JPS6482708A - Mos-fet driving circuit - Google Patents
Mos-fet driving circuitInfo
- Publication number
- JPS6482708A JPS6482708A JP62241835A JP24183587A JPS6482708A JP S6482708 A JPS6482708 A JP S6482708A JP 62241835 A JP62241835 A JP 62241835A JP 24183587 A JP24183587 A JP 24183587A JP S6482708 A JPS6482708 A JP S6482708A
- Authority
- JP
- Japan
- Prior art keywords
- turn
- mos
- fet
- charges
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To increase the dielectric strength and to enable fast switching opera tion by providing a resistance value switching part which switches the resistance value of an output resistor according to the direction of charges which flow to the gate of a MOSFET. CONSTITUTION:The resistance value is switched to a turn-on output resistance 1 or turn-on output resistance 2 according to the direction of the charges flowing to the gate 15 of the MOS-FET 12. Namely, the charges move from a MOS-FET driving circuit, 11 to the gate 15 of the MOS-FET 12 through the turn-on output resistance 1 and a diode 4 in turn-on operation. In turn-off operation, on the other hand, the charges are attracted from the gate 15 of the MOS-FET 12 to the MOS-FET driving circuit 11 through the turn-off resistance 2 and diode 3. Then the driving current of the MOSFET 12 flows in an impulsive state in the turn-on operation and turn-off operation and almost no current flows in a stationary state, so operation with the practical value of reverse recovery charges of the diode is enabled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241835A JPS6482708A (en) | 1987-09-24 | 1987-09-24 | Mos-fet driving circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241835A JPS6482708A (en) | 1987-09-24 | 1987-09-24 | Mos-fet driving circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482708A true JPS6482708A (en) | 1989-03-28 |
Family
ID=17080206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62241835A Pending JPS6482708A (en) | 1987-09-24 | 1987-09-24 | Mos-fet driving circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482708A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521803A (en) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Works Ltd | Insulated gate type field effect semiconductor device |
EP0631390A2 (en) * | 1993-06-22 | 1994-12-28 | Philips Electronics Uk Limited | A power semiconductor circuit |
JP2002246599A (en) * | 2001-02-16 | 2002-08-30 | Mitsubishi Electric Corp | Field effect semiconductor device and its manufacturing method |
DE102009020126A1 (en) * | 2009-05-06 | 2010-11-18 | Siemens Aktiengesellschaft | Electrical device has insulated gate bipolar transistor, whose gate is connected with driver unit by resistance network forming gate-series resistor |
JP2015520882A (en) * | 2012-04-12 | 2015-07-23 | コーニンクレッカ フィリップス エヌ ヴェ | Digital communication interface circuit for line pairs with individually adjustable transition edges |
JP2016152672A (en) * | 2015-02-17 | 2016-08-22 | ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー(ホンコン)リミテッド | Power conversion device and air conditioner having the same |
JP2019149558A (en) * | 2014-05-12 | 2019-09-05 | ローム株式会社 | Semiconductor device |
US11133398B2 (en) | 2014-05-12 | 2021-09-28 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
-
1987
- 1987-09-24 JP JP62241835A patent/JPS6482708A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521803A (en) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Works Ltd | Insulated gate type field effect semiconductor device |
EP0631390A2 (en) * | 1993-06-22 | 1994-12-28 | Philips Electronics Uk Limited | A power semiconductor circuit |
EP0631390B1 (en) * | 1993-06-22 | 1999-09-01 | Philips Electronics Uk Limited | A power semiconductor circuit |
JP2002246599A (en) * | 2001-02-16 | 2002-08-30 | Mitsubishi Electric Corp | Field effect semiconductor device and its manufacturing method |
DE102009020126A1 (en) * | 2009-05-06 | 2010-11-18 | Siemens Aktiengesellschaft | Electrical device has insulated gate bipolar transistor, whose gate is connected with driver unit by resistance network forming gate-series resistor |
JP2015520882A (en) * | 2012-04-12 | 2015-07-23 | コーニンクレッカ フィリップス エヌ ヴェ | Digital communication interface circuit for line pairs with individually adjustable transition edges |
JP2019149558A (en) * | 2014-05-12 | 2019-09-05 | ローム株式会社 | Semiconductor device |
JP2021007165A (en) * | 2014-05-12 | 2021-01-21 | ローム株式会社 | Semiconductor device |
US11133398B2 (en) | 2014-05-12 | 2021-09-28 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
US11942531B2 (en) | 2014-05-12 | 2024-03-26 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
JP2016152672A (en) * | 2015-02-17 | 2016-08-22 | ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー(ホンコン)リミテッド | Power conversion device and air conditioner having the same |
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