DE69325608D1 - Halbleiterbauelement mit einem Schutzmittel - Google Patents

Halbleiterbauelement mit einem Schutzmittel

Info

Publication number
DE69325608D1
DE69325608D1 DE69325608T DE69325608T DE69325608D1 DE 69325608 D1 DE69325608 D1 DE 69325608D1 DE 69325608 T DE69325608 T DE 69325608T DE 69325608 T DE69325608 T DE 69325608T DE 69325608 D1 DE69325608 D1 DE 69325608D1
Authority
DE
Germany
Prior art keywords
semiconductor device
protective agent
protective
agent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325608T
Other languages
English (en)
Other versions
DE69325608T2 (de
Inventor
Richard Paul Notley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69325608D1 publication Critical patent/DE69325608D1/de
Publication of DE69325608T2 publication Critical patent/DE69325608T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69325608T 1992-04-09 1993-04-01 Halbleiterbauelement mit einem Schutzmittel Expired - Fee Related DE69325608T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929207860A GB9207860D0 (en) 1992-04-09 1992-04-09 A semiconductor component

Publications (2)

Publication Number Publication Date
DE69325608D1 true DE69325608D1 (de) 1999-08-19
DE69325608T2 DE69325608T2 (de) 2000-02-17

Family

ID=10713777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325608T Expired - Fee Related DE69325608T2 (de) 1992-04-09 1993-04-01 Halbleiterbauelement mit einem Schutzmittel

Country Status (5)

Country Link
US (1) US5324971A (de)
EP (1) EP0566179B1 (de)
JP (1) JP3288115B2 (de)
DE (1) DE69325608T2 (de)
GB (1) GB9207860D0 (de)

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JP3218642B2 (ja) * 1991-09-27 2001-10-15 富士電機株式会社 大電流集積回路の配線構造
JP2956434B2 (ja) * 1992-10-30 1999-10-04 株式会社デンソー 絶縁分離形半導体装置
US5633526A (en) * 1992-11-01 1997-05-27 Rohm Co., Ltd. Photodiode array and method for manufacturing the same
DE4308624A1 (de) * 1993-03-18 1994-09-22 Abb Management Ag MOS-gesteuertes Leistungshalbleiterbauelement
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
DE4407279C1 (de) * 1994-03-04 1994-10-13 Siemens Ag Halbleiterbauelement für den Überspannungsschutz von MOSFET und IGBT
EP0680089A1 (de) * 1994-04-28 1995-11-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Leistungshalbleiteranordnung mit einer integrierten Schaltungsstruktur zum Schutz gegen Überspannungen und dazugehoriges Herstellungsverfahren
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
JPH07326743A (ja) * 1994-05-31 1995-12-12 Fuji Electric Co Ltd プレーナ型半導体素子
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US5528064A (en) * 1994-08-17 1996-06-18 Texas Instruments Inc. Structure for protecting integrated circuits from electro-static discharge
DE19535247A1 (de) * 1995-09-22 1997-03-27 Ahlborn Dithart Hochleistungs - Funkenzündung
EP0773588B1 (de) * 1995-11-10 2002-06-19 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integriertes MOS-Bauelement mit einer Gateschutzdiode
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices
US5747853A (en) * 1996-08-07 1998-05-05 Megamos Corporation Semiconductor structure with controlled breakdown protection
DE19811297B4 (de) 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
TW417807U (en) * 1997-07-24 2001-01-01 Chen R Shing Switching power supply of half-bridge self-excited booting type having over voltage cutoff function
GB9808237D0 (en) 1998-04-17 1998-06-17 Koninkl Philips Electronics Nv Mnufacture of field-effect semiconductor devices
GB9808234D0 (en) * 1998-04-17 1998-06-17 Koninkl Philips Electronics Nv Mnufacture of trench-gate semiconductor devices
JP3255147B2 (ja) 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
GB9815021D0 (en) 1998-07-11 1998-09-09 Koninkl Philips Electronics Nv Semiconductor power device manufacture
DE19843659A1 (de) * 1998-09-23 2000-04-06 Siemens Ag Halbleiterbauelement mit strukturiertem Halbleiterkörper
DE69910736T2 (de) * 1999-06-03 2004-04-01 Stmicroelectronics S.R.L., Agrate Brianza Randabschluss von Hochspannungs-Halbleiterbauelementen mit einem kapazitiven Spannungsteiler
GB9922763D0 (en) 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Semiconductor devices
JP4024990B2 (ja) * 2000-04-28 2007-12-19 株式会社ルネサステクノロジ 半導体装置
KR100331540B1 (ko) * 2000-06-23 2002-04-06 김덕중 게이트와 에미터 사이의 정전기 방지를 위한 다이오드를포함하는 모스형 반도체 소자
FR2832000B1 (fr) * 2001-11-05 2006-07-21 Alstom Dispositif de protection contre les surtensions d'un composant de puissance
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
DE10260321B4 (de) * 2002-12-20 2016-10-20 Volkswagen Ag Schaltungsanordnung zur Funkentstörung einer Kraftfahrzeugzündanlage
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
US20070153441A1 (en) * 2006-01-05 2007-07-05 Chien-Chin Hsiao Voltage-responsive protection device, and lamp-string apparatus that incorporates the same
US7667491B2 (en) * 2006-02-24 2010-02-23 Freescale Semiconductor, Inc. Low voltage output buffer and method for buffering digital output data
JP5044950B2 (ja) * 2006-03-14 2012-10-10 株式会社デンソー 半導体装置
US8212320B1 (en) * 2006-03-15 2012-07-03 National Semiconductor Corporation High voltage tolerant ESD device
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2008177328A (ja) * 2007-01-18 2008-07-31 Denso Corp 半導体装置およびその製造方法
JP2008227474A (ja) * 2007-02-13 2008-09-25 Toshiba Corp 半導体装置
US8476732B2 (en) * 2008-12-10 2013-07-02 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US9013848B2 (en) 2012-09-27 2015-04-21 Alpha And Omega Semiconductor Incorporated Active clamp protection circuit for power semiconductor device for high frequency switching
EP2975641B1 (de) * 2013-03-14 2021-05-12 Fuji Electric Co., Ltd. Halbleiterbauelement
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
CN104283194B (zh) 2013-07-05 2018-08-03 通用电气公司 具有故障保护功能的电路
JP6286981B2 (ja) * 2013-09-24 2018-03-07 サンケン電気株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014109540B4 (de) * 2014-07-08 2016-08-25 Wenko-Wenselaar Gmbh & Co. Kg Verbesserter Toilettensitz
DE102015111479B4 (de) 2015-07-15 2020-09-24 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer klemmstruktur
JP6258561B1 (ja) 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
JP6301551B1 (ja) * 2016-09-30 2018-03-28 新電元工業株式会社 半導体装置
US10566420B2 (en) 2016-09-30 2020-02-18 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP7388031B2 (ja) * 2019-07-26 2023-11-29 富士電機株式会社 半導体装置

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Also Published As

Publication number Publication date
EP0566179A1 (de) 1993-10-20
DE69325608T2 (de) 2000-02-17
JP3288115B2 (ja) 2002-06-04
EP0566179B1 (de) 1999-07-14
JPH0669423A (ja) 1994-03-11
US5324971A (en) 1994-06-28
GB9207860D0 (en) 1992-05-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee