DE3888560T2 - Halbleiteranordnung mit einem Thyristor. - Google Patents

Halbleiteranordnung mit einem Thyristor.

Info

Publication number
DE3888560T2
DE3888560T2 DE3888560T DE3888560T DE3888560T2 DE 3888560 T2 DE3888560 T2 DE 3888560T2 DE 3888560 T DE3888560 T DE 3888560T DE 3888560 T DE3888560 T DE 3888560T DE 3888560 T2 DE3888560 T2 DE 3888560T2
Authority
DE
Germany
Prior art keywords
thyristor
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888560T
Other languages
English (en)
Other versions
DE3888560D1 (de
Inventor
Shigenori C O Patent Yakushiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3888560D1 publication Critical patent/DE3888560D1/de
Application granted granted Critical
Publication of DE3888560T2 publication Critical patent/DE3888560T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
DE3888560T 1987-01-23 1988-01-22 Halbleiteranordnung mit einem Thyristor. Expired - Fee Related DE3888560T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62012253A JPS63181376A (ja) 1987-01-23 1987-01-23 半導体装置

Publications (2)

Publication Number Publication Date
DE3888560D1 DE3888560D1 (de) 1994-04-28
DE3888560T2 true DE3888560T2 (de) 1994-08-04

Family

ID=11800199

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888560T Expired - Fee Related DE3888560T2 (de) 1987-01-23 1988-01-22 Halbleiteranordnung mit einem Thyristor.

Country Status (4)

Country Link
US (1) US4992844A (de)
EP (1) EP0281739B1 (de)
JP (1) JPS63181376A (de)
DE (1) DE3888560T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0345012A (ja) * 1989-07-13 1991-02-26 Nippon Inter Electronics Corp 複合半導体装置およびスイッチング回路
JP2513874B2 (ja) * 1989-12-28 1996-07-03 三菱電機株式会社 半導体装置およびその製造方法
US5258641A (en) * 1989-12-28 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
EP0565807A1 (de) * 1992-04-17 1993-10-20 STMicroelectronics S.r.l. MOS-Leistungstransistorbauelement
JP3186405B2 (ja) * 1994-03-08 2001-07-11 富士電機株式会社 横型ｍｏｓｆｅｔ
US5516717A (en) * 1995-04-19 1996-05-14 United Microelectronics Corporation Method for manufacturing electrostatic discharge devices
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
JP3168874B2 (ja) * 1995-05-23 2001-05-21 富士電機株式会社 半導体装置
US5903034A (en) * 1995-09-11 1999-05-11 Hitachi, Ltd. Semiconductor circuit device having an insulated gate type transistor
JP3660566B2 (ja) * 2000-06-30 2005-06-15 新電元工業株式会社 過電流制限型半導体素子
WO2003041236A1 (fr) * 2001-11-07 2003-05-15 Shindengen Electric Manufacturing Co., Ltd. Dispositif semi-conducteur de protection contre la surtension
US6975015B2 (en) * 2003-12-03 2005-12-13 International Business Machines Corporation Modulated trigger device
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8742455B2 (en) * 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US10522674B2 (en) 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
JPS5647704B2 (de) * 1974-07-26 1981-11-11
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5233466A (en) * 1975-09-10 1977-03-14 Hitachi Ltd Semiconductor switch
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4471245A (en) * 1982-06-21 1984-09-11 Eaton Corporation FET Gating circuit with fast turn-on capacitor
JPS6074678A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS63181376A (ja) 1988-07-26
EP0281739B1 (de) 1994-03-23
EP0281739A3 (en) 1990-03-21
JPH0449265B2 (de) 1992-08-11
EP0281739A2 (de) 1988-09-14
US4992844A (en) 1991-02-12
DE3888560D1 (de) 1994-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee