (ja) 1995-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee