DE69111869D1 - Referenzspannungserzeugungsschaltung. - Google Patents

Referenzspannungserzeugungsschaltung.

Info

Publication number
DE69111869D1
DE69111869D1 DE69111869T DE69111869T DE69111869D1 DE 69111869 D1 DE69111869 D1 DE 69111869D1 DE 69111869 T DE69111869 T DE 69111869T DE 69111869 T DE69111869 T DE 69111869T DE 69111869 D1 DE69111869 D1 DE 69111869D1
Authority
DE
Germany
Prior art keywords
reference voltage
generation circuit
voltage generation
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69111869T
Other languages
English (en)
Other versions
DE69111869T2 (de
Inventor
Shizuo Cho
Masaru Uesugi
Tsuneo Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Oki Micro Design Miyazaki Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Oki Micro Design Miyazaki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd, Oki Micro Design Miyazaki Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE69111869D1 publication Critical patent/DE69111869D1/de
Publication of DE69111869T2 publication Critical patent/DE69111869T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE69111869T 1990-04-13 1991-04-12 Referenzspannungserzeugungsschaltung. Expired - Lifetime DE69111869T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2098483A JPH03296118A (ja) 1990-04-13 1990-04-13 基準電圧発生回路

Publications (2)

Publication Number Publication Date
DE69111869D1 true DE69111869D1 (de) 1995-09-14
DE69111869T2 DE69111869T2 (de) 1996-05-02

Family

ID=14220898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111869T Expired - Lifetime DE69111869T2 (de) 1990-04-13 1991-04-12 Referenzspannungserzeugungsschaltung.

Country Status (5)

Country Link
US (1) US5103158A (de)
EP (1) EP0451870B1 (de)
JP (1) JPH03296118A (de)
KR (1) KR0126911B1 (de)
DE (1) DE69111869T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950008453B1 (ko) * 1992-03-31 1995-07-31 삼성전자주식회사 내부전원전압 발생회로
EP0576774B1 (de) * 1992-06-30 1999-09-15 STMicroelectronics S.r.l. Spannungsregler für Speichergeräte
JP2851767B2 (ja) * 1992-10-15 1999-01-27 三菱電機株式会社 電圧供給回路および内部降圧回路
IT1272933B (it) * 1994-01-28 1997-07-01 Fujitsu Ltd Dispositivo a circuito integrato di semiconduttore
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
JPH10133754A (ja) * 1996-10-28 1998-05-22 Fujitsu Ltd レギュレータ回路及び半導体集積回路装置
DE19812299A1 (de) * 1998-03-20 1999-09-30 Micronas Intermetall Gmbh Gleichspannungswandler
US6943618B1 (en) * 1999-05-13 2005-09-13 Honeywell International Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
US6583661B1 (en) 2000-11-03 2003-06-24 Honeywell Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
JP3561716B1 (ja) * 2003-05-30 2004-09-02 沖電気工業株式会社 定電圧回路
US7420397B2 (en) * 2004-06-02 2008-09-02 Stmicroelectronics Sa Low-consumption inhibit circuit with hysteresis
JP2009048405A (ja) * 2007-08-20 2009-03-05 Funai Electric Co Ltd 通信装置
JP5537272B2 (ja) * 2010-06-07 2014-07-02 ローム株式会社 負荷駆動回路装置及びこれを用いた電気機器
JP7325352B2 (ja) * 2020-02-07 2023-08-14 エイブリック株式会社 基準電圧回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4357571A (en) * 1978-09-29 1982-11-02 Siemens Aktiengesellschaft FET Module with reference source chargeable memory gate
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
JP2525346B2 (ja) * 1983-10-27 1996-08-21 富士通株式会社 定電流源回路を有する差動増幅回路
JPH0668706B2 (ja) * 1984-08-10 1994-08-31 日本電気株式会社 基準電圧発生回路
US4588941A (en) * 1985-02-11 1986-05-13 At&T Bell Laboratories Cascode CMOS bandgap reference
US4837459A (en) * 1987-07-13 1989-06-06 International Business Machines Corp. CMOS reference voltage generation
US4868482A (en) * 1987-10-05 1989-09-19 Western Digital Corporation CMOS integrated circuit having precision resistor elements

Also Published As

Publication number Publication date
DE69111869T2 (de) 1996-05-02
EP0451870A3 (en) 1992-04-01
US5103158A (en) 1992-04-07
JPH03296118A (ja) 1991-12-26
EP0451870A2 (de) 1991-10-16
KR910019310A (ko) 1991-11-30
EP0451870B1 (de) 1995-08-09
KR0126911B1 (ko) 1998-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition