DE69318658T2 - Leistungs-Halbeiterbauelement - Google Patents

Leistungs-Halbeiterbauelement

Info

Publication number
DE69318658T2
DE69318658T2 DE1993618658 DE69318658T DE69318658T2 DE 69318658 T2 DE69318658 T2 DE 69318658T2 DE 1993618658 DE1993618658 DE 1993618658 DE 69318658 T DE69318658 T DE 69318658T DE 69318658 T2 DE69318658 T2 DE 69318658T2
Authority
DE
Grant status
Grant
Patent type
Prior art keywords
power semiconductor
semiconductor component
component
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1993618658
Other languages
English (en)
Other versions
DE69318658D1 (de )
Inventor
Shin Soyano
Susumu Toba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/144Stacked arrangements of planar printed circuit boards
DE1993618658 1992-07-24 1993-07-12 Leistungs-Halbeiterbauelement Expired - Lifetime DE69318658T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19733192A JP2956363B2 (ja) 1992-07-24 1992-07-24 パワー半導体装置

Publications (1)

Publication Number Publication Date
DE69318658T2 true DE69318658T2 (de) 1998-09-10

Family

ID=16372692

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1993618658 Expired - Lifetime DE69318658T2 (de) 1992-07-24 1993-07-12 Leistungs-Halbeiterbauelement
DE1993618658 Expired - Lifetime DE69318658D1 (de) 1992-07-24 1993-07-12 Leistungs-Halbeiterbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1993618658 Expired - Lifetime DE69318658D1 (de) 1992-07-24 1993-07-12 Leistungs-Halbeiterbauelement

Country Status (4)

Country Link
US (1) US5519252A (de)
EP (1) EP0591631B1 (de)
JP (1) JP2956363B2 (de)
DE (2) DE69318658T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10120402B4 (de) * 2001-04-25 2005-04-14 Danfoss Silicon Power Gmbh Leistungshalbleitermodul-Gehäuse
DE102004046807A1 (de) * 2004-09-27 2006-04-06 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Kunststoffkomponente in Form eines Gehäuseteils für ein Leistungshalbleitermodul und Verfahren zum Herstellen einer solchen Kunststoffkomponente
DE10024377B4 (de) * 2000-05-17 2006-08-17 Infineon Technologies Ag Gehäuseeinrichtung und darin zu verwendendes Kontaktelement

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JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
DE4426465A1 (de) * 1994-07-26 1996-02-01 Siemens Ag Verbindungsteil zwischen elektrischen Anschlüssen im Inneren eines Gehäuses und aus dem Gehäuse herausragenden Anschlüssen
JP3222328B2 (ja) * 1994-08-31 2001-10-29 株式会社日立メディアエレクトロニクス 電源装置
EP0706221B8 (de) * 1994-10-07 2008-09-03 Hitachi, Ltd. Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen
JPH08162569A (ja) * 1994-12-08 1996-06-21 Fuji Electric Co Ltd 半導体装置
JP3201187B2 (ja) * 1994-12-08 2001-08-20 富士電機株式会社 半導体装置
DE19515622C2 (de) * 1995-04-28 2000-06-08 Telefunken Microelectron Steuermodul von Kraftfahrzeugen
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
JP3396566B2 (ja) * 1995-10-25 2003-04-14 三菱電機株式会社 半導体装置
JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
JP3168901B2 (ja) * 1996-02-22 2001-05-21 株式会社日立製作所 パワー半導体モジュール
JP2861956B2 (ja) * 1996-07-24 1999-02-24 日本電気株式会社 高周波デバイスパッケージ及びその製造方法
US6281579B1 (en) * 1997-02-14 2001-08-28 International Rectifier Corporation Insert-molded leadframe to optimize interface between powertrain and driver board
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
DE29718449U1 (de) * 1997-10-17 1999-02-11 Bosch Gmbh Robert Bauelementefixierung bei elektrischem Steuergerät
US6486548B1 (en) * 1997-10-20 2002-11-26 Hitachi, Ltd. Semiconductor module and power converting apparatus using the module
US6166464A (en) * 1998-08-24 2000-12-26 International Rectifier Corp. Power module
JP4234259B2 (ja) * 1999-05-14 2009-03-04 富士通テン株式会社 電子機器の組合せ構造
DE19924993C2 (de) * 1999-05-31 2002-10-10 Tyco Electronics Logistics Ag Intelligentes Leistungsmodul in Sandwich-Bauweise
ES2169687B2 (es) 1999-09-30 2004-10-16 Denso Corporation Unidad electronica de control con elemento de activacion y elemento de tratamiento de control.
KR20010058771A (ko) * 1999-12-30 2001-07-06 구자홍 전기/전자 제품용 원 시스템 모듈
US6442027B2 (en) 2000-02-23 2002-08-27 Denso Corporation Electronic control unit having connector positioned between two circuit substrates
US6466447B2 (en) 2000-02-24 2002-10-15 Denso Corporation Electronic control unit having flexible wires connecting connector to circuit board
JP4845250B2 (ja) * 2000-07-25 2011-12-28 ソニー株式会社 固体撮像素子収納パッケージ及び固体撮像装置
JP4218193B2 (ja) 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
JP4151209B2 (ja) * 2000-08-29 2008-09-17 三菱電機株式会社 電力用半導体装置
JP3923258B2 (ja) * 2001-01-17 2007-05-30 松下電器産業株式会社 電力制御系電子回路装置及びその製造方法
EP1376695A4 (de) * 2001-04-02 2009-04-29 Mitsubishi Electric Corp Leistungs-halbleiterbauelement
US7061080B2 (en) * 2001-06-11 2006-06-13 Fairchild Korea Semiconductor Ltd. Power module package having improved heat dissipating capability
US6774465B2 (en) * 2001-10-05 2004-08-10 Fairchild Korea Semiconductor, Ltd. Semiconductor power package module
JP2004088989A (ja) * 2002-07-03 2004-03-18 Auto Network Gijutsu Kenkyusho:Kk 電力回路部の防水方法
US7301755B2 (en) * 2003-12-17 2007-11-27 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
JP4589009B2 (ja) * 2004-01-09 2010-12-01 三菱電機株式会社 電力用半導体装置
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
JP4034770B2 (ja) * 2004-09-09 2008-01-16 本田技研工業株式会社 パワードライブユニット
US20060286845A1 (en) * 2005-06-20 2006-12-21 Hinze Lee R Sealed fastenerless multi-board electronic module and method of manufacture
JP4867280B2 (ja) * 2005-10-18 2012-02-01 株式会社ジェイテクト コーティング剤塗布方法
KR101203466B1 (ko) * 2006-04-20 2012-11-21 페어차일드코리아반도체 주식회사 전력 시스템 모듈 및 그 제조 방법
KR101255334B1 (ko) * 2006-05-08 2013-04-16 페어차일드코리아반도체 주식회사 저 열저항 파워 모듈 및 그 제조방법
CN100426523C (zh) 2006-10-20 2008-10-15 株洲南车时代电气股份有限公司 直列插入式半导体器件
