DE69420327T2 - Halbleiter-Leistungsschaltung - Google Patents

Halbleiter-Leistungsschaltung

Info

Publication number
DE69420327T2
DE69420327T2 DE69420327T DE69420327T DE69420327T2 DE 69420327 T2 DE69420327 T2 DE 69420327T2 DE 69420327 T DE69420327 T DE 69420327T DE 69420327 T DE69420327 T DE 69420327T DE 69420327 T2 DE69420327 T2 DE 69420327T2
Authority
DE
Germany
Prior art keywords
power circuit
semiconductor power
semiconductor
circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69420327T
Other languages
English (en)
Other versions
DE69420327D1 (de
Inventor
Brendan Patrick Kelly
Paul Timothy Moody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9312814A external-priority patent/GB2279524A/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69420327D1 publication Critical patent/DE69420327D1/de
Application granted granted Critical
Publication of DE69420327T2 publication Critical patent/DE69420327T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
DE69420327T 1993-06-22 1994-06-20 Halbleiter-Leistungsschaltung Expired - Lifetime DE69420327T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9312814A GB2279524A (en) 1993-06-22 1993-06-22 Gate control circuit for power MOSFET
GB9407443A GB9407443D0 (en) 1993-06-22 1994-04-14 A power semiconductor circuit

Publications (2)

Publication Number Publication Date
DE69420327D1 DE69420327D1 (de) 1999-10-07
DE69420327T2 true DE69420327T2 (de) 2000-03-30

Family

ID=26303102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69420327T Expired - Lifetime DE69420327T2 (de) 1993-06-22 1994-06-20 Halbleiter-Leistungsschaltung

Country Status (4)

Country Link
US (1) US5506539A (de)
EP (1) EP0631390B1 (de)
JP (1) JP3580857B2 (de)
DE (1) DE69420327T2 (de)

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US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
DE19509572B4 (de) * 1995-03-16 2008-06-12 Linde Material Handling Gmbh Treiberschaltung für MOSFET-Kompaktmodule
EP0743752B1 (de) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Laden eines Bootstrap-Kondensators mittels eines lateralen DMOS-Transistors
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
DE19619399A1 (de) * 1996-05-14 1997-11-20 Telefunken Microelectron Schaltvorrichtung mit einem Leistungs-FET und einer induktiven Last
JPH1051285A (ja) * 1996-05-28 1998-02-20 Mitsubishi Electric Corp 電圧制御型トランジスタの駆動回路
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
EP0822661A3 (de) * 1996-08-02 1999-11-24 Siemens Aktiengesellschaft Ansteuerschaltung für ein Feldeffekt gesteuertes Leistungs-Halbleiterbauelement
EP0887932A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Steuerung der Körperspannung eines Hochspannungs-LDMOS-Transistors
DE19739999C2 (de) * 1997-09-11 2002-03-07 Infineon Technologies Ag Ansteuerschaltung für ein mittels Feldeffekt gesteuertes Leistungs-Halbleiterbauelement
DE19742930C1 (de) * 1997-09-29 1998-11-19 Siemens Ag Leistungsschalter mit Überlastschutz
GB9721908D0 (en) * 1997-10-17 1997-12-17 Philips Electronics Nv Voltage regulator circuits and semiconductor circuit devices
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6097237A (en) * 1998-01-29 2000-08-01 Sun Microsystems, Inc. Overshoot/undershoot protection scheme for low voltage output buffer
US6043702A (en) * 1998-01-29 2000-03-28 Sun Microsystems, Inc. Dynamic biasing for overshoot and undershoot protection circuits
US6091265A (en) * 1998-02-20 2000-07-18 Sun Microsystems, Inc. Low voltage CMOS input buffer with undershoot/overshoot protection
EP1135806A1 (de) * 1998-12-03 2001-09-26 Infineon Technologies AG Steuerbares halbleiterbauelement mit einem gatevorwiderstand
US6404267B1 (en) * 1999-07-21 2002-06-11 Cooper Industries High side MOSFET drive
GB9922763D0 (en) 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Semiconductor devices
JP2001274402A (ja) * 2000-03-24 2001-10-05 Toshiba Corp パワー半導体装置
JP4174167B2 (ja) * 2000-04-04 2008-10-29 株式会社アドバンテスト 半導体集積回路の故障解析方法および故障解析装置
JP3521842B2 (ja) * 2000-04-13 2004-04-26 株式会社デンソー モータ駆動装置
EP2030322B1 (de) * 2006-05-29 2016-09-14 Koninklijke Philips N.V. Schaltkreisanordnung
JP4803041B2 (ja) * 2007-01-06 2011-10-26 船井電機株式会社 ディスク装置
US20090140791A1 (en) * 2007-11-29 2009-06-04 Young Paul D Switching Element Control
DE102011055122A1 (de) 2010-12-16 2012-06-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Widerstandsschaltung, Schaltungsanordnung und Treiber
CN103095109B (zh) * 2011-11-04 2015-04-08 登丰微电子股份有限公司 同步控制电路
JP5773907B2 (ja) * 2012-02-17 2015-09-02 三菱電機株式会社 半導体装置およびその冷却システム
CN104247261B (zh) * 2012-04-12 2016-08-24 皇家飞利浦有限公司 用于具有单独可调过渡边沿的线对的数字通信接口电路
KR101730198B1 (ko) * 2012-12-26 2017-04-25 삼성전기주식회사 Ｓｐｄｔ 스위치 회로
US9634664B2 (en) 2013-04-05 2017-04-25 Applied Wireless Identifications Group, Inc. Over-current and/or over-voltage protection circuit
US9209805B2 (en) * 2013-04-05 2015-12-08 Applied Wireless Identifications Group, Inc. Over-current and/or over-voltage protection circuit
US20150137246A1 (en) * 2013-11-20 2015-05-21 Peregrine Semiconductor Corporation Floating Body Contact Circuit Method for Improving ESD Performance and Switching Speed
JP2015154591A (ja) * 2014-02-14 2015-08-24 ローム株式会社 ゲート駆動回路および電源装置
WO2016201402A1 (en) * 2015-06-11 2016-12-15 KSR IP Holdings, LLC Dv/dt control in mosfet gate drive
US10158356B2 (en) 2016-09-06 2018-12-18 Infineon Technologies Austria Ag Switch device
KR101841159B1 (ko) * 2016-12-22 2018-03-22 주식회사 윌링스 스위칭 게이트 드라이브
US10602590B1 (en) 2018-10-23 2020-03-24 Abl Ip Holding Llc Isolation of digital signals in a lighting control transceiver
CN111130328B (zh) * 2018-10-31 2021-12-28 瑞昱半导体股份有限公司 介面电路以及控制介面电路内的开关电路的方法
CN110729880B (zh) * 2019-11-18 2021-06-11 阳光电源股份有限公司 电力变换装置的驱动电路及其应用装置
JP2022174830A (ja) * 2021-05-12 2022-11-25 キヤノン株式会社 電源装置及び画像形成装置

