IT1272933B - Dispositivo a circuito integrato di semiconduttore - Google Patents

Dispositivo a circuito integrato di semiconduttore

Info

Publication number
IT1272933B
IT1272933B ITMI950116A ITMI950116A IT1272933B IT 1272933 B IT1272933 B IT 1272933B IT MI950116 A ITMI950116 A IT MI950116A IT MI950116 A ITMI950116 A IT MI950116A IT 1272933 B IT1272933 B IT 1272933B
Authority
IT
Italy
Prior art keywords
voltage
generating
semiconductor integrated
integrated circuit
circuit device
Prior art date
Application number
ITMI950116A
Other languages
English (en)
Inventor
Yamada Toyonobu
Endo Tetsuya
Suzuki Takaaki
Mochizuki Hirohito
Taguchi Masao
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP00854294A external-priority patent/JP3326949B2/ja
Priority claimed from JP08669794A external-priority patent/JP3405477B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of ITMI950116A0 publication Critical patent/ITMI950116A0/it
Publication of ITMI950116A1 publication Critical patent/ITMI950116A1/it
Application granted granted Critical
Publication of IT1272933B publication Critical patent/IT1272933B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
ITMI950116A 1994-01-28 1995-01-24 Dispositivo a circuito integrato di semiconduttore IT1272933B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP00854294A JP3326949B2 (ja) 1994-01-28 1994-01-28 半導体集積回路
JP08669794A JP3405477B2 (ja) 1994-04-25 1994-04-25 半導体装置

Publications (3)

Publication Number Publication Date
ITMI950116A0 ITMI950116A0 (it) 1995-01-24
ITMI950116A1 ITMI950116A1 (it) 1996-07-24
IT1272933B true IT1272933B (it) 1997-07-01

Family

ID=26343081

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI950116A IT1272933B (it) 1994-01-28 1995-01-24 Dispositivo a circuito integrato di semiconduttore

Country Status (3)

Country Link
US (2) US5757226A (it)
KR (1) KR0175109B1 (it)
IT (1) IT1272933B (it)

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* Cited by examiner, † Cited by third party
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JP4027438B2 (ja) * 1995-05-25 2007-12-26 三菱電機株式会社 半導体装置
TW383491B (en) * 1997-02-28 2000-03-01 Toshiba Co Ltd Regulator for regulating power voltage and semiconductor integrated circuit including the same
US6148220A (en) 1997-04-25 2000-11-14 Triquint Semiconductor, Inc. Battery life extending technique for mobile wireless applications
JPH1166890A (ja) * 1997-08-12 1999-03-09 Mitsubishi Electric Corp 半導体集積回路装置
US5886570A (en) * 1997-10-22 1999-03-23 Analog Devices Inc Inverter circuit biased to limit the maximum drive current to a following stage and method
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
US6166590A (en) * 1998-05-21 2000-12-26 The University Of Rochester Current mirror and/or divider circuits with dynamic current control which are useful in applications for providing series of reference currents, subtraction, summation and comparison
JP3561158B2 (ja) * 1998-09-21 2004-09-02 松下電器産業株式会社 内部降圧電源回路
JP3423957B2 (ja) * 1999-11-25 2003-07-07 Ｎｅｃエレクトロニクス株式会社 降圧回路
JP3999916B2 (ja) * 1999-12-14 2007-10-31 東芝マイクロエレクトロニクス株式会社 トランジスタのバイアス回路
US7095273B2 (en) * 2001-04-05 2006-08-22 Fujitsu Limited Voltage generator circuit and method for controlling thereof
JP2003005850A (ja) * 2001-06-26 2003-01-08 Sanyo Electric Co Ltd 基準電位発生回路
DE10132217A1 (de) * 2001-07-03 2003-01-23 Philips Corp Intellectual Pty Anordnung zur Kehrwertbildung eines Eingangsstroms
US6624702B1 (en) 2002-04-05 2003-09-23 Rf Micro Devices, Inc. Automatic Vcc control for optimum power amplifier efficiency
US7010284B2 (en) 2002-11-06 2006-03-07 Triquint Semiconductor, Inc. Wireless communications device including power detector circuit coupled to sample signal at interior node of amplifier
US20040070454A1 (en) * 2002-10-15 2004-04-15 Triquint Semiconductor, Inc. Continuous bias circuit and method for an amplifier
US20040072554A1 (en) * 2002-10-15 2004-04-15 Triquint Semiconductor, Inc. Automatic-bias amplifier circuit
JP4109161B2 (ja) * 2003-07-24 2008-07-02 株式会社東芝 半導体装置
US7177370B2 (en) * 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
CN100495057C (zh) * 2005-12-22 2009-06-03 中芯国际集成电路制造(上海)有限公司 利用阵列与解码器进行器件表征的方法与系统
US20070248330A1 (en) 2006-04-06 2007-10-25 Pillman Bruce H Varying camera self-determination based on subject motion
US7808308B2 (en) * 2009-02-17 2010-10-05 United Microelectronics Corp. Voltage generating apparatus
JP2012019625A (ja) * 2010-07-08 2012-01-26 Ricoh Co Ltd 駆動回路、該駆動回路を備えた半導体装置、これらを用いたスイッチングレギュレータおよび電子機器
US9030855B2 (en) * 2011-07-14 2015-05-12 Macronix International Co., Ltd. Semiconductor device, start-up circuit having first and second circuits and a single voltage output terminal coupled to a second node between the semiconductor unit and the first circuit, and operating method for the same
KR20130098041A (ko) 2012-02-27 2013-09-04 삼성전자주식회사 낮은 외부 전원 전압에 적합한 전압 발생부들
US9019005B2 (en) * 2012-06-28 2015-04-28 Infineon Technologies Ag Voltage regulating circuit
US9219473B2 (en) 2013-03-15 2015-12-22 International Business Machines Corporation Overvoltage protection circuit
US8766675B1 (en) * 2013-03-15 2014-07-01 International Business Machines Corporation Overvoltage protection circuit
US20140354325A1 (en) * 2013-05-28 2014-12-04 United Microelectronics Corp. Semiconductor layout structure and testing method thereof
US11392158B2 (en) * 2020-11-02 2022-07-19 Texas Instruments Incorporated Low threshold voltage transistor bias circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064448A (en) * 1976-11-22 1977-12-20 Fairchild Camera And Instrument Corporation Band gap voltage regulator circuit including a merged reference voltage source and error amplifier
US4514749A (en) * 1983-01-18 1985-04-30 At&T Bell Laboratories VLSI Chip with ground shielding
JPS63265524A (ja) * 1987-04-21 1988-11-02 Nec Corp 電源回路
KR920005863B1 (ko) * 1988-08-12 1992-07-23 산요덴끼 가부시끼가이샤 반도체 집적회로
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
JPH03296118A (ja) * 1990-04-13 1991-12-26 Oki Micro Design Miyazaki:Kk 基準電圧発生回路
JPH0430470A (ja) * 1990-05-25 1992-02-03 Nec Corp 半導体集積回路
JP2642512B2 (ja) * 1990-11-16 1997-08-20 シャープ株式会社 半導体集積回路
US5180988A (en) * 1991-12-31 1993-01-19 Intel Corporation Resistorless trim amplifier using MOS devices for feedback elements
US5352973A (en) * 1993-01-13 1994-10-04 Analog Devices, Inc. Temperature compensation bandgap voltage reference and method
JP2833522B2 (ja) * 1995-04-27 1998-12-09 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
US5757226A (en) 1998-05-26
ITMI950116A1 (it) 1996-07-24
ITMI950116A0 (it) 1995-01-24
KR0175109B1 (ko) 1999-02-01
KR950024339A (ko) 1995-08-21
US5986293A (en) 1999-11-16

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