DE68912963D1 - Integrierter Hochfrequenzschaltkreis des Planartyps mit mindestens einem Mesa Bauelement, und sein Herstellungsverfahren. - Google Patents

Integrierter Hochfrequenzschaltkreis des Planartyps mit mindestens einem Mesa Bauelement, und sein Herstellungsverfahren.

Info

Publication number
DE68912963D1
DE68912963D1 DE89401221T DE68912963T DE68912963D1 DE 68912963 D1 DE68912963 D1 DE 68912963D1 DE 89401221 T DE89401221 T DE 89401221T DE 68912963 T DE68912963 T DE 68912963T DE 68912963 D1 DE68912963 D1 DE 68912963D1
Authority
DE
Germany
Prior art keywords
manufacturing
integrated circuit
frequency integrated
planar type
mesa component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89401221T
Other languages
English (en)
Other versions
DE68912963T2 (de
Inventor
Michel Calligaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson SCF Semiconducteurs Specifiques filed Critical Thomson SCF Semiconducteurs Specifiques
Publication of DE68912963D1 publication Critical patent/DE68912963D1/de
Application granted granted Critical
Publication of DE68912963T2 publication Critical patent/DE68912963T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12034—Varactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE68912963T 1988-05-10 1989-04-28 Integrierter Hochfrequenzschaltkreis des Planartyps mit mindestens einem Mesa Bauelement, und sein Herstellungsverfahren. Expired - Fee Related DE68912963T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8806278A FR2631488B1 (fr) 1988-05-10 1988-05-10 Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE68912963D1 true DE68912963D1 (de) 1994-03-24
DE68912963T2 DE68912963T2 (de) 1994-07-07

Family

ID=9366167

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912963T Expired - Fee Related DE68912963T2 (de) 1988-05-10 1989-04-28 Integrierter Hochfrequenzschaltkreis des Planartyps mit mindestens einem Mesa Bauelement, und sein Herstellungsverfahren.

Country Status (4)

Country Link
US (2) US4982269A (de)
EP (1) EP0342094B1 (de)
DE (1) DE68912963T2 (de)
FR (1) FR2631488B1 (de)

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JPH03296247A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5217566A (en) * 1991-06-06 1993-06-08 Lsi Logic Corporation Densifying and polishing glass layers
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5514616A (en) * 1991-08-26 1996-05-07 Lsi Logic Corporation Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
FR2695761B1 (fr) * 1992-09-11 1994-12-30 Slimane Loualiche Procédé de fabrication de dispositifs électro-optiques à ruban, notamment de lasers, et dispositifs ainsi obtenus.
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
US5457068A (en) * 1992-11-30 1995-10-10 Texas Instruments Incorporated Monolithic integration of microwave silicon devices and low loss transmission lines
US5376574A (en) * 1993-07-30 1994-12-27 Texas Instruments Incorporated Capped modular microwave integrated circuit and method of making same
DE19530525A1 (de) * 1995-08-19 1997-02-20 Daimler Benz Ag Schaltkreis mit monolithisch integrierter PIN-/Schottky-Diodenanordnung
DE19535894A1 (de) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
EP0963602B1 (de) * 1996-03-22 2007-01-03 The Whitaker Corporation Integrierte mikrowellenschaltungen und verfahren zur herstellung derselben
US6114716A (en) * 1996-03-22 2000-09-05 The Whitaker Corporation Heterolithic microwave integrated circuits
US6014064A (en) * 1996-07-28 2000-01-11 The Whitaker Corporation Heterolithic voltage controlled oscillator
DE69723044T2 (de) 1997-01-31 2004-05-06 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Herstellung von einer Randstruktur um ein integriertes elektronisches Bauelement zu versiegeln, sowie ein entsprechendes Bauelement
US6150197A (en) * 1997-04-25 2000-11-21 The Whitaker Corp. Method of fabricating heterolithic microwave integrated circuits
JPH1140797A (ja) * 1997-05-19 1999-02-12 Matsushita Electron Corp 半導体装置及びその製造方法
US6191048B1 (en) 1997-12-31 2001-02-20 The Whitaker Corporation Process for manufacturing composite glass/Si substrates for microwave integrated circuit fabrication
US6379785B1 (en) 1997-12-31 2002-04-30 Tyco Electronic Corp Glass-coated substrates for high frequency applications
JP2001230315A (ja) 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE10127952A1 (de) * 2001-06-08 2002-12-19 Infineon Technologies Ag Laterale PIN-Diode und Verfahren zur Herstellung derselben
US20030085416A1 (en) * 2001-11-08 2003-05-08 Tyco Electronics Corporation Monolithically integrated pin diode and schottky diode circuit and method of fabricating same
FR2879841B1 (fr) * 2004-12-22 2008-10-24 Thales Sa Laser semiconducteur de puissance a faibles divergence et astigmatisme
JP2009246157A (ja) * 2008-03-31 2009-10-22 Toshiba Corp 高周波帯半導体装置
FR2969813B1 (fr) * 2010-12-27 2013-11-08 Soitec Silicon On Insulator Procédé de fabrication d'un dispositif semi-conducteur
FR2969815B1 (fr) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech Procédé de fabrication d'un dispositif semi-conducteur
CN106783601A (zh) * 2016-12-20 2017-05-31 西安电子科技大学 一种Si‑Ge‑Si异质Ge基固态等离子体PiN二极管的制备方法及其器件
US11158575B2 (en) * 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices

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Also Published As

Publication number Publication date
US5102822A (en) 1992-04-07
FR2631488A1 (fr) 1989-11-17
US4982269A (en) 1991-01-01
EP0342094B1 (de) 1994-02-09
FR2631488B1 (fr) 1990-07-27
DE68912963T2 (de) 1994-07-07
EP0342094A1 (de) 1989-11-15

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