KR920001847A - 기판바이어스 발생회로 - Google Patents

기판바이어스 발생회로 Download PDF

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Publication number
KR920001847A
KR920001847A KR1019910009908A KR910009908A KR920001847A KR 920001847 A KR920001847 A KR 920001847A KR 1019910009908 A KR1019910009908 A KR 1019910009908A KR 910009908 A KR910009908 A KR 910009908A KR 920001847 A KR920001847 A KR 920001847A
Authority
KR
South Korea
Prior art keywords
substrate bias
circuit
generation circuit
bias generation
rectifying
Prior art date
Application number
KR1019910009908A
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English (en)
Other versions
KR100213304B1 (ko
Inventor
요이찌 마쓰무라
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920001847A publication Critical patent/KR920001847A/ko
Application granted granted Critical
Publication of KR100213304B1 publication Critical patent/KR100213304B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

기판바이어스 발생회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 기판바이어스 발생회로의 일예의 요부회로도.
제2도는 본원 발명의 기판바이어스 발생회로의 일예의 블록도.
제3도는 그 일예의 정류용 pMOS 트랜지스터 부분의 모식적 칩의 단면도.

Claims (1)

  1. 기판전위 검출회로와 오실레이터회로와 펌핑회로를 최소한 구비한 기판바이어스 발생회로에 있어서, 상기 펌핑회로는 n웰에 형성된 정류용 p채널 MOS 트랜지스터를 가지고, 상기 n웰은 상기 정류용 p채널 MOS 트랜지스터 작동시에 마이너스 전위를 유지되는 것을 특징으로 하는 기판바이어스 발생회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009908A 1990-06-25 1991-06-15 기판바이어스발생회로 KR100213304B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2164289A JP2805991B2 (ja) 1990-06-25 1990-06-25 基板バイアス発生回路
JP90-164,289 1990-06-25

Publications (2)

Publication Number Publication Date
KR920001847A true KR920001847A (ko) 1992-01-30
KR100213304B1 KR100213304B1 (ko) 1999-08-02

Family

ID=15790279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009908A KR100213304B1 (ko) 1990-06-25 1991-06-15 기판바이어스발생회로

Country Status (5)

Country Link
US (1) US5172013A (ko)
EP (1) EP0463545B1 (ko)
JP (1) JP2805991B2 (ko)
KR (1) KR100213304B1 (ko)
DE (1) DE69127515T2 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057149A (ja) * 1991-06-27 1993-01-14 Fujitsu Ltd 出力回路
KR940003301B1 (ko) * 1991-12-20 1994-04-20 주식회사 금성사 Ce버스 심볼 엔코딩 처리회로
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
KR100285974B1 (ko) * 1992-11-18 2001-04-16 사와무라 시코 승압전원 발생회로
KR960003219B1 (ko) * 1993-04-16 1996-03-07 삼성전자주식회사 반도체 집적회로의 중간전위 발생회로
JP2560983B2 (ja) * 1993-06-30 1996-12-04 日本電気株式会社 半導体装置
US5386151A (en) * 1993-08-11 1995-01-31 Advanced Micro Devices, Inc. Low voltage charge pumps using p-well driven MOS capacitors
DE69408665T2 (de) * 1994-08-12 1998-10-15 Cons Ric Microelettronica Spannungserhöher vom Ladungspumpentype
EP0830686B1 (en) * 1995-06-07 2003-09-10 Intel Corporation Negative voltage switching circuit
JPH09293789A (ja) * 1996-04-24 1997-11-11 Mitsubishi Electric Corp 半導体集積回路
US6064250A (en) 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
EP1028363B1 (en) * 1996-07-29 2003-02-12 Townsend and Townsend and Crew LLP Charge pump for a semiconductor substrate
JP4109340B2 (ja) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ 半導体集積回路装置
US6285243B1 (en) * 2000-02-23 2001-09-04 Micron Technology, Inc. High-voltage charge pump circuit
US6801076B1 (en) 2000-04-28 2004-10-05 Micron Technology, Inc. High output high efficiency low voltage charge pump
US6833752B2 (en) * 2000-04-28 2004-12-21 Micron Technology, Inc. High output high efficiency low voltage charge pump
US6404270B1 (en) * 2000-11-28 2002-06-11 Cypress Semiconductor Corp. Switched well technique for biasing cross-coupled switches or drivers
US6646493B2 (en) * 2001-08-14 2003-11-11 Micron Technology, Inc. Voltage charge pump with circuit to prevent pass device latch-up
US6577552B2 (en) 2001-08-30 2003-06-10 Micron Technology, Inc. Apparatus and method for generating an oscillating signal
DE60207190D1 (de) * 2002-03-29 2005-12-15 St Microelectronics Srl Basisstufe für Ladungspumpeschaltung
JP2006101671A (ja) * 2004-09-30 2006-04-13 Fujitsu Ltd 整流回路
US7855592B1 (en) 2006-09-28 2010-12-21 Cypress Semiconductor Corporation Charge pump
US10352986B2 (en) 2016-05-25 2019-07-16 United Microelectronics Corp. Method and apparatus for controlling voltage of doped well in substrate
CN115864830B (zh) * 2023-02-15 2023-06-02 深圳通锐微电子技术有限公司 负压除二转换电路和设备终端

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4485433A (en) * 1982-12-22 1984-11-27 Ncr Corporation Integrated circuit dual polarity high voltage multiplier for extended operating temperature range
NL8402764A (nl) * 1984-09-11 1986-04-01 Philips Nv Schakeling voor het opwekken van een substraatvoorspanning.
US4670670A (en) * 1984-10-05 1987-06-02 American Telephone And Telegraph Company At&T Bell Laboratories Circuit arrangement for controlling threshold voltages in CMOS circuits
JPS6266656A (ja) * 1985-09-19 1987-03-26 Toshiba Corp 基板電位生成回路
DE8714849U1 (ko) * 1986-12-23 1987-12-23 Jenoptik Jena Gmbh, Ddr 6900 Jena, Dd
KR890005159B1 (ko) * 1987-04-30 1989-12-14 삼성전자 주식회사 백 바이어스 전압 발생기
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
IT1221261B (it) * 1988-06-28 1990-06-27 Sgs Thomson Microelectronics Moltiplicatore di tensione omos
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路
JP2780365B2 (ja) * 1989-08-14 1998-07-30 日本電気株式会社 基板電位発生回路

Also Published As

Publication number Publication date
EP0463545B1 (en) 1997-09-03
KR100213304B1 (ko) 1999-08-02
EP0463545A3 (en) 1993-10-27
EP0463545A2 (en) 1992-01-02
JPH0462868A (ja) 1992-02-27
DE69127515D1 (de) 1997-10-09
US5172013A (en) 1992-12-15
DE69127515T2 (de) 1998-04-02
JP2805991B2 (ja) 1998-09-30

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