DE69122435T2 - Halbleiteranordnung mit Metallschichten - Google Patents

Halbleiteranordnung mit Metallschichten

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Publication number
DE69122435T2
DE69122435T2 DE69122435T DE69122435T DE69122435T2 DE 69122435 T2 DE69122435 T2 DE 69122435T2 DE 69122435 T DE69122435 T DE 69122435T DE 69122435 T DE69122435 T DE 69122435T DE 69122435 T2 DE69122435 T2 DE 69122435T2
Authority
DE
Germany
Prior art keywords
semiconductor device
metal layers
layers
metal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69122435T
Other languages
English (en)
Other versions
DE69122435D1 (de
Inventor
Ichiharu Kondo
Yoshiaki Inaguma
Yoshitsugu Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of DE69122435D1 publication Critical patent/DE69122435D1/de
Application granted granted Critical
Publication of DE69122435T2 publication Critical patent/DE69122435T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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DE69122435T 1990-06-28 1991-05-22 Halbleiteranordnung mit Metallschichten Expired - Lifetime DE69122435T2 (de)

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Application Number Priority Date Filing Date Title
JP17122390A JPH07101736B2 (ja) 1990-06-28 1990-06-28 半導体装置およびその製造方法

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DE69122435T2 true DE69122435T2 (de) 1997-02-13

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EP (1) EP0463362B1 (de)
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DE (1) DE69122435T2 (de)

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JPH0784647B2 (ja) * 1988-09-15 1995-09-13 日本電装株式会社 ニッケル膜およびそれを形成するスパッタリング方法
DE4139908A1 (de) * 1991-12-04 1993-06-09 Robert Bosch Gmbh, 7000 Stuttgart, De Halbleiteranordnung mit metallschichtsystem sowie verfahren zur herstellung
SE512906C2 (sv) 1998-10-02 2000-06-05 Ericsson Telefon Ab L M Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav
JP2003069019A (ja) * 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
US7678680B2 (en) * 2004-06-03 2010-03-16 International Rectifier Corporation Semiconductor device with reduced contact resistance
US8390131B2 (en) * 2004-06-03 2013-03-05 International Rectifier Corporation Semiconductor device with reduced contact resistance
CN102522326B (zh) * 2011-12-14 2014-09-24 杭州立昂微电子股份有限公司 一种适于丝网印刷的半导体分立器件背面金属的生产方法

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US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias
US3516915A (en) * 1968-05-01 1970-06-23 Bell Telephone Labor Inc Sputtering technique
US3886585A (en) * 1973-07-02 1975-05-27 Gen Motors Corp Solderable multilayer contact for silicon semiconductor
US3945903A (en) * 1974-08-28 1976-03-23 Shatterproof Glass Corporation Sputter-coating of glass sheets or other substrates
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
JPS5654046A (en) * 1979-10-08 1981-05-13 Hitachi Ltd Semiconductor device
JPS586143A (ja) * 1981-07-02 1983-01-13 Matsushita Electronics Corp 半導体装置
US4486511A (en) * 1983-06-27 1984-12-04 National Semiconductor Corporation Solder composition for thin coatings
US4513905A (en) * 1983-07-29 1985-04-30 The Perkin-Elmer Corporation Integrated circuit metallization technique
US4588343A (en) * 1984-05-18 1986-05-13 Varian Associates, Inc. Workpiece lifting and holding apparatus
EP0266205B1 (de) * 1986-10-31 1993-12-15 Nippondenso Co., Ltd. Bipolarer Halbleitertransistor
JPH0687464B2 (ja) * 1986-12-17 1994-11-02 日本電装株式会社 アルミニウム合金配線装置およびその製造方法
US4840302A (en) * 1988-04-15 1989-06-20 International Business Machines Corporation Chromium-titanium alloy
JPH0216789A (ja) * 1988-07-04 1990-01-19 Nec Corp プリント板外周トリミング方法及び装置
JPH0784647B2 (ja) * 1988-09-15 1995-09-13 日本電装株式会社 ニッケル膜およびそれを形成するスパッタリング方法

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DE69122435D1 (de) 1996-11-07
EP0463362A2 (de) 1992-01-02
JPH0458561A (ja) 1992-02-25
EP0463362A3 (en) 1992-11-19
JPH07101736B2 (ja) 1995-11-01
EP0463362B1 (de) 1996-10-02
US5614291A (en) 1997-03-25

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