JP2023040134A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 164
- 239000000758 substrate Substances 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 15
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000036413 temperature sense Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】半導体装置のトレンチ部は、第1方向に延伸すると共に第2方向に配列される複数のゲートトレンチ部40と、上面視において第2方向に延伸する第1延伸部を有し、第1延伸部が第2端辺と対向する1または複数のゲートトレンチ部の端部と第1接続部を介し接続する第1のゲートランナー50と、上面視において第2方向に延伸する第2延伸部を有し、第2延伸部が第1端辺と対向する1または複数のゲートトレンチ部の端部と第2接続部を介し接続する第2のゲートランナー51と、を備える。上面視において、第1接続部の第1方向の位置と第2接続部の第1方向の位置との間の矩形領域を第1領域とした場合、第1領域よりも第1端辺側の第2領域内に少なくとも1つのトレンチ部が設けられている。
【選択図】図13
Description
関連する先行技術文献として下記の文献がある。
特許文献1 特開2017-147435号公報
特許文献2 特開2017-69412号公報
特許文献3 特開2007-173411号公報
[一般的開示]
Claims (15)
- 半導体基板の上面側に複数のトレンチ部が設けられ、上面視において、第1方向に対向配置された第1端辺および第2端辺と、前記第1方向と垂直な第2方向に対向配置された第3端辺および第4端辺とを含む半導体装置であって、
前記トレンチ部であって、前記第1方向に延伸すると共に前記第2方向に配列される複数のゲートトレンチ部と、
上面視において前記第2方向に延伸する第1延伸部を有し、前記第1延伸部が前記第2端辺と対向する1または複数の前記ゲートトレンチ部の端部と第1接続部を介し接続する第1のゲートランナーと、
上面視において前記第2方向に延伸する第2延伸部を有し、前記第2延伸部が前記第1端辺と対向する1または複数の前記ゲートトレンチ部の端部と第2接続部を介し接続する第2のゲートランナーと、
を備え、
上面視において、前記第1接続部の前記第1方向の位置と前記第2接続部の前記第1方向の位置との間の矩形領域を第1領域とした場合、前記第1領域よりも前記第1端辺側の第2領域内に少なくとも1つの前記トレンチ部が設けられている
半導体装置。 - 半導体基板は、シリコン基板、炭化シリコン基板、または窒化物基板である
請求項1に記載の半導体装置。 - 前記第1領域は、主活性部を含み、
前記第2領域は、上面視においてパッドに挟まれたパッド間領域を含む
請求項1または2に記載の半導体装置。 - 前記第2領域は、トランジスタ部またはダイオード部として動作する素子領域を含む
請求項1から3のいずれか1項に記載の半導体装置。 - 前記第2領域内に設けられた前記トレンチ部は、前記第1領域から分離している
請求項1から4のいずれか1項に記載の半導体装置。 - 前記第1のゲートランナーは、前記第1方向に延伸すると共に、前記第1延伸部に接続される第3延伸部を有し、
前記第2のゲートランナーの前記第2延伸部は、第3延伸部に接続されている
請求項1から5のいずれか1項に記載の半導体装置。 - 前記第1のゲートランナーは、前記第3延伸部に対向して前記第1方向に延伸すると共に、前記第1延伸部に接続される第4延伸部を有し、
前記第2のゲートランナーの前記第2延伸部は、第4延伸部に接続されている
請求項6に記載の半導体装置。 - 前記第1のゲートランナーおよび前記第2のゲートランナーは、金属配線である
請求項1から7のいずれか1項に記載の半導体装置。 - 上面視において前記第2のゲートランナーの前記第2延伸部に接続され、前記第2方向に延伸する半導体配線である第3のゲートランナーを備える
請求項1から8のいずれか1項に記載の半導体装置。 - 前記第2領域内に設けられた前記トレンチ部は、前記第2方向に延伸している
請求項1から9のいずれか1項に記載の半導体装置。 - 前記第2領域内に設けられた前記トレンチ部は、前記第1方向に延伸している
請求項1から9のいずれか1項に記載の半導体装置。 - 前記第2領域内に設けられた前記トレンチ部は、前記第1方向において前記第1領域内に設けられた前記トレンチ部と対向配置されている
請求項11に記載の半導体装置。 - 前記第2領域内に設けられた前記トレンチ部は、前記第1端辺側の端部のみに接続部が設けられている
請求項11または12に記載の半導体装置。 - 前記半導体基板の上面の露出された部分に接続する上面電極を備え、
前記上面電極は、前記第1領域から前記第2領域にかけて設けられている
請求項1から13のいずれか1項に記載の半導体装置。 - 前記トレンチ部であって、前記第1領域および前記第2領域の少なくとも一方に設けられ前記上面電極と接続されたダミートレンチ部を備える
請求項14に記載の半導体装置。