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JPS5942492B2 (ja) * 1976-11-18 1984-10-15 ソニー株式会社 プツシユプルパルス増巾回路
DE3430961A1 (de) * 1984-08-20 1986-02-27 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter
JPS62241429A (ja) * 1986-04-14 1987-10-22 Hitachi Ltd 半導体集積回路装置
JPH0693613B2 (ja) * 1987-01-16 1994-11-16 三菱電機株式会社 Ｍｉｓトランジスタ回路
JPS6482708A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Mos-fet driving circuit
FR2630276B1 (fr) * 1988-04-14 1992-07-03 Bendix Electronics Sa Circuit de commande d'une charge inductive
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
DE3936544A1 (de) * 1988-12-21 1990-06-28 Siemens Ag Schaltungsanordnung zum schutz eines leistungs-mosfet
US5231311A (en) * 1989-02-28 1993-07-27 Vlsi Technology, Inc. Digital output buffer and method with slew rate control and reduced crowbar current
JPH04105420A (ja) * 1990-08-27 1992-04-07 Mitsubishi Electric Corp 半導体集積回路
EP0523800B1 (de) * 1991-07-19 1998-04-08 Philips Electronics Uk Limited Überspannungsgeschützter Halbleiterschalter
US5278422A (en) * 1991-09-02 1994-01-11 Matsushita Electric Works, Ltd. Normally open solid state relay with minimized response time of relay action upon being turned off
US5173848A (en) * 1991-09-06 1992-12-22 Roof Richard W Motor controller with bi-modal turnoff circuits
US5305191A (en) * 1992-04-20 1994-04-19 At&T Bell Laboratories Drive circuit for zero-voltage switching power converter with controlled power switch turn-on
US5347169A (en) * 1992-09-08 1994-09-13 Preslar Donald R Inductive load dump circuit
US5497285A (en) * 1993-09-14 1996-03-05 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection

Also Published As

Publication number Publication date
JP3580857B2 (ja) 2004-10-27
EP0631390A3 (de) 1995-12-13
DE69420327D1 (de) 1999-10-07
EP0631390B1 (de) 1999-09-01
JPH0795033A (ja) 1995-04-07
EP0631390A2 (de) 1994-12-28
US5506539A (en) 1996-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL