DE69231543D1 - Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren - Google Patents
Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und HerstellungsverfahrenInfo
- Publication number
- DE69231543D1 DE69231543D1 DE69231543T DE69231543T DE69231543D1 DE 69231543 D1 DE69231543 D1 DE 69231543D1 DE 69231543 T DE69231543 T DE 69231543T DE 69231543 T DE69231543 T DE 69231543T DE 69231543 D1 DE69231543 D1 DE 69231543D1
- Authority
- DE
- Germany
- Prior art keywords
- heterojunction
- manufacturing
- integrated circuit
- bipolar transistor
- corresponding integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/738,691 US5446294A (en) | 1991-07-31 | 1991-07-31 | Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69231543D1 true DE69231543D1 (de) | 2000-12-07 |
DE69231543T2 DE69231543T2 (de) | 2001-08-02 |
Family
ID=24969084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69231543T Expired - Fee Related DE69231543T2 (de) | 1991-07-31 | 1992-07-30 | Mikrowellenbipolartransistor mit Heteroübergang, und entsprechende integrierete Schaltung und Herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (2) | US5446294A (de) |
EP (1) | EP0525762B1 (de) |
JP (1) | JPH0621083A (de) |
KR (1) | KR930003418A (de) |
DE (1) | DE69231543T2 (de) |
TW (1) | TW221520B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804487A (en) * | 1996-07-10 | 1998-09-08 | Trw Inc. | Method of fabricating high βHBT devices |
US6762479B2 (en) | 1998-11-06 | 2004-07-13 | International Business Machines Corporation | Microwave array transistor for low-noise and high-power applications |
US6303975B1 (en) | 1999-11-09 | 2001-10-16 | International Business Machines Corporation | Low noise, high frequency solid state diode |
FR2805081B1 (fr) * | 2000-02-14 | 2002-10-11 | Cit Alcatel | Procede de fabrication de transistor bipolaire a double heterojonction sur materiau iii-v |
US6600179B2 (en) * | 2001-11-01 | 2003-07-29 | M/A-Com, Inc. | Power amplifier with base and collector straps |
MY148644A (en) * | 2005-07-18 | 2013-05-15 | Orion Corp | New pharmaceutical compounds |
TWI386642B (zh) * | 2009-06-29 | 2013-02-21 | Century Display Shenzhen Co | 玻璃基板、使用該玻璃基板的檢測方法、以及製作該玻璃基板的矩陣光罩 |
US9728603B2 (en) * | 2015-06-22 | 2017-08-08 | Globalfoundries Inc. | Bipolar junction transistors with double-tapered emitter fingers |
US9899375B1 (en) * | 2016-08-02 | 2018-02-20 | Globalfoundries Inc. | Co-integration of self-aligned and non-self aligned heterojunction bipolar transistors |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
FR2352404A1 (fr) * | 1976-05-20 | 1977-12-16 | Comp Generale Electricite | Transistor a heterojonction |
KR900001394B1 (en) * | 1985-04-05 | 1990-03-09 | Fujitsu Ltd | Super high frequency intergrated circuit device |
EP0558100B1 (de) * | 1986-04-01 | 1996-12-04 | Matsushita Electric Industrial Co., Ltd. | Bipolarer Transistor |
EP0300803B1 (de) * | 1987-07-24 | 1994-06-22 | Matsushita Electric Industrial Co., Ltd. | Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren |
US5124270A (en) * | 1987-09-18 | 1992-06-23 | Kabushiki Kaisha Toshiba | Bipolar transistor having external base region |
US5063427A (en) * | 1987-10-13 | 1991-11-05 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors |
JP2851044B2 (ja) * | 1988-03-30 | 1999-01-27 | 株式会社東芝 | 半導体装置の製造方法 |
US5012318A (en) * | 1988-09-05 | 1991-04-30 | Nec Corporation | Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor |
US5097312A (en) * | 1989-02-16 | 1992-03-17 | Texas Instruments Incorporated | Heterojunction bipolar transistor and integration of same with field effect device |
US4939562A (en) * | 1989-04-07 | 1990-07-03 | Raytheon Company | Heterojunction bipolar transistors and method of manufacture |
JP2804095B2 (ja) * | 1989-07-10 | 1998-09-24 | 株式会社東芝 | ヘテロ接合バイボーラトランジスタ |
US5084750A (en) * | 1991-02-20 | 1992-01-28 | Raytheon Company | Push-pull heterojunction bipolar transistor |
-
1991
- 1991-07-31 US US07/738,691 patent/US5446294A/en not_active Expired - Lifetime
-
1992
- 1992-07-30 EP EP92112998A patent/EP0525762B1/de not_active Expired - Lifetime
- 1992-07-30 DE DE69231543T patent/DE69231543T2/de not_active Expired - Fee Related
- 1992-07-31 KR KR1019920013781A patent/KR930003418A/ko not_active Application Discontinuation
- 1992-07-31 JP JP4247083A patent/JPH0621083A/ja active Pending
-
1993
- 1993-05-18 TW TW082103869A patent/TW221520B/zh active
-
1995
- 1995-06-07 US US08/473,164 patent/US5648278A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0621083A (ja) | 1994-01-28 |
EP0525762A3 (en) | 1994-06-29 |
EP0525762A2 (de) | 1993-02-03 |
DE69231543T2 (de) | 2001-08-02 |
TW221520B (de) | 1994-03-01 |
KR930003418A (ko) | 1993-02-24 |
EP0525762B1 (de) | 2000-11-02 |
US5648278A (en) | 1997-07-15 |
US5446294A (en) | 1995-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |