DE69421758D1 - Halbleiteranordnung mit einem Schutzmittel - Google Patents

Halbleiteranordnung mit einem Schutzmittel

Info

Publication number
DE69421758D1
DE69421758D1 DE69421758T DE69421758T DE69421758D1 DE 69421758 D1 DE69421758 D1 DE 69421758D1 DE 69421758 T DE69421758 T DE 69421758T DE 69421758 T DE69421758 T DE 69421758T DE 69421758 D1 DE69421758 D1 DE 69421758D1
Authority
DE
Germany
Prior art keywords
semiconductor device
protective agent
protective
agent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69421758T
Other languages
English (en)
Other versions
DE69421758T2 (de
Inventor
Paul Timothy Moody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69421758D1 publication Critical patent/DE69421758D1/de
Application granted granted Critical
Publication of DE69421758T2 publication Critical patent/DE69421758T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69421758T 1993-07-01 1994-06-29 Halbleiteranordnung mit einem Schutzmittel Expired - Lifetime DE69421758T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB939313651A GB9313651D0 (en) 1993-07-01 1993-07-01 A semiconductor device

Publications (2)

Publication Number Publication Date
DE69421758D1 true DE69421758D1 (de) 1999-12-30
DE69421758T2 DE69421758T2 (de) 2000-06-08

Family

ID=10738147

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421758T Expired - Lifetime DE69421758T2 (de) 1993-07-01 1994-06-29 Halbleiteranordnung mit einem Schutzmittel

Country Status (5)

Country Link
US (1) US5466952A (de)
EP (1) EP0632501B1 (de)
JP (1) JP3665367B2 (de)
DE (1) DE69421758T2 (de)
GB (1) GB9313651D0 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702402B1 (de) * 1994-09-13 2003-01-15 STMicroelectronics S.r.l. Verfahren zur Herstellung integrierter Schaltungen und erzeugte Halbleiterscheibe
US5808947A (en) * 1995-08-21 1998-09-15 Sgs-Thomson Microelectronics, Inc. Integrated circuit that supports and method for wafer-level testing
US5861660A (en) * 1995-08-21 1999-01-19 Stmicroelectronics, Inc. Integrated-circuit die suitable for wafer-level testing and method for forming the same
DE19606100C2 (de) * 1996-02-19 2002-02-14 Infineon Technologies Ag Integrierte Schaltungsanordnung zum Ansteuern eines Leistungs-MOSFET mit sourceseitiger Last, insbesondere geeignet für die Verwendung im Kraftfahrzeugbereich
US5723916A (en) * 1996-05-17 1998-03-03 Delco Electronics Corporation Electrical load driving device including load current limiting circuitry
DE59709662D1 (de) * 1996-05-21 2003-05-08 Infineon Technologies Ag MOSFET mit Temperaturschutz
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
JP3414645B2 (ja) * 1998-06-26 2003-06-09 沖電気工業株式会社 半導体装置
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
JP4052923B2 (ja) * 2002-10-25 2008-02-27 株式会社ルネサステクノロジ 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232452A (ja) * 1983-06-16 1984-12-27 Nec Corp Ｃｍｏｓ集積回路
JPS6091675A (ja) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd 半導体装置
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
GB2222884A (en) * 1988-09-19 1990-03-21 Philips Electronic Associated Temperature sensing circuit
GB2224846A (en) * 1988-11-14 1990-05-16 Philips Electronic Associated Temperature sensing circuit
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
DE69225026T2 (de) * 1991-07-19 1998-10-15 Koninkl Philips Electronics Nv Überspannungsgeschützter Halbleiterschalter
GB9216953D0 (en) * 1992-08-11 1992-09-23 Philips Electronics Uk Ltd A semiconductor component

Also Published As

Publication number Publication date
US5466952A (en) 1995-11-14
DE69421758T2 (de) 2000-06-08
EP0632501B1 (de) 1999-11-24
GB9313651D0 (en) 1993-08-18
EP0632501A1 (de) 1995-01-04
JP3665367B2 (ja) 2005-06-29
JPH0758331A (ja) 1995-03-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL