GB2279524A - Gate control circuit for power MOSFET - Google Patents
Gate control circuit for power MOSFET Download PDFInfo
- Publication number
- GB2279524A GB2279524A GB9312814A GB9312814A GB2279524A GB 2279524 A GB2279524 A GB 2279524A GB 9312814 A GB9312814 A GB 9312814A GB 9312814 A GB9312814 A GB 9312814A GB 2279524 A GB2279524 A GB 2279524A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- semiconductor device
- power semiconductor
- gate
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
Landscapes
- Power Conversion In General (AREA)
Abstract
Control transistor Q1 improves charge removal from the gate of the power MOSFET 2 when node G is pulled low. A second control transistor Q2 is turned off by Q3 when gate charge dumping transistor Q4 is activated by fault detector 10. This permits Q4 to shutdown the power MOSFET 2 more rapidly. A Zener clamp 9 may be provided for inductive loads. <IMAGE>
Description
DESCRIPTION
A POWER SEMICONDUCTOR CIRCUIT
This invention relates to a power semiconductor circuit comprising an insulated gate field effect power semiconductor device and a gate control circuit for controlling the application of voltages to the insulated gate electrode of the power semiconductor device.
US-A-4928053 describes a power semiconductor device circuit in which the power semiconductor device is an n-channel power MOSFET intended to be used as a high-side switch for an inductive load.
As will be understood by those skilled in the art, a 'high-side switch' in the case of an n-channel device is a switch which is coupled between the load and the more positive of the two voltage supply lines. In the circuit described in US-A-4928053, a voltage clamping circuit in the form of a zener diode is coupled between the positive voltage supply terminal to which one main electrode of the power semiconductor device is coupled and the gate electrode of the power semiconductor device. The main current path, that is the current path between its main electrodes, of an n-channel MOS transistor is coupled between the gate and the other main electrode of the power semiconductor device. The gate electrode of the n-channel MOST is coupled together with the gate electrode of a p-channel MOST to the other supply line which is, as shown, at ground.The main current path of the p-channel MOS transistor is coupled between the gate electrode of the power MOSFET and a gate drive circuit. In operation of the circuit described in
US-A-4928053 when an overvoltage occurs due to the switching of the inductive load, the zener diode breaks down and the n-channel MOS transistor provides a conduction path, bypassing the power semiconductor device, for dissipation of the energy in the inductive load. At the same time, the p-channel MOS is switched off so isolating the power MOSFET from the gate drive circuit.
It is an aim of the present invention to provide a power semiconductor device circuit having a gate control circuit to facilitate switching on or off of the power semiconductor device under given conditions.
According to the present invention, there is provided a power semiconductor device circuit comprising an insulated gate field effect power semiconductor device having first and second main electrodes and a gate electrode and a gate control circuit providing a conductive path between the gate electrode and a gate voltage supply terminal, the gate control circuit comprising a resistance coupled between the gate electrode and the gate voltage supply terminal and a transistor having first and second main electrodes and a control electrode with the first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes of the transistor is coupled in parallel with the resistance and means for applying a control signal to the control electrode of the transistor to switch the transistor between a conducting and a non-conducting state to alter the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal.
Thus, in a circuit in accordance with the invention, the overall resistance of the conductive path between the gate voltage supply terminal and the gate electrode of the power semiconductor device can be modified or altered by controlling the conduction of a transistor connected in parallel with the resistance. This should enable the switching speed of the power semiconductor device to benefit from any ac signal type low impedance gate drive circuit coupled to the gate voltage supply terminal during normal operation of the power semiconductor device but allow the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal to be adjusted under abnormal conditions of the power semiconductor device to reduce the problems any such low impedance drive might otherwise cause.
A further resistance may be coupled in series with the transistor to enable the switching speed of the power semiconductor device to be adjusted.
In a first example, the gate control circuit is provided to facilitate turn off of the power semiconductor device when the gate voltage is removed from the gate voltage supply terminal, the transistor comprises an insulated gate field effect transistor and the control signal applying means comprises a coupling between the control electrode of the transistor and the gate electrode of the power semiconductor device for causing the transistor to be rendered conducting when the gate voltage is removed from the gate voltage supply terminal thereby reducing the overall resistance between the gate electrode and the gate voltage supply terminal.
The gate control circuit thus enables the desired relatively high resistance to be provided in the conductive path between the gate voltage supply terminal and the gate electrode of the power semiconductor device during normal turn on of the device and enables the resistance of the conductive path to be reduced automatically when the gate voltage is removed in order to switch off the power semiconductor device so reducing the time taken for the power semiconductor device to be switched off.
In a second example, a fault detection circuit is provided for detecting an abnormal condition of the power semiconductor device, the fault detection circuit having a control output for providing an output signal for switching off the power semiconductor device when an abnormal condition is detected, and the means for applying the control signal to the transistor comprises an additional resistance coupled in series with the main current path between first and second main electrodes of a further transistor to a voltage supply, the first main electrode of the further transistor being coupled to the additional resistance and the control electrode of the transistor so that the transistor is normally conducting, the further transistor having a control electrode coupled to the output of the fault detection circuit for causing, when the fault detection circuit provides an output signal indicating the existence of an abnormal condition, the further transistor to be rendered conducting thereby causing the transistor to become non-conducting, so increasing the overall resistance of the conductive path between the gate voltage supply terminal.
In this case, the gate control circuit acts to increase the resistance of the conductive path to the gate voltage supply terminal when the fault detection circuit detects an abnormal condition of the power semiconductor device due for example to the switching of an inductive load. This should facilitate turn off of the power semiconductor device by the fault detection circuit.
In a third example, a fault detection circuit is provided for detecting an abnormal condition of the power semiconductor device, the fault detection circuit having a control output for providing an output signal for switching off the power semiconductor device when an abnormal condition is detected and the gate control circuit additionally comprises an additional transistor having first and second main electrodes and a control electrode with the first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes of the additional transistor is coupled in parallel with the resistance and means for applying a control signal to the additional transistor comprising another resistance coupled in series with the main current path between first and second main electrodes of a further transistor to a voltage supply, the first main electrode of the further transistor being coupled to the said other resistance and the control electrode of the additional transistor so that the additional transistor is normally conducting, the further transistor having a control electrode coupled to the output of the fault detection circuit for causing, when the fault detection circuit provides an output signal indicating the existence of an abnormal condition the further transistor to be rendered conducting thereby causing the additional transistor to become non-conducting, so increasing the overall resistance of the conductive path between the gate voltage supply terminal. Such a circuit provides the functions of the first and second examples discussed above.
In the second and third examples, the fault detection circuit may have its control output coupled to the control electrode of a fault detection transistor which has one of its first and second main electrodes coupled to the gate electrode of the power semiconductor device and the other to a voltage supply so that when the fault detection transistor is rendered conducting by the output signal from the fault detection circuit the power semiconductor device is switched off.
Another resistance may be coupled in series with the transistor.
A voltage clamping circuit may be coupled between one of the first and second main electrodes and the gate electrode of the power semiconductor device for causing the power semiconductor device to be switched from a non-conducting to a conducting state when the voltage at the one main electrode exceeds a predetermined limit.
Embodiments of the invention will now be described with reference to the accompanying drawings, in which:
Figure 1 is a circuit diagram of a first embodiment of a power semiconductor device circuit in accordance with the invention;
Figure 2 is a circuit diagram for a second embodiment of a power semiconductor device circuit in accordance with the invention;
Figure 3 is a circuit diagram for a third embodiment of a power semiconductor device circuit in accordance with the invention;
Figure 4 is a circuit diagram for a fourth embodiment of a power semiconductor device circuit in accordance with the invention.
It should of course be understood that the reference numerals are used throughout the drawings to refer to like parts.
Referring now to the drawings, there are illustrated various examples of power semiconductor device circuits la,lb,lc,ld each comprising an insulated gate field effect power semiconductor device 2 having first and second main electrodes 3 and 4 and a gate electrode 5 and a gate control circuit 6a,6b,6c,6d providing a conductive path between the gate electrode 5 and a gate voltage supply terminal G, the gate control circuit 6 comprising a resistance R3 coupled between the gate electrode 5 and the gate voltage supply terminal G and a transistor Ql,Q2 having first and second main electrodes s and d and a control electrode g with the first and second main electrodes s and d coupled to the gate voltage supply terminal G and the gate electrode 5, respectively, so that the main current path between the first and second main electrodes s and d of the transistor Q1,Q2 is coupled in parallel with the resistance R2 and means for applying a control signal to the control electrode g of the transistor Ql,Q2 to switch the transistor Ql,Q2 between a conducting and a non-conducting state to alter the overall resistance RTOT of the conductive path between the gate electrode 5 and the gate voltage supply terminal G.
Thus, in a circuit in accordance with the invention, the overall resistance RTOT of the conductive path between the gate voltage supply terminal G and the gate electrode 5 of the power semiconductor device 2 can be modified or altered by controlling the conduction of a transistor Ql,Q2 connected in parallel with the resistor R3. This should enable the switching speed of the power semiconductor device to benefit from any ac signal type low impedance gate drive circuit coupled to the gate voltage supply terminal during normal operation of the power semiconductor device but allow the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal to be adjusted under abnormal conditions of the power semiconductor device to reduce the problems any such low impedance drive might otherwise cause.
Referring now to the example illustrated in Figure 1, the power semiconductor device circuit la has first and second power supply lines 7 and 8. In this example, the power semiconductor device 2 is an n-channel enhancement mode power MOSFET forming a low-side switch for a load L. The diode shown in the power MOSFET 2 symbol represents the diode formed between the drain and body (channel-defining region) of a DMOS type vertical MOSFET. The load
L may be an inductive load such as may occur in an automobile, for example an electric motor or a coil such as an ignition coil. The second power supply line 8 is thus at a positive voltage compared to the first power supply line 7 which will generally be at ground (earth) potential.
The gate electrode 5 of the power MOSFET 2 is coupled to the gate terminal G by, in this example, a first resistor R1, the gate control circuit 6a and a second resistor R2.
Any suitable form of gate drive circuit (not shown) may be provided for supplying a gate voltage to the gate terminal G.
The power semiconductor device circuit 2 may include dV temperature sensors, clamping circuits and dt limiting circuits of a suitable nature which may be integrated with the power semiconductor device 2.
The gate control circuit 6a shown in Figure 1 comprises a third resistor R3 provided between and in series with the first and second resistors R1 and R2 and an n-channel enhancement mode insulated gate field transistor (IGFET) Ql having its main current path (i.e. that between source and drain) coupled across the resistance R3 with the source electrode s of the IGFET Ql coupled to the junction Jl between the second and third resistors R2 and R3 by a fourth resistor R4 and the drain d of the IGFET Qi coupled to the junction J2 between the first and third resistors Rl and R3.
The gate electrode g of the IGFET Q1 is coupled to its drain electrode d.
Figure 1 shows the back gate electrode bg of the IGFET Q1 as uncoupled. However in practice the back gate electrode bg will either be coupled to the source electrode s in conventional manner or to the first supply line 7.
In operation of the power semiconductor device circuit la, the power semiconductor device 2, in normal operation, is switched on by the application of an appropriate positive voltage to the gate voltage supply terminal G by the gate drive circuitry (not shown).
During this phase the IGFET Ql remains non-conducting or off and the total resistance of the conductive path between the gate voltage supply terminal G and the gate electrode 5 is the sum of the resistances Rl,R2 and R3.
In order to turn off the power semiconductor device 2, the gate drive circuitry removes the gate voltage. At this stage, the voltage at the drain d (and thus the gate g) of the IGFET Q1 becomes higher than the voltage at its source and the IGFET Ql becomes conducting thus connecting the resistor R4 and the small resistance of the IGFET Ql in parallel with the third resistor R3 so reducing the overall resistance RTOT of the conductive path between the gate voltage supply terminal G and the gate electrode 5 of the power MOSFET 2.
The gate control circuit 6a thus enables the desired relatively high resistance to be provided in the conductive path between the gate voltage supply terminal G and the gate electrode 5 of the power semiconductor device 2 during normal turn on of the power semiconductor device 2 and enables the resistance of the conductive path to be reduced automatically when the gate voltage is removed in order to switch off the power semiconductor device so reducing the time taken for the power device 2 to be switched off.
Figure 2 illustrates another embodiment of a power semiconductor device circuit ib in accordance with the invention.
In the example illustrated in Figure 2, a voltage clamping circuit 9 is coupled between the second main (the drain in the example shown) electrode 4 and the gate electrode 5 of the power semiconductor device 2 so that, in the event of an overvoltage due, for example, to the switching of an inductive load L, the voltage clamping circuit 9 acts to raise the gate voltage of the power
MOSFET 2 to turn the power MOSFET 2 back on to enable the excessive energy in the inductive load L to be dissipated by the conduction of the power MOSFET 2.
The voltage clamping circuit 9 may be of any suitable type.
For example the voltage clamping circuit 9 may consist simply of a chain of zener diodes which breakdown when the voltage at the second main electrode 4 exceeds the predetermined value or a circuit similar to that described in US-A-4928053, EP-A-372820 or
EP-A-523800 could be used.
The gate control circuit 6b comprises an n-channel enhancement mode IGFET Q2 having its main current path connected in series with a resistor R5 across the resistor R3 so that the resistor R5 is coupled to the junction Jl and the drain electrode of the transistor Q2 is coupled to the junction J2. The insulated gate electrode of the transistor Q2 is coupled via a resistor R6 to a junction J3 between the junction Jl and the resistor R2 and via the main current path of an n-channel enhancement mode IGFET Q3 to the supply line 7. The gate electrode of the transistor Q3 is coupled to a control input signal terminal C.
A fault detection circuit 10 is coupled to the gate terminal G via the resistor R2 and to the first power supply line. The fault detection circuit 10 has a control output lOa for supplying a control output signal for switching off the power semiconductor device 2 when an abnormal condition is detected.
The fault detection circuit 10 may be any circuit suitable for indicating an abnormal condition which requires that the power semiconductor device 2 be switched off. Thus, for example, the fault detection circuit 10 may be designed to detect when the temperature of the power semiconductor device 2 exceeds a predetermined desirable maximum temperature. In such a case any suitable overtemperature detection circuit may be used, for example that described in our copending European Patent Application
Publication No. 523799. As another alternative or additional fault detection circuit, a circuit such as described in our copending
European Patent Application Publication No. 479362 may be used to detect when the temperature difference across a semiconductor body incorporating the power semiconductor device exceeds a predetermined limit.
The control output 10a of the fault detection circuit 10 is coupled to the control gate of an n-channel enhancement mode IGFET or transistor Q4 having its drain electrode coupled via resistor R1 to the gate electrode of the power semiconductor device 2 and directly to the junction J2 and its source electrode coupled to the first power supply line 7.
In this example, the control output 10a of the fault detection circuit 10 is also coupled to the control electrode of the transistor Q3 at the point C.
Figure 3 illustrates a modified version of a circuit lc in accordance with the invention 2 which differs from that shown in
Figure 2 simply by the fact that the resistor R6 is coupled to a separate reference voltage Vc rather than the junction J3. This allows the voltage Vc to be closer to the gate voltage than the voltage at junction J3 so enabling a higher voltage to be applied to the gate of transistor Q2.
In operation of the circuit 1b or lc, the power semiconductor device 2 when normally off is switched on by the application of an appropriate gate voltage to the gate terminal G. During the normal turn-on process, the transistor Q3 is not conducting and so the gate of transistor Q2 high and the transistor Q2 is conducting coupling the resistor R5 and the resistance of the transistor Q2 in series with the resistor R3. The situation will be similar during turn off of the power semiconductor device 2 by removal of the gate voltage.Thus, under normal operating conditions, the total resistance from the gate terminal G to the gate electrode 5 is
R1 + R2 + Rx where
1 1 1
Rx R3 R5
If the fault detection circuit 10 detects an abnormal condition, for example an overtemperature, of the power semiconductor device 2, a control output signal is provided on the output 10a to turn on the transistor Q4 so coupling the gate electrode 5 of the power semiconductor device 2 to the supply line 7 and so turning off the power semiconductor device 2. At the same time the control output signal is provided via the junction C to the control electrode of the transistor Q3 rendering the transistor
Q3 conducting which lowers the gate voltage of the transistor Q2 which becomes non-conducting.The resistor R5 and transistor Q2 thus no longer provide a conductive path in parallel with the resistor R3 and accordingly the overall resistance of the conductive path from the gate terminal G to the gate electrode 5 is increased to R1 + R2 + R3. Thus, the resistance of the path from the junction J2 to the gate terminal G is increased so facilitating the pulling down by the transistor Q4 of the power semiconductor device 2 gate electrode and increasing the resistance of the conductive path to the gate drive circuit (not shown) coupled to the gate terminal G to make it more difficult for the gate drive circuit to try and maintain the power semiconductor device 2 in a conducting state.Thus, this circuit assists in inhibiting the gate drive circuit from acting in opposition to the fault detection circuit 10 which is aiming to switch the power semiconductor device 2 off.
Consider now the situation where the power semiconductor device 2 is being used to switch, for example, an inductive load such as a motor or coil. When the power semiconductor device 2 is turned off by removal of the gate voltage, the inductive load
Lcauses a rapid rise in the voltage at the second main electrode 4 which, if the predetermined voltage is reached, causes the voltage clamping circuit 9 to conduct in order to raise the gate voltage of the power semiconductor device 2 to render it conducting so as to dissipate the energy in the inductive load L and thus avoid any destructive breakdown of the power semiconductor device 2.
Although not shown in Figure 9, a control circuit may be provided to supply an auxiliary control signal to the junction C when the voltage clamping circuit 9 is rendered conducting to raise the voltage of the gate of the transistor Q3 so rendering the transistor Q3 conducting to lower the gate voltage of the transistor Q2 which becomes non-conducting. The resistor R5 and transistor Q2 in this case then no longer provide a conductive path in parallel with the resistor R3 and accordingly the overall resistance of the conductive path from the gate terminal G to the gate electrode 5 is increased to R1 + R2 + R3.In particular, the resistance of the path from the voltage clamping circuit 9 to the gate terminal G is increased so that the current through the voltage clamping circuit 9 cannot be dissipated by the gate drive circuit (not shown) but is used directly to raise the gate voltage of the power semiconductor device 2 so increasing the speed at which the voltage clamping circuit 9 turns on the power semiconductor device 2.
Figure 4 illustrates a further example of a circuit 1d in accordance with the invention. In this example, the gate control circuit 6d includes both the transistor Q1 and series resistor R4 for increasing the speed of normal turn-off of the power semiconductor device 2 as described above with reference to Figure 1 and an arrangement similar to that shown in Figure 2
The resistor R3 may, typically, have a value of 50kQ (kilo-ohms) while the resistors R4, R5 and R6 may have typically values of 100 or 200 kn, 1 to 10 kQ and 100 or 200 kQ, respectively, and the resistors R1 and R2 values of 1009 to 1 kQ.
One or more input protection zener diodes may be connected between the gate input terminal G and the supply line 7 as indicated by the zener diode 20 in Figure 4.
The transistors Q1,Q2,Q3 are generally lateral IGFETs and together with the resistors R1,R2,R3,R4,R5,R6 may be integrated in the same semiconductor body as the power semiconductor device 2.
The resistors may be diffused resistors provided within the semiconductor body or thin film (e.g. polycrystalline) resistors provided on and insulated from the surface of the semiconductor body as appropriate. It will have been noticed in the drawings that the back gates bg of the transistors Q1,Q2,Q3 are not shown shorted to their respective sources as is conventional. In fact this may be the case, or the back gates could be coupled to a suitable reference potential, for example by being connected to the supply line 7.
The circuit could also include other monitoring and control elements for example sensors for detecting the temperature of the power semiconductor device.
The power semiconductor device 2 need not necessarily be a power MOSFET but could for example be an insulated gate bipolar transistor IGBT.
Also, although the power semiconductor device 2 is an n-channel device in the examples described above, the present invention could be applied to a p-channel device with appropriate changes in voltages etc. Similarly, although the Figures show a low-side switch the present invention could be applied to a high-side switch.
From reading the present disclosure, other modifications and variations will be apparent to persons skilled in the art. Such modifications and variations may involve other features which are already known in the semiconductor art and which may be used instead of or in addition to features already described herein.
Although claims have been formulated in this application to particular combinations of features, it should be understood that the scope of the disclosure of the present application also includes any novel feature or any novel combination of features disclosed herein either explicitly or implicitly, whether or not it relates to the same invention as presently claimed in any claim and whether or not it mitigates any or all of the same technical problems as does the present invention. The applicants hereby give notice that new claims may be formulated to such features and/or combinations of such features during the prosecution of the present application or of any further application derived therefrom.
Claims (9)
1. A power semiconductor device circuit comprising an insulated gate field effect power semiconductor device having first and second main electrodes and a gate electrode and a gate control circuit providing a conductive path between the gate electrode and a gate voltage supply terminal, the gate control circuit comprising a resistance coupled between the gate electrode and the gate voltage supply terminal and a transistor having first and second main electrodes and a control electrode with the first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes of the transistor is coupled in parallel with the resistance and means for applying a control signal to the control electrode of the transistor to switch the transistor between a conducting and a non-conducting state to alter the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal.
2. A power semiconductor device circuit according to claim 1, wherein a further resistance is coupled in series with the transistor.
3. A power semiconductor device circuit according to Claim 1 or 2, wherein the gate control circuit is provided to facilitate turn off of the power semiconductor device when the gate voltage is removed from the gate voltage supply terminal and wherein the transistor comprises an insulated gate field effect transistor and the control signal applying means comprises a coupling between the control electrode of the transistor and the gate electrode of the power semiconductor device for causing the transistor to be rendered conducting when the gate voltage is removed from the gate voltage supply terminal thereby reducing the overall resistance between the gate electrode and the gate voltage supply terminal.
4. A power semiconductor device circuit according to Claim 1 or 2, wherein a fault detection circuit is provided for detecting an abnormal condition of the power semiconductor device, the fault detection circuit having a control output for providing an output signal for switching off the power semiconductor device when an abnormal condition is detected, and wherein the means for applying the control signal to the transistor comprises an additional resistance coupled in series with the main current path between first and second main electrodes of a further transistor to a voltage supply, the first main electrode of the further transistor being coupled to the additional resistance and the control electrode of the transistor so that the transistor is normally conducting, the further transistor having a control electrode coupled to the output of the fault detection circuit for causing, when the fault detection circuit provides an output signal indicating the existence of an abnormal condition, the further transistor to be rendered conducting thereby causing the transistor to become non-conducting, so increasing the overall resistance of the conductive path between the gate voltage supply terminal.
5. A power semiconductor device circuit according to Claim 3, wherein a fault detection circuit is provided for detecting an abnormal condition of the power semiconductor device, the fault detection circuit having a control output for providing an output signal for switching off the power semiconductor device when an abnormal condition is detected and wherein the gate control circuit additionally comprises an additional transistor having first and second main electrodes and a control electrode with the first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes of the additional transistor is coupled in parallel with the resistance, and means for applying a control signal to the additional transistor comprising another resistance coupled in series with the main current path between first and second main electrodes of a further transistor to a voltage supply, the first main electrode of the further transistor being coupled to the said other resistance and the control electrode of the additional transistor so that the additional transistor is normally conducting, the further transistor having a control electrode coupled to the output of the fault detection circuit for causing, when the fault detection circuit provides an output signal indicating the existence of an abnormal condition, the further transistor to be rendered conducting thereby causing the additional transistor to become non-conducting, so increasing the overall resistance of the conductive path between the gate voltage supply terminal.
6. A power semiconductor device circuit according to Claim 5, wherein another resistance is coupled in series with the transistor.
7. A power semiconductor device circuit according to claim 4,5 or 6, wherein a fault detection transistor has its control electrode coupled to the control output of the fault detection circuit and one of its first and second main electrodes coupled to the gate electrode of the power semiconductor device and the other to a voltage supply so that when the fault detection transistor is rendered conducting by the output signal from the fault detection circuit the power semiconductor device is switched off.
8. A power semiconductor device circuit according to any one of the preceding claims, wherein a voltage clamping circuit is coupled between one of the first and second main electrodes and the gate electrode of the power semiconductor device for causing the power semiconductor device to be switched from a non-conducting to a conducting state when the voltage at the one main electrode exceeds a predetermined limit.
9. A power semiconductor device circuit substantially as hereinbefore described with reference to Figures 1,2,3 or 4 of the accompanying drawings.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9312814A GB2279524A (en) | 1993-06-22 | 1993-06-22 | Gate control circuit for power MOSFET |
| GB9407443A GB9407443D0 (en) | 1993-06-22 | 1994-04-14 | A power semiconductor circuit |
| EP94201756A EP0631390B1 (en) | 1993-06-22 | 1994-06-20 | A power semiconductor circuit |
| DE69420327T DE69420327T2 (en) | 1993-06-22 | 1994-06-20 | Semiconductor power circuit |
| JP13889694A JP3580857B2 (en) | 1993-06-22 | 1994-06-21 | Power semiconductor device circuit |
| US08/263,701 US5506539A (en) | 1993-06-22 | 1994-06-22 | IGFET power semiconductor circuit with GAE control and fault detection circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9312814A GB2279524A (en) | 1993-06-22 | 1993-06-22 | Gate control circuit for power MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9312814D0 GB9312814D0 (en) | 1993-08-04 |
| GB2279524A true GB2279524A (en) | 1995-01-04 |
Family
ID=10737547
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9312814A Withdrawn GB2279524A (en) | 1993-06-22 | 1993-06-22 | Gate control circuit for power MOSFET |
| GB9407443A Pending GB9407443D0 (en) | 1993-06-22 | 1994-04-14 | A power semiconductor circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9407443A Pending GB9407443D0 (en) | 1993-06-22 | 1994-04-14 | A power semiconductor circuit |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB2279524A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5808504A (en) * | 1995-08-25 | 1998-09-15 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor drive circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3872325A (en) * | 1973-10-17 | 1975-03-18 | Rca Corp | R-F switching circuit |
| US4445055A (en) * | 1981-03-05 | 1984-04-24 | Siemens Aktiengesellschaft | Circuit arrangement for controlling a power field-effect switching transistor |
| US4746813A (en) * | 1987-06-04 | 1988-05-24 | General Motors Corporation | Switching circuit for inductive load with RFI suppression |
| US5006737A (en) * | 1989-04-24 | 1991-04-09 | Motorola Inc. | Transformerless semiconductor AC switch having internal biasing means |
| EP0442561A1 (en) * | 1990-02-15 | 1991-08-21 | Matsushita Electric Works, Ltd. | Semiconductor relay circuit |
| US5173848A (en) * | 1991-09-06 | 1992-12-22 | Roof Richard W | Motor controller with bi-modal turnoff circuits |
-
1993
- 1993-06-22 GB GB9312814A patent/GB2279524A/en not_active Withdrawn
-
1994
- 1994-04-14 GB GB9407443A patent/GB9407443D0/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3872325A (en) * | 1973-10-17 | 1975-03-18 | Rca Corp | R-F switching circuit |
| US4445055A (en) * | 1981-03-05 | 1984-04-24 | Siemens Aktiengesellschaft | Circuit arrangement for controlling a power field-effect switching transistor |
| US4746813A (en) * | 1987-06-04 | 1988-05-24 | General Motors Corporation | Switching circuit for inductive load with RFI suppression |
| US5006737A (en) * | 1989-04-24 | 1991-04-09 | Motorola Inc. | Transformerless semiconductor AC switch having internal biasing means |
| EP0442561A1 (en) * | 1990-02-15 | 1991-08-21 | Matsushita Electric Works, Ltd. | Semiconductor relay circuit |
| US5173848A (en) * | 1991-09-06 | 1992-12-22 | Roof Richard W | Motor controller with bi-modal turnoff circuits |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5808504A (en) * | 1995-08-25 | 1998-09-15 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9407443D0 (en) | 1994-06-08 |
| GB9312814D0 (en) | 1993-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5506539A (en) | IGFET power semiconductor circuit with GAE control and fault detection circuits | |
| US7576964B2 (en) | Overvoltage protection circuit of output MOS transistor | |
| US5818281A (en) | Semiconductor circuit having turn-on prevention capability of switching semiconductor device during off cycle thereof by undesired transient voltages | |
| JP3448340B2 (en) | IGBT fault current limiting circuit and method | |
| EP0369448B1 (en) | Drive circuit for use with voltage-driven semiconductor device | |
| EP0294887B1 (en) | Driving a semiconductor device | |
| EP0419991A2 (en) | Load driver with reduced dissipation under reverse-battery conditions | |
| KR100194128B1 (en) | Morsegate integrated power semiconductor device with high negative clamp voltage and fail-safe operation | |
| US5789951A (en) | Monolithic clamping circuit and method of preventing transistor avalanche breakdown | |
| JPH10150354A (en) | Switch device having power fet and short-circuit recognition part | |
| EP0380881B1 (en) | Protection circuit for a power mosfet driving an inductive load | |
| US5909135A (en) | High-side MOSFET gate protection shunt circuit | |
| EP1881606B1 (en) | Switch arrangement and method for electrical switching | |
| US6169439B1 (en) | Current limited power MOSFET device with improved safe operating area | |
| US5561391A (en) | Clamp circuit and method for detecting an activation of same | |
| CN113394956A (en) | Adjustable soft turn-off and current booster for gate driver | |
| CN109285726B (en) | Discharge circuit with temperature protection for discharging an inductor | |
| JP3414859B2 (en) | Turn-off circuit device for overcurrent of semiconductor device | |
| EP1113452A2 (en) | Internal protection circuit and method for on chip programmable poly fuses | |
| JP3964833B2 (en) | Intelligent power device and load short circuit protection method thereof | |
| US6008972A (en) | Short circuit protection circuit for a low-side driver circuit | |
| CN112534668B (en) | Boost converter short circuit protection | |
| US6917227B1 (en) | Efficient gate driver for power device | |
| JPH02278915A (en) | Protective circuit of power mos-fet | |
| EP0632501A1 (en) | A semiconductor device including protection means |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |