DE3856174D1 - Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET. - Google Patents

Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.

Info

Publication number
DE3856174D1
DE3856174D1 DE3856174T DE3856174T DE3856174D1 DE 3856174 D1 DE3856174 D1 DE 3856174D1 DE 3856174 T DE3856174 T DE 3856174T DE 3856174 T DE3856174 T DE 3856174T DE 3856174 D1 DE3856174 D1 DE 3856174D1
Authority
DE
Germany
Prior art keywords
semiconductor device
power mosfet
vertical power
isolated vertical
isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3856174T
Other languages
English (en)
Other versions
DE3856174T2 (de
Inventor
Akio C O Nec Corporat Tamagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3856174D1 publication Critical patent/DE3856174D1/de
Publication of DE3856174T2 publication Critical patent/DE3856174T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE3856174T 1987-10-27 1988-10-27 Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET. Expired - Fee Related DE3856174T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27222387 1987-10-27

Publications (2)

Publication Number Publication Date
DE3856174D1 true DE3856174D1 (de) 1998-06-10
DE3856174T2 DE3856174T2 (de) 1998-09-03

Family

ID=17510829

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3856174T Expired - Fee Related DE3856174T2 (de) 1987-10-27 1988-10-27 Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.

Country Status (3)

Country Link
US (1) US5045900A (de)
EP (1) EP0314465B1 (de)
DE (1) DE3856174T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34025E (en) * 1987-02-13 1992-08-11 Kabushiki Kaisha Toshiba Semiconductor device with isolation between MOSFET and control circuit
JP2572658B2 (ja) * 1990-02-23 1997-01-16 日本モトローラ株式会社 インテリジェントパワー半導体装置の製造方法
US5294559A (en) * 1990-07-30 1994-03-15 Texas Instruments Incorporated Method of forming a vertical transistor
EP0544047B1 (de) * 1991-11-25 1998-02-18 STMicroelectronics S.r.l. Hochstrom-MOS-Transistor enthaltende integrierte Brückenstruktur mit optimierten Übertragungsleistungsverlusten
JP3216206B2 (ja) * 1992-03-30 2001-10-09 株式会社デンソー 半導体装置及びその製造方法
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
DE4242669C2 (de) * 1992-12-17 2001-09-13 Hanning Electronic Gmbh & Co Halbleiteranordnung mit einem vertikalen Halbleiterleistungsschalter und einer integrierten Schaltung
US6208493B1 (en) 1993-09-13 2001-03-27 Texas Instruments Incorporated Method and system for protecting integrated circuits against a variety of transients
JP3156487B2 (ja) * 1994-03-04 2001-04-16 富士電機株式会社 絶縁ゲート型バイポーラトランジスタ
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
US5814858A (en) * 1996-03-15 1998-09-29 Siliconix Incorporated Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
US5830789A (en) * 1996-11-19 1998-11-03 Integrated Device Technology, Inc. CMOS process forming wells after gate formation
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
KR100281908B1 (ko) * 1998-11-20 2001-02-15 김덕중 반도체소자 및 그 제조방법
GB9929613D0 (en) * 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Manufacture of semiconductor material and devices using that material
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
JP5196794B2 (ja) * 2007-01-29 2013-05-15 三菱電機株式会社 半導体装置
WO2014046061A1 (ja) * 2012-09-18 2014-03-27 富士電機株式会社 半導体装置およびそれを用いた電力変換装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
JPS61196576A (ja) * 1985-02-26 1986-08-30 Nissan Motor Co Ltd 半導体装置
JPS61196568A (ja) * 1985-02-26 1986-08-30 Nissan Motor Co Ltd 半導体装置
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置

Also Published As

Publication number Publication date
US5045900A (en) 1991-09-03
EP0314465A2 (de) 1989-05-03
DE3856174T2 (de) 1998-09-03
EP0314465A3 (de) 1991-07-03
EP0314465B1 (de) 1998-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee