JPS56166635A - Gate circuit of gate turn-off thyristor - Google Patents

Gate circuit of gate turn-off thyristor

Info

Publication number
JPS56166635A
JPS56166635A JP7070580A JP7070580A JPS56166635A JP S56166635 A JPS56166635 A JP S56166635A JP 7070580 A JP7070580 A JP 7070580A JP 7070580 A JP7070580 A JP 7070580A JP S56166635 A JPS56166635 A JP S56166635A
Authority
JP
Japan
Prior art keywords
gate
thyristor
circuit
switches
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7070580A
Other languages
Japanese (ja)
Inventor
Yasuo Matsuda
Kazuo Honda
Mitsusachi Motobe
Hiroshi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7070580A priority Critical patent/JPS56166635A/en
Publication of JPS56166635A publication Critical patent/JPS56166635A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To improve the reliability of operation and to reduce power consumption greatly by connecting power sources for on-operation and off-operation to a gate turn-off thyristor circuit in time-division mode by a bridge circuit which uses four semiconductor switching elements. CONSTITUTION:When an input signal S1 is applied to a photocoupler 39, its phototransistor TR part switches on to drive following TRs 32 and 33 for on-operation, thereby flowing an on-gate current to a gate turn-off thyristor GTO circuit. When the input signal to the coupler 39 goes to zero and the phototransistor TR switches off, a TR38 switches on to drive following TRs 36 and 37 for off-operation, thereby flowing an off-gate current to the thyristor GTO. Consequently, the reliability of the operations of two power sources for the on-operation and off-operation and the power consumption is reduced greatly.
JP7070580A 1980-05-26 1980-05-26 Gate circuit of gate turn-off thyristor Pending JPS56166635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7070580A JPS56166635A (en) 1980-05-26 1980-05-26 Gate circuit of gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7070580A JPS56166635A (en) 1980-05-26 1980-05-26 Gate circuit of gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS56166635A true JPS56166635A (en) 1981-12-21

Family

ID=13439268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7070580A Pending JPS56166635A (en) 1980-05-26 1980-05-26 Gate circuit of gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS56166635A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288425A (en) * 1985-10-14 1987-04-22 Fuji Electric Co Ltd Drive circuit for semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4220411Y1 (en) * 1964-09-12 1967-11-28
JPS50107851A (en) * 1974-01-30 1975-08-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4220411Y1 (en) * 1964-09-12 1967-11-28
JPS50107851A (en) * 1974-01-30 1975-08-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288425A (en) * 1985-10-14 1987-04-22 Fuji Electric Co Ltd Drive circuit for semiconductor device
JPH0473807B2 (en) * 1985-10-14 1992-11-24

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