IT1075077B - Metodo pr realizzare contatti su semiconduttori - Google Patents

Metodo pr realizzare contatti su semiconduttori

Info

Publication number
IT1075077B
IT1075077B IT21021/77A IT2102177A IT1075077B IT 1075077 B IT1075077 B IT 1075077B IT 21021/77 A IT21021/77 A IT 21021/77A IT 2102177 A IT2102177 A IT 2102177A IT 1075077 B IT1075077 B IT 1075077B
Authority
IT
Italy
Prior art keywords
semiconductors
realizing
contacts
realizing contacts
Prior art date
Application number
IT21021/77A
Other languages
English (en)
Inventor
Giulio Iannuzzi
De Martis Carlo Cognetti
Bo Vittorio Del
Luciano Gandolfi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT21021/77A priority Critical patent/IT1075077B/it
Priority to FR7806301A priority patent/FR2383522A1/fr
Priority to DE19782809863 priority patent/DE2809863A1/de
Priority to SE7802570A priority patent/SE437589B/sv
Priority to GB9231/78A priority patent/GB1563773A/en
Priority to US05/957,331 priority patent/US4176443A/en
Application granted granted Critical
Publication of IT1075077B publication Critical patent/IT1075077B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Physical Vapour Deposition (AREA)
IT21021/77A 1977-03-08 1977-03-08 Metodo pr realizzare contatti su semiconduttori IT1075077B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT21021/77A IT1075077B (it) 1977-03-08 1977-03-08 Metodo pr realizzare contatti su semiconduttori
FR7806301A FR2383522A1 (fr) 1977-03-08 1978-03-06 Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs
DE19782809863 DE2809863A1 (de) 1977-03-08 1978-03-07 Verfahren zum herstellen von halbleiterbauelementen
SE7802570A SE437589B (sv) 1977-03-08 1978-03-07 Halvledaranordning innefattande en kiselbricka med minst ett kontaktomrade pa en forsta yta och ett enda kontaktomrade pa en andra yta mittemot den forsta ytan och ett forfarande for framstellning av halvledaranordninge
GB9231/78A GB1563773A (en) 1977-03-08 1978-03-08 Method of producing semi-conductor devices
US05/957,331 US4176443A (en) 1977-03-08 1978-11-03 Method of connecting semiconductor structure to external circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21021/77A IT1075077B (it) 1977-03-08 1977-03-08 Metodo pr realizzare contatti su semiconduttori

Publications (1)

Publication Number Publication Date
IT1075077B true IT1075077B (it) 1985-04-22

Family

ID=11175492

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21021/77A IT1075077B (it) 1977-03-08 1977-03-08 Metodo pr realizzare contatti su semiconduttori

Country Status (5)

Country Link
DE (1) DE2809863A1 (it)
FR (1) FR2383522A1 (it)
GB (1) GB1563773A (it)
IT (1) IT1075077B (it)
SE (1) SE437589B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
GB2184288A (en) * 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
DE3823347A1 (de) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JPH07101736B2 (ja) * 1990-06-28 1995-11-01 日本電装株式会社 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1569479A (it) * 1967-07-13 1969-05-30
GB1288564A (it) * 1969-01-24 1972-09-13
US3663184A (en) * 1970-01-23 1972-05-16 Fairchild Camera Instr Co Solder bump metallization system using a titanium-nickel barrier layer
DE2032872B2 (de) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
GB1360213A (en) * 1971-12-16 1974-07-17 Lucas Industries Ltd Method of mounting a semi-conductor chip on a heat sink
DE2359640C2 (de) * 1973-11-30 1983-09-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer Anschlußkontakt an einen Halbleiterkörper und Verwendung

Also Published As

Publication number Publication date
SE7802570L (sv) 1978-09-09
FR2383522B1 (it) 1983-01-28
GB1563773A (en) 1980-04-02
DE2809863A1 (de) 1978-09-14
FR2383522A1 (fr) 1978-10-06
SE437589B (sv) 1985-03-04

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Effective date: 19950330