JP4251326B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4251326B2 JP4251326B2 JP2004270118A JP2004270118A JP4251326B2 JP 4251326 B2 JP4251326 B2 JP 4251326B2 JP 2004270118 A JP2004270118 A JP 2004270118A JP 2004270118 A JP2004270118 A JP 2004270118A JP 4251326 B2 JP4251326 B2 JP 4251326B2
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- 239000004065 semiconductor Substances 0.000 title claims description 424
- 239000012535 impurity Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 30
- 230000015556 catabolic process Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000002441 reversible effect Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Description
この構造では、ダイシングにより切断された半導体基板(27)の側面(28)に第1の半導体領域(21)と外縁領域(23a)との界面に形成されるPN接合が露出しないので、半導体基板(27)の側面(28)に結晶欠陥や異物付着があっても逆方向漏れ電流が増加しない。このため、第1の半導体装置より更に耐圧を安定して向上させることができる。また、半導体基板(27)の側面(28)から離間して、相対的に不純物濃度の高いP型半導体領域である第3の半導体領域(23)の外縁領域(23a)と、相対的に不純物濃度の高いN型半導体領域である第2の半導体領域(22)との間にPN接合が形成される。半導体基板(27)の側面(28)から離間して、相対的に不純物濃度の高いP型半導体領域である第3の半導体領域(23)の外縁領域(23a)と、相対的に不純物濃度の高いN型半導体領域である第4の半導体領域(24)との間にPN接合が形成される。半導体基板(27)の側面(28)から離間して、相対的に不純物濃度の低いP型半導体領域である第3の半導体領域(23)の外縁領域(23a)と、相対的に不純物濃度の低いN型半導体領域である第1の半導体領域(21)との間にPN接合が形成される。従って、本発明の半導体装置に逆方向バイアスが印加されたとき、第3の半導体領域(23)の外縁領域(23a)と第2の半導体領域(22)との間及び第3の半導体領域(23)の外縁領域(23a)と第4の半導体領域(24)との間に形成される半導体基板(27)の中央側のPN接合から広がる空乏層の幅よりも、第3の半導体領域(23)の外縁領域(23a)と第1の半導体領域(21)との間に形成される半導体基板(27)の外周側のPN接合から広がる空乏層の幅が広くなって、電気抵抗が増加し、降伏現象の発生領域を半導体基板(27)の中央側に形成して、耐圧変動の発生を抑制することができる。
Claims (4)
- 第1の半導体領域と、該第1の半導体領域と同一の導電型で且つ前記第1の半導体領域よりも高い不純物拡散濃度で前記第1の半導体領域の一方側に形成された第2の半導体領域と、前記第1の半導体領域及び前記第2の半導体領域とは異なる導電型を有し且つ前記第1の半導体領域とは反対側で前記第2の半導体領域に隣接して配置された第3の半導体領域とを有する半導体基板を備え、前記第2の半導体領域と前記第3の半導体領域との間にPN接合領域を形成した半導体装置において、
前記半導体基板は、前記第1の半導体領域よりも高い不純物拡散濃度で且つ前記第3の半導体領域とは異なる導電型で前記第1の半導体領域の他方側に形成された第4の半導体領域を備え、
前記第3の半導体領域は、前記第2の半導体領域の外側面と、前記第1の半導体領域の外側面と、前記第4の半導体領域の外側面とを包囲する外縁領域を有し、
前記第2の半導体領域の外側面と、前記第1の半導体領域の外側面と、前記第4の半導体領域の外側面は、前記半導体基板の側面に露出せず、
前記第1の半導体領域の外側面に環状突起を設け、
前記環状突起を底部として前記第1の半導体領域の外側面と前記第2の半導体領域の外側面を錐体状に傾斜させ、
前記第1の半導体領域の外側面と前記第4の半導体領域の外側面を前記環状突起を底部として逆錐体状に傾斜させ、
前記第1の半導体領域の外側面よりも前記半導体基板の側面から中央側に離間して、前記第2の半導体領域の外側面及び前記第4の半導体領域の外側面を形成することを特徴とする半導体装置。 - 前記第3の半導体領域の外縁領域と前記第4の半導体領域の外側面とが接触する前記第4の半導体領域の主面は、開口部が形成された絶縁層により被覆され、前記開口部を通じて前記第4の半導体領域と電極とが接触する請求項1に記載の半導体装置。
- 前記第3の半導体領域は、前記環状突起を境界として上方及び下方に向かって徐々に幅広に形成され且つ不純物濃度が増大する外縁領域を有する請求項1又は2に記載の半導体装置。
- 前記半導体基板の側面から離間して、相対的に不純物濃度の高いP型半導体領域である前記第3の半導体領域の外縁領域と、相対的に不純物濃度の高いN型半導体領域である前記第2の半導体領域との間にPN接合が形成され、
前記半導体基板の側面から離間して、相対的に不純物濃度の高いP型半導体領域である前記第3の半導体領域の外縁領域と、相対的に不純物濃度の高いN型半導体領域である前記第4の半導体領域との間にPN接合が形成され、
前記半導体基板の側面から離間して、相対的に不純物濃度の低いP型半導体領域である前記第3の半導体領域の外縁領域と、相対的に不純物濃度の低いN型半導体領域である前記第1の半導体領域との間にPN接合が形成される請求項1〜3の何れか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004270118A JP4251326B2 (ja) | 2004-03-30 | 2004-09-16 | 半導体装置 |
CNB2005100544251A CN100449790C (zh) | 2004-03-30 | 2005-03-10 | 半导体器件 |
US11/091,961 US7511316B2 (en) | 2004-03-30 | 2005-03-29 | Semiconductor device resistive to high voltage and capable of controlling leakage current |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004098792 | 2004-03-30 | ||
JP2004270118A JP4251326B2 (ja) | 2004-03-30 | 2004-09-16 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005317894A JP2005317894A (ja) | 2005-11-10 |
JP4251326B2 true JP4251326B2 (ja) | 2009-04-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004270118A Expired - Fee Related JP4251326B2 (ja) | 2004-03-30 | 2004-09-16 | 半導体装置 |
Country Status (3)
Country | Link |
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US (1) | US7511316B2 (ja) |
JP (1) | JP4251326B2 (ja) |
CN (1) | CN100449790C (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5044117B2 (ja) * | 2005-12-14 | 2012-10-10 | 関西電力株式会社 | 炭化珪素バイポーラ型半導体装置 |
JP3141688U (ja) * | 2008-02-29 | 2008-05-22 | サンケン電気株式会社 | 半導体装置 |
DE102010028196A1 (de) * | 2010-04-26 | 2011-10-27 | Robert Bosch Gmbh | Temperaturwechselfeste Einpressdiode |
CN102142370B (zh) * | 2010-12-20 | 2013-01-23 | 杭州士兰集成电路有限公司 | 一种在p+衬底上制备低压二极管芯片的方法及其结构 |
CN113488546B (zh) * | 2021-07-02 | 2022-03-11 | 扬州国宇电子有限公司 | 一种超突变变容二极管 |
Family Cites Families (11)
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JPS6033340B2 (ja) * | 1979-02-19 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
JPS55125671A (en) * | 1979-03-22 | 1980-09-27 | Shindengen Electric Mfg Co Ltd | High withstand voltage semiconductor device |
JPH01273361A (ja) | 1988-04-25 | 1989-11-01 | Nec Kansai Ltd | 半導体装置 |
US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
FR2702308B1 (fr) * | 1993-03-01 | 1995-05-24 | Sgs Thomson Microelectronics | Diode à avalanche dans un circuit intégré bipolaire. |
DE4320780B4 (de) * | 1993-06-23 | 2007-07-12 | Robert Bosch Gmbh | Halbleiteranordnung und Verfahren zur Herstellung |
DE19538853A1 (de) * | 1995-10-19 | 1997-04-24 | Bosch Gmbh Robert | Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung |
FR2784801B1 (fr) * | 1998-10-19 | 2000-12-22 | St Microelectronics Sa | Composant de puissance portant des interconnexions |
JP2001257211A (ja) | 2000-03-14 | 2001-09-21 | Hitachi Ltd | ダイオードの製造方法 |
JP4065135B2 (ja) | 2002-02-15 | 2008-03-19 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2004022878A (ja) | 2002-06-18 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
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2004
- 2004-09-16 JP JP2004270118A patent/JP4251326B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-10 CN CNB2005100544251A patent/CN100449790C/zh not_active Expired - Fee Related
- 2005-03-29 US US11/091,961 patent/US7511316B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US7511316B2 (en) | 2009-03-31 |
JP2005317894A (ja) | 2005-11-10 |
CN1677693A (zh) | 2005-10-05 |
US20050218425A1 (en) | 2005-10-06 |
CN100449790C (zh) | 2009-01-07 |
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