DE69404700D1 - Referenzdiode in integriertem Bipolarschaltkreis - Google Patents

Referenzdiode in integriertem Bipolarschaltkreis

Info

Publication number
DE69404700D1
DE69404700D1 DE69404700T DE69404700T DE69404700D1 DE 69404700 D1 DE69404700 D1 DE 69404700D1 DE 69404700 T DE69404700 T DE 69404700T DE 69404700 T DE69404700 T DE 69404700T DE 69404700 D1 DE69404700 D1 DE 69404700D1
Authority
DE
Germany
Prior art keywords
reference diode
bipolar circuit
integrated bipolar
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404700T
Other languages
English (en)
Other versions
DE69404700T2 (de
Inventor
Roux Gerard Le
Menn Jacques Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69404700D1 publication Critical patent/DE69404700D1/de
Application granted granted Critical
Publication of DE69404700T2 publication Critical patent/DE69404700T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69404700T 1993-03-01 1994-02-28 Referenzdiode in integriertem Bipolarschaltkreis Expired - Fee Related DE69404700T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9302617A FR2702308B1 (fr) 1993-03-01 1993-03-01 Diode à avalanche dans un circuit intégré bipolaire.

Publications (2)

Publication Number Publication Date
DE69404700D1 true DE69404700D1 (de) 1997-09-11
DE69404700T2 DE69404700T2 (de) 1998-03-12

Family

ID=9444723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404700T Expired - Fee Related DE69404700T2 (de) 1993-03-01 1994-02-28 Referenzdiode in integriertem Bipolarschaltkreis

Country Status (5)

Country Link
US (2) US5414295A (de)
EP (1) EP0614232B1 (de)
JP (1) JPH06295987A (de)
DE (1) DE69404700T2 (de)
FR (1) FR2702308B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
US5990490A (en) * 1998-06-29 1999-11-23 Miracle Technology Co., Ltd. Optical electronic IC capable of photo detection
US6762479B2 (en) * 1998-11-06 2004-07-13 International Business Machines Corporation Microwave array transistor for low-noise and high-power applications
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
JP4251326B2 (ja) * 2004-03-30 2009-04-08 サンケン電気株式会社 半導体装置
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
BRPI0919221A2 (pt) 2008-09-15 2015-12-08 Osi Optoelectronics Inc fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP6186601B2 (ja) * 2013-01-16 2017-08-30 セイコーＮｐｃ株式会社 可変容量ダイオード
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode
JPS60171515A (ja) * 1984-02-17 1985-09-05 Fujitsu Ltd 基準電圧源
US4742021A (en) * 1985-05-05 1988-05-03 Burr-Brown Corporation Subsurface zener diode and method of making
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
US4683483A (en) * 1986-05-05 1987-07-28 Burr-Brown Corporation Subsurface zener diode and method of making
EP0314399A3 (de) * 1987-10-30 1989-08-30 Precision Monolithics Inc. Vergrabene Zenerdiode und Verfahren zu deren Herstellung
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
FR2678430B1 (fr) * 1991-06-28 1993-10-29 Sgs Thomson Microelectronics Sa Diode a avalanche dans un circuit integre bipolaire.
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.

Also Published As

Publication number Publication date
EP0614232A1 (de) 1994-09-07
EP0614232B1 (de) 1997-08-06
FR2702308B1 (fr) 1995-05-24
US5414295A (en) 1995-05-09
FR2702308A1 (fr) 1994-09-09
JPH06295987A (ja) 1994-10-21
US5468673A (en) 1995-11-21
DE69404700T2 (de) 1998-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee