JPS6482708A - Mos-fet driving circuit - Google Patents

Mos-fet driving circuit

Info

Publication number
JPS6482708A
JPS6482708A JP62241835A JP24183587A JPS6482708A JP S6482708 A JPS6482708 A JP S6482708A JP 62241835 A JP62241835 A JP 62241835A JP 24183587 A JP24183587 A JP 24183587A JP S6482708 A JPS6482708 A JP S6482708A
Authority
JP
Japan
Prior art keywords
turn
mos
fet
charges
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62241835A
Other languages
Japanese (ja)
Inventor
Mitsuharu Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62241835A priority Critical patent/JPS6482708A/en
Publication of JPS6482708A publication Critical patent/JPS6482708A/en
Pending legal-status Critical Current

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  • Electronic Switches (AREA)

Abstract

PURPOSE:To increase the dielectric strength and to enable fast switching opera tion by providing a resistance value switching part which switches the resistance value of an output resistor according to the direction of charges which flow to the gate of a MOSFET. CONSTITUTION:The resistance value is switched to a turn-on output resistance 1 or turn-on output resistance 2 according to the direction of the charges flowing to the gate 15 of the MOS-FET 12. Namely, the charges move from a MOS-FET driving circuit, 11 to the gate 15 of the MOS-FET 12 through the turn-on output resistance 1 and a diode 4 in turn-on operation. In turn-off operation, on the other hand, the charges are attracted from the gate 15 of the MOS-FET 12 to the MOS-FET driving circuit 11 through the turn-off resistance 2 and diode 3. Then the driving current of the MOSFET 12 flows in an impulsive state in the turn-on operation and turn-off operation and almost no current flows in a stationary state, so operation with the practical value of reverse recovery charges of the diode is enabled.
JP62241835A 1987-09-24 1987-09-24 Mos-fet driving circuit Pending JPS6482708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62241835A JPS6482708A (en) 1987-09-24 1987-09-24 Mos-fet driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241835A JPS6482708A (en) 1987-09-24 1987-09-24 Mos-fet driving circuit

Publications (1)

Publication Number Publication Date
JPS6482708A true JPS6482708A (en) 1989-03-28

Family

ID=17080206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241835A Pending JPS6482708A (en) 1987-09-24 1987-09-24 Mos-fet driving circuit

Country Status (1)

Country Link
JP (1) JPS6482708A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521803A (en) * 1991-07-12 1993-01-29 Matsushita Electric Works Ltd Insulated gate type field effect semiconductor device
EP0631390A2 (en) * 1993-06-22 1994-12-28 Philips Electronics Uk Limited A power semiconductor circuit
JP2002246599A (en) * 2001-02-16 2002-08-30 Mitsubishi Electric Corp Field effect semiconductor device and its manufacturing method
DE102009020126A1 (en) * 2009-05-06 2010-11-18 Siemens Aktiengesellschaft Electrical device has insulated gate bipolar transistor, whose gate is connected with driver unit by resistance network forming gate-series resistor
JP2015520882A (en) * 2012-04-12 2015-07-23 コーニンクレッカ フィリップス エヌ ヴェ Digital communication interface circuit for line pairs with individually adjustable transition edges
JP2016152672A (en) * 2015-02-17 2016-08-22 ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー（ホンコン）リミテッド Power conversion device and air conditioner having the same
JP2019149558A (en) * 2014-05-12 2019-09-05 ローム株式会社 Semiconductor device
US11133398B2 (en) 2014-05-12 2021-09-28 Rohm Co., Ltd. Semiconductor device including sense insulated-gate bipolar transistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521803A (en) * 1991-07-12 1993-01-29 Matsushita Electric Works Ltd Insulated gate type field effect semiconductor device
EP0631390A2 (en) * 1993-06-22 1994-12-28 Philips Electronics Uk Limited A power semiconductor circuit
EP0631390B1 (en) * 1993-06-22 1999-09-01 Philips Electronics Uk Limited A power semiconductor circuit
JP2002246599A (en) * 2001-02-16 2002-08-30 Mitsubishi Electric Corp Field effect semiconductor device and its manufacturing method
DE102009020126A1 (en) * 2009-05-06 2010-11-18 Siemens Aktiengesellschaft Electrical device has insulated gate bipolar transistor, whose gate is connected with driver unit by resistance network forming gate-series resistor
JP2015520882A (en) * 2012-04-12 2015-07-23 コーニンクレッカ フィリップス エヌ ヴェ Digital communication interface circuit for line pairs with individually adjustable transition edges
JP2019149558A (en) * 2014-05-12 2019-09-05 ローム株式会社 Semiconductor device
JP2021007165A (en) * 2014-05-12 2021-01-21 ローム株式会社 Semiconductor device
US11133398B2 (en) 2014-05-12 2021-09-28 Rohm Co., Ltd. Semiconductor device including sense insulated-gate bipolar transistor
US11942531B2 (en) 2014-05-12 2024-03-26 Rohm Co., Ltd. Semiconductor device including sense insulated-gate bipolar transistor
JP2016152672A (en) * 2015-02-17 2016-08-22 ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー（ホンコン）リミテッド Power conversion device and air conditioner having the same

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