JPS57186834A - Gate circuit of gate turn-off thyristor - Google Patents

Gate circuit of gate turn-off thyristor

Info

Publication number
JPS57186834A
JPS57186834A JP56072966A JP7296681A JPS57186834A JP S57186834 A JPS57186834 A JP S57186834A JP 56072966 A JP56072966 A JP 56072966A JP 7296681 A JP7296681 A JP 7296681A JP S57186834 A JPS57186834 A JP S57186834A
Authority
JP
Japan
Prior art keywords
thyristor
gate
circuit
turn
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56072966A
Other languages
Japanese (ja)
Inventor
Eiji Akagawa
Hideo Koo
Shunichi Yuya
Atsushi Kaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56072966A priority Critical patent/JPS57186834A/en
Publication of JPS57186834A publication Critical patent/JPS57186834A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To prevent inrush of an on-signal in a turn-off period, and to elevate reliability of a circuit, by connecting a thyristor having a turn-on period synchronizing with a gate turn-off signal, between the gate of a gate turn-off thyristor and the gate turn-on and off circuit. CONSTITUTION:A gate circuit is constituted of a gate turn-on circuit 2A, a gate turn-off circuit 2B and a gate turn-off thyristor 1, and a parallel circuit consisting of a thyristor 8 and a diode 9 is connected between a parallel connecting point of the on-circuit 2A and the off-circuit 2B, and the thyristor 1. Also, the gate of the thyristor 8 is connected to the base of a transistor 5A of the on-circuit 2A through a transformer 10 and 11. Subsequently, a gate signal synchronizing with a turn-on signal of the thyristor 1 is supplied to the thyristor 8 through the transistors 10, 11, is made to conduct only in the on-period of the thyristor 1, and in case of off, it is turned off by applying reverse voltage due to a forward voltage drop of the diode 9, and a current of the on-signal of the thyristor 1 is obstructed.
JP56072966A 1981-05-13 1981-05-13 Gate circuit of gate turn-off thyristor Pending JPS57186834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072966A JPS57186834A (en) 1981-05-13 1981-05-13 Gate circuit of gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072966A JPS57186834A (en) 1981-05-13 1981-05-13 Gate circuit of gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS57186834A true JPS57186834A (en) 1982-11-17

Family

ID=13504626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072966A Pending JPS57186834A (en) 1981-05-13 1981-05-13 Gate circuit of gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS57186834A (en)

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