KR101194041B1 (ko) * 2006-12-07 2012-10-24 페어차일드코리아반도체 주식회사 고전력 반도체 패키지
KR101391924B1 (ko) * 2007-01-05 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지
KR101391925B1 (ko) * 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
JP5252819B2 (ja) * 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
DE102007032594B4 (de) * 2007-07-12 2009-04-09 Continental Automotive Gmbh Steuervorrichtung und Verfahren zur Herstellung einer Steuervorrichtung
JP2009081325A (ja) * 2007-09-27 2009-04-16 Sanyo Electric Co Ltd 回路装置
JP4969388B2 (ja) * 2007-09-27 2012-07-04 オンセミコンダクター・トレーディング・リミテッド 回路モジュール
US7751194B2 (en) * 2007-09-27 2010-07-06 Sanyo Electric Co., Ltd. Circuit device, circuit module, and outdoor unit
JP4934559B2 (ja) 2007-09-27 2012-05-16 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
US8102670B2 (en) * 2007-09-27 2012-01-24 Sanyo Semiconductor Co., Ltd. Circuit device and method of manufacturing the same
US20090091889A1 (en) * 2007-10-09 2009-04-09 Oman Todd P Power electronic module having improved heat dissipation capability
JP5251066B2 (ja) * 2007-10-15 2013-07-31 富士電機株式会社 半導体装置
JP5292779B2 (ja) * 2007-11-26 2013-09-18 富士電機株式会社 半導体装置
JP5176507B2 (ja) 2007-12-04 2013-04-03 富士電機株式会社 半導体装置
JP4998747B2 (ja) 2008-06-27 2012-08-15 国産電機株式会社 車載用電力制御装置
JP5586866B2 (ja) * 2008-09-29 2014-09-10 株式会社日立産機システム 電力変換装置
JP4634498B2 (ja) * 2008-11-28 2011-02-23 三菱電機株式会社 電力用半導体モジュール
US8059411B2 (en) * 2009-07-29 2011-11-15 GM Global Technology Operations LLC Vehicular electronics assembly
DE202011005085U1 (de) * 2011-04-09 2014-06-06 Kiekert Ag Kraftfahrzeugtürschlossgehäuse
US8466541B2 (en) * 2011-10-31 2013-06-18 Infineon Technologies Ag Low inductance power module
DE102011085629A1 (de) * 2011-11-02 2013-05-02 Robert Bosch Gmbh Elektronikmodul zum Betrieb im Getriebe
KR101434039B1 (ko) * 2012-10-30 2014-08-25 삼성전기주식회사 전력 반도체 모듈 및 전력 반도체 제조 방법
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
US9848518B2 (en) * 2013-01-17 2017-12-19 Delta Electronics, Inc. Integrated power module packaging structure
JP6115172B2 (ja) * 2013-02-15 2017-04-19 富士電機株式会社 半導体装置
JP6071662B2 (ja) * 2013-03-11 2017-02-01 京セラ株式会社 パワー半導体モジュール
CN105122446A (zh) * 2013-09-30 2015-12-02 富士电机株式会社 半导体装置、半导体装置的组装方法、半导体装置用部件以及单位模块
US20150130071A1 (en) * 2013-11-12 2015-05-14 Infineon Technologies Ag Semiconductor Package Comprising a Transistor Chip Module and a Driver Chip Module and a Method for Fabricating the Same
DE102013226236A1 (de) * 2013-12-17 2015-06-18 Robert Bosch Gmbh Elektrische Baugruppe
JP6230946B2 (ja) 2014-04-03 2017-11-15 株式会社日立製作所 電力変換装置、およびそれを搭載した鉄道車両
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10024377B4 (de) * 2000-05-17 2006-08-17 Infineon Technologies Ag Gehäuseeinrichtung und darin zu verwendendes Kontaktelement
DE10120402B4 (de) * 2001-04-25 2005-04-14 Danfoss Silicon Power Gmbh Leistungshalbleitermodul-Gehäuse
DE102004046807A1 (de) * 2004-09-27 2006-04-06 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Kunststoffkomponente in Form eines Gehäuseteils für ein Leistungshalbleitermodul und Verfahren zum Herstellen einer solchen Kunststoffkomponente
DE102004046807B4 (de) * 2004-09-27 2010-08-12 Infineon Technologies Ag Verfahren zur Herstellung eines Kunststoff-Gehäuseteils für ein Leistungshalbleitermodul

Also Published As

Publication number Publication date Type
EP0591631B1 (de) 1998-05-20 grant
US5519252A (en) 1996-05-21 grant
DE69318658D1 (de) 1998-06-25 grant
JPH0645518A (ja) 1994-02-18 application
JP2956363B2 (ja) 1999-10-04 grant
EP0591631A1 (de) 1994-04-13 application

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