JP5044950B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5044950B2 JP5044950B2 JP2006069746A JP2006069746A JP5044950B2 JP 5044950 B2 JP5044950 B2 JP 5044950B2 JP 2006069746 A JP2006069746 A JP 2006069746A JP 2006069746 A JP2006069746 A JP 2006069746A JP 5044950 B2 JP5044950 B2 JP 5044950B2
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- 239000004065 semiconductor Substances 0.000 title claims description 144
- 230000015556 catabolic process Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 38
- 239000002344 surface layer Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 27
- 239000010410 layer Substances 0.000 description 16
- 239000000969 carrier Substances 0.000 description 7
- 238000011084 recovery Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007363 ring formation reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
(第1実施形態)
図1は、本発明の第1実施形態に係る半導体装置の要部の概略構成を示す断面図である。また、図2は、半導体装置を構成する要素部分の配置関係を示した模式的な上面視平面図である。
次に、本発明の第2実施形態を、図3に基づいて説明する。図3は、本発明の第2実施形態に係る半導体装置100の要部の概略構成を示す断面図である。
次に、本発明の第3実施形態を、図4に基づいて説明する。図4は、本発明の第3実施形態に係る半導体装置100の要部の概略構成を示す断面図である。
次に、本発明の第4実施形態を、図5に基づいて説明する。図5は、本発明の第4実施形態に係る半導体装置100の要部の概略構成を示す断面図である。
101・・・半導体基板
102・・・ベース領域(第1半導体領域)
102c・・・端部分断領域(第4半導体領域)
103・・・ゲートトレンチ
104・・・ゲート電極
105・・・エミッタ領域(第2半導体領域)
107・・・コレクタ層(第3半導体領域)
109・・・フィールドストップ層(第5半導体領域)
110・・・ガードリング(電界集中抑制部)
110a・・・端部のガードリング(第4半導体領域)
111・・・ダミートレンチ(低耐圧部)
Claims (5)
- 第1主面及び第2主面を有する第1導電型の半導体基板と、
前記半導体基板の第1主面側表層に選択的に形成された第2導電型の第1半導体領域と、
前記第1主面より前記第1半導体領域を貫通し、底面が前記半導体基板に達するゲートトレンチと、
前記ゲートトレンチの底面及び側面上に形成されたゲート絶縁膜を介して、前記トレンチを埋めるゲート電極と、
前記ゲートトレンチの側面部位に隣接し、前記第1半導体領域内の第1主面側表層に選択的に形成された第1導電型の第2半導体領域と、
前記第2半導体領域に電気的に接続されたエミッタ電極と、
前記半導体基板の第2主面側に形成された第2導電型の第3半導体領域と、
前記第3半導体領域に電気的に接続されたコレクタ電極と、を含むIGBT素子を備えた半導体装置であって、
前記半導体基板の第1主面側表層において、前記IGBT素子の形成領域周辺に前記IGBT素子よりも耐圧の低い低耐圧部が形成され、当該低耐圧部の周辺に、前記エミッタ電極と電気的に接続された第2導電型の第4半導体領域が形成されており、
前記半導体基板の第1主面側表層に、前記第1半導体領域を取り囲むように選択的に形成された第2導電型のガードリングを備え、
前記低耐圧部は、前記ガードリングと前記第1半導体領域との間に、前記第1半導体領域を取り囲むように前記第1主面より形成され、前記ゲート電極に対して電気的に独立したダミートレンチであり、
前記ダミートレンチに近接する、前記ガードリングの端部及び前記ゲートトレンチにより区画された前記第1半導体領域の端部の少なくとも一方が、前記第4半導体領域として、前記エミッタ電極と電気的に接続され、
前記ダミートレンチは、前記ガードリングの端部及び前記第1半導体領域の端部のそれぞれと離間して形成されていることを特徴とする半導体装置。 - 前記半導体基板と前記第3半導体領域との間に、第1導電型の第5半導体領域が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記ダミートレンチは、前記ゲートトレンチよりも深く形成されていることを特徴とする請求項1又は請求項2に記載の半導体装置。
- 前記ダミートレンチの底面角部の曲率半径が、前記ゲートトレンチの底面角部の曲率半径よりも小さいことを特徴とする請求項1〜3いずれか1項に記載の半導体装置。
- 前記ガードリングの端部と前記第1半導体領域の端部との間に、前記ガードリング及び前記第1半導体領域よりも浅く形成され、前記エミッタ電極と電気的に接続された第2導電型の第6半導体領域を備え、
前記ダミートレンチは、前記第1主面より前記第6半導体領域を貫通して底面が前記半導体基板に達するように形成されていることを特徴とする請求項1〜4いずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006069746A JP5044950B2 (ja) | 2006-03-14 | 2006-03-14 | 半導体装置 |
US11/714,201 US7692221B2 (en) | 2006-03-14 | 2007-03-06 | Semiconductor device having IGBT element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006069746A JP5044950B2 (ja) | 2006-03-14 | 2006-03-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007250672A JP2007250672A (ja) | 2007-09-27 |
JP5044950B2 true JP5044950B2 (ja) | 2012-10-10 |
Family
ID=38516874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006069746A Expired - Fee Related JP5044950B2 (ja) | 2006-03-14 | 2006-03-14 | 半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US7692221B2 (ja) |
JP (1) | JP5044950B2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5186868B2 (ja) * | 2007-10-03 | 2013-04-24 | 株式会社デンソー | 半導体装置及びその製造方法 |
CN102522427B (zh) | 2008-01-29 | 2014-07-30 | 富士电机株式会社 | 半导体装置 |
JP4544313B2 (ja) * | 2008-02-19 | 2010-09-15 | トヨタ自動車株式会社 | Igbtとその製造方法 |
JP4743447B2 (ja) * | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
JP2010118548A (ja) * | 2008-11-13 | 2010-05-27 | Mitsubishi Electric Corp | 半導体装置 |
JP5331497B2 (ja) * | 2008-11-27 | 2013-10-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5470826B2 (ja) * | 2008-12-08 | 2014-04-16 | 株式会社デンソー | 半導体装置 |
JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP5606240B2 (ja) * | 2010-09-22 | 2014-10-15 | 三菱電機株式会社 | 半導体装置 |
JP5650561B2 (ja) * | 2011-02-24 | 2015-01-07 | 株式会社豊田中央研究所 | 半導体装置 |
US8492866B1 (en) | 2012-01-09 | 2013-07-23 | International Business Machines Corporation | Isolated Zener diode |
JP2013201287A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | パワー半導体装置 |
CN108475701B (zh) * | 2015-11-27 | 2021-03-30 | Abb电网瑞士股份公司 | 面积高效的浮置场环终端 |
CN105609500B (zh) * | 2016-01-28 | 2018-10-12 | 嘉兴爱禾电子有限公司 | 一种共极集成二极管 |
WO2017141998A1 (ja) * | 2016-02-15 | 2017-08-24 | 富士電機株式会社 | 半導体装置 |
US10424635B2 (en) * | 2016-04-06 | 2019-09-24 | Littelfuse, Inc. | High voltage semiconductor device with guard rings and method associated therewith |
JP7024277B2 (ja) | 2017-09-20 | 2022-02-24 | 株式会社デンソー | 半導体装置 |
JP7190256B2 (ja) | 2018-02-09 | 2022-12-15 | ローム株式会社 | 半導体装置 |
CN113054011B (zh) * | 2021-02-09 | 2023-06-20 | 杭州士兰集昕微电子有限公司 | 功率半导体器件及其制造方法 |
Family Cites Families (16)
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GB9207860D0 (en) * | 1992-04-09 | 1992-05-27 | Philips Electronics Uk Ltd | A semiconductor component |
JPH09283754A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 高耐圧半導体装置 |
JPH10178174A (ja) | 1996-10-18 | 1998-06-30 | Hitachi Ltd | 半導体装置及びそれを使った電力変換装置 |
EP0837508A3 (en) | 1996-10-18 | 1999-01-20 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
JPH1187698A (ja) * | 1997-09-02 | 1999-03-30 | Kansai Electric Power Co Inc:The | 高耐圧半導体装置及びこの装置を用いた電力変換器 |
JP3455414B2 (ja) * | 1998-03-17 | 2003-10-14 | 株式会社東芝 | 絶縁ゲート型半導体装置及びその製造方法 |
JP4310017B2 (ja) | 1999-02-17 | 2009-08-05 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
KR100745557B1 (ko) | 1999-02-17 | 2007-08-02 | 가부시키가이샤 히타치세이사쿠쇼 | Igbt 및 전력변환 장치 |
JP4581179B2 (ja) | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
JP3664129B2 (ja) * | 2001-11-28 | 2005-06-22 | 株式会社デンソー | 半導体装置 |
JP3927111B2 (ja) * | 2002-10-31 | 2007-06-06 | 株式会社東芝 | 電力用半導体装置 |
JP4171286B2 (ja) * | 2002-11-07 | 2008-10-22 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP3971327B2 (ja) * | 2003-03-11 | 2007-09-05 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP2004363327A (ja) * | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP4703138B2 (ja) * | 2004-06-18 | 2011-06-15 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP2006049455A (ja) * | 2004-08-03 | 2006-02-16 | Fuji Electric Device Technology Co Ltd | トレンチ型絶縁ゲート半導体装置 |
-
2006
- 2006-03-14 JP JP2006069746A patent/JP5044950B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-06 US US11/714,201 patent/US7692221B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2007250672A (ja) | 2007-09-27 |
US20070215898A1 (en) | 2007-09-20 |
US7692221B2 (en) | 2010-04-06 |
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