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CN114783999B (zh) * | 2022-06-20 | 2022-09-30 | 深圳芯能半导体技术有限公司 | 一种内置温度传感器的igbt器件及其制备方法 |
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JP2007115888A (ja) * | 2005-10-20 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP4735237B2 (ja) | 2005-12-20 | 2011-07-27 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
JP2009038318A (ja) * | 2007-08-03 | 2009-02-19 | Toshiba Corp | 半導体装置 |
JP2013232533A (ja) * | 2012-04-27 | 2013-11-14 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
CN104995737B (zh) | 2013-02-13 | 2017-10-27 | 丰田自动车株式会社 | 半导体装置 |
US9385222B2 (en) * | 2014-02-14 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with insert structure at a rear side and method of manufacturing |
JP6510310B2 (ja) * | 2014-05-12 | 2019-05-08 | ローム株式会社 | 半導体装置 |
JP6269860B2 (ja) | 2014-12-17 | 2018-01-31 | 三菱電機株式会社 | 半導体装置 |
KR101745776B1 (ko) * | 2015-05-12 | 2017-06-28 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 |
US10217738B2 (en) * | 2015-05-15 | 2019-02-26 | Smk Corporation | IGBT semiconductor device |
US10529839B2 (en) * | 2015-05-15 | 2020-01-07 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6455335B2 (ja) * | 2015-06-23 | 2019-01-23 | 三菱電機株式会社 | 半導体装置 |
JP6604107B2 (ja) * | 2015-07-16 | 2019-11-13 | 富士電機株式会社 | 半導体装置 |
JP6844138B2 (ja) * | 2015-09-16 | 2021-03-17 | 富士電機株式会社 | 半導体装置および製造方法 |
JP6665457B2 (ja) * | 2015-09-16 | 2020-03-13 | 富士電機株式会社 | 半導体装置 |
JP2017069412A (ja) | 2015-09-30 | 2017-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2017099096A1 (ja) * | 2015-12-11 | 2017-06-15 | 富士電機株式会社 | 半導体装置 |
JP6676947B2 (ja) * | 2015-12-14 | 2020-04-08 | 富士電機株式会社 | 半導体装置 |
CN107086217B (zh) | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
JP6668804B2 (ja) * | 2016-02-16 | 2020-03-18 | 富士電機株式会社 | 半導体装置 |
JP6878848B2 (ja) | 2016-02-16 | 2021-06-02 | 富士電機株式会社 | 半導体装置 |
JP6565815B2 (ja) * | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
DE112017000297T5 (de) | 2016-08-12 | 2018-11-15 | Fuji Electric Co., Ltd. | Halbleiterbauteil und Herstellungsverfahren eines Halbleiterbauteils |
US10559663B2 (en) * | 2016-10-14 | 2020-02-11 | Fuji Electric Co., Ltd. | Semiconductor device with improved current flow distribution |
JP6780709B2 (ja) * | 2016-12-16 | 2020-11-04 | 富士電機株式会社 | 半導体装置および製造方法 |
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