KR910019310A - 기준전압 발생회로 - Google Patents

기준전압 발생회로 Download PDF

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Publication number
KR910019310A
KR910019310A KR1019910004007A KR910004007A KR910019310A KR 910019310 A KR910019310 A KR 910019310A KR 1019910004007 A KR1019910004007 A KR 1019910004007A KR 910004007 A KR910004007 A KR 910004007A KR 910019310 A KR910019310 A KR 910019310A
Authority
KR
South Korea
Prior art keywords
reference voltage
circuit
mos transistor
generating
voltage generator
Prior art date
Application number
KR1019910004007A
Other languages
English (en)
Other versions
KR0126911B1 (ko
Inventor
마사루 우에스기
쓰네오 다까노
시즈오 죠
Original Assignee
고스기 노부미쓰
오끼덴끼고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고스기 노부미쓰, 오끼덴끼고오교 가부시끼가이샤 filed Critical 고스기 노부미쓰
Publication of KR910019310A publication Critical patent/KR910019310A/ko
Application granted granted Critical
Publication of KR0126911B1 publication Critical patent/KR0126911B1/ko

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음

Description

기준전압 발생회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 실시예를 나타내는 기준전압 발생회로를 갖는 내부 전압발생회로의 구성 블록도, 제 2 도는 종래의 기준 전압 발생회로를 갖는 내부전압 발생회로의 구성 블록도, 제 3 도는 제 2 도의 기준전압 발생회로의 회로도.

Claims (2)

  1. CMOS 반도체 집적회로에 있어서의 기준전압 발생회로에 있어서, 제 1 의 극성을 갖는 MOS 트랜지스터에 의하여 제 1 의 기준전압을 발생하는 제 1 의 기준전압회로와, 제 2 의 극성을 갖는 MOS 트랜지스터에 의하여 제 2 의 기준전압을 발생하는 제 2 의 기준전압회로와, 상기 제 1 과 제 2 의 기준전압을 비교하고 그 비교결과에 따른 출력을 상기 제 1 의 기준전압회로로 피드백하여 제 3 의 기준전압을 출력시키는 비교수단을, 갖춘 것을 특징으로 하는 기준 전압 발생회로.
  2. 제 1 항에 있어서, 상기 제 1 및 제 2 의 기준전압회로는, 드레인과 게이트를 공통접속한 MOS 트랜지스터에 대해서 정전류를 공급하는 회로구성으로 하고, 상기 비교수단은, 차동증폭기로 구성됨을 특징으로 하는 기준전압 발생회로.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019910004007A 1990-04-13 1991-03-13 기준전압 발생회로 및 발생방법 KR0126911B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2098483A JPH03296118A (ja) 1990-04-13 1990-04-13 基準電圧発生回路
JP2-98483 1990-04-13

Publications (2)

Publication Number Publication Date
KR910019310A true KR910019310A (ko) 1991-11-30
KR0126911B1 KR0126911B1 (ko) 1998-10-01

Family

ID=14220898

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004007A KR0126911B1 (ko) 1990-04-13 1991-03-13 기준전압 발생회로 및 발생방법

Country Status (5)

Country Link
US (1) US5103158A (ko)
EP (1) EP0451870B1 (ko)
JP (1) JPH03296118A (ko)
KR (1) KR0126911B1 (ko)
DE (1) DE69111869T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950008453B1 (ko) * 1992-03-31 1995-07-31 삼성전자주식회사 내부전원전압 발생회로
EP0576774B1 (en) * 1992-06-30 1999-09-15 STMicroelectronics S.r.l. Voltage regulator for memory devices
JP2851767B2 (ja) * 1992-10-15 1999-01-27 三菱電機株式会社 電圧供給回路および内部降圧回路
IT1272933B (it) * 1994-01-28 1997-07-01 Fujitsu Ltd Dispositivo a circuito integrato di semiconduttore
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
JPH10133754A (ja) * 1996-10-28 1998-05-22 Fujitsu Ltd レギュレータ回路及び半導体集積回路装置
DE19812299A1 (de) * 1998-03-20 1999-09-30 Micronas Intermetall Gmbh Gleichspannungswandler
US6943618B1 (en) * 1999-05-13 2005-09-13 Honeywell International Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
US6583661B1 (en) 2000-11-03 2003-06-24 Honeywell Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
JP3561716B1 (ja) * 2003-05-30 2004-09-02 沖電気工業株式会社 定電圧回路
US7420397B2 (en) * 2004-06-02 2008-09-02 Stmicroelectronics Sa Low-consumption inhibit circuit with hysteresis
JP2009048405A (ja) * 2007-08-20 2009-03-05 Funai Electric Co Ltd 通信装置
JP5537272B2 (ja) * 2010-06-07 2014-07-02 ローム株式会社 負荷駆動回路装置及びこれを用いた電気機器
JP7325352B2 (ja) * 2020-02-07 2023-08-14 エイブリック株式会社 基準電圧回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4357571A (en) * 1978-09-29 1982-11-02 Siemens Aktiengesellschaft FET Module with reference source chargeable memory gate
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
JP2525346B2 (ja) * 1983-10-27 1996-08-21 富士通株式会社 定電流源回路を有する差動増幅回路
JPH0668706B2 (ja) * 1984-08-10 1994-08-31 日本電気株式会社 基準電圧発生回路
US4588941A (en) * 1985-02-11 1986-05-13 At&T Bell Laboratories Cascode CMOS bandgap reference
US4837459A (en) * 1987-07-13 1989-06-06 International Business Machines Corp. CMOS reference voltage generation
US4868482A (en) * 1987-10-05 1989-09-19 Western Digital Corporation CMOS integrated circuit having precision resistor elements

Also Published As

Publication number Publication date
DE69111869T2 (de) 1996-05-02
EP0451870A3 (en) 1992-04-01
US5103158A (en) 1992-04-07
JPH03296118A (ja) 1991-12-26
EP0451870A2 (en) 1991-10-16
EP0451870B1 (en) 1995-08-09
DE69111869D1 (de) 1995-09-14
KR0126911B1 (ko) 1998-10-01

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