DE3872762D1 - Referenzspannungsgeneratorschaltung. - Google Patents

Referenzspannungsgeneratorschaltung.

Info

Publication number
DE3872762D1
DE3872762D1 DE8888107648T DE3872762T DE3872762D1 DE 3872762 D1 DE