DE3683955D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE3683955D1
DE3683955D1 DE8686304410T DE3683955T DE3683955D1 DE 3683955 D1 DE3683955 D1 DE 3683955D1 DE 8686304410 T DE8686304410 T DE 8686304410T DE 3683955 T DE3683955 T DE 3683955T DE 3683955 D1 DE3683955 D1 DE 3683955D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304410T
Other languages
English (en)
Inventor
Saburo Yamamoto
Hiroshi Hayashi
Taiji Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3683955D1 publication Critical patent/DE3683955D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686304410T 1985-06-11 1986-06-10 Halbleitervorrichtung. Expired - Lifetime DE3683955D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128664A JPS61284988A (ja) 1985-06-11 1985-06-11 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3683955D1 true DE3683955D1 (de) 1992-04-02

Family

ID=14990389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304410T Expired - Lifetime DE3683955D1 (de) 1985-06-11 1986-06-10 Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4819244A (de)
EP (1) EP0205338B1 (de)
JP (1) JPS61284988A (de)
DE (1) DE3683955D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284988A (ja) * 1985-06-11 1986-12-15 Sharp Corp 半導体レ−ザ素子
JP2554192B2 (ja) * 1990-06-20 1996-11-13 シャープ株式会社 半導体レーザの製造方法
US6108471A (en) * 1998-11-17 2000-08-22 Bayspec, Inc. Compact double-pass wavelength multiplexer-demultiplexer having an increased number of channels
US6275630B1 (en) 1998-11-17 2001-08-14 Bayspec, Inc. Compact double-pass wavelength multiplexer-demultiplexer
US6563977B1 (en) 2000-06-27 2003-05-13 Bayspec, Inc. Compact wavelength multiplexer-demultiplexer providing low polarization sensitivity
DE102005050902A1 (de) * 2005-10-21 2007-05-03 Khs Ag Vorrichtung zum Ausrichten von Behältern sowie Etikettiermaschine mit einer solchen Vorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598885A (en) * 1979-01-22 1980-07-28 Sharp Corp Semiconductor laser device
JPS5855674B2 (ja) * 1979-12-29 1983-12-10 富士通株式会社 半導体発光装置の製造方法
JPS5885584A (ja) * 1981-11-16 1983-05-21 Nec Corp 半導体レ−ザ
JPS58148481A (ja) * 1982-03-01 1983-09-03 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JPS58206184A (ja) * 1982-05-25 1983-12-01 Sharp Corp 半導体レ−ザ素子及びその製造方法
JPS5987889A (ja) * 1982-11-10 1984-05-21 Fujitsu Ltd 半導体素子の製造方法
JPS61284988A (ja) * 1985-06-11 1986-12-15 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0205338A3 (en) 1988-01-20
JPS61284988A (ja) 1986-12-15
EP0205338B1 (de) 1992-02-26
US4819244A (en) 1989-04-04
EP0205338A2 (de) 1986-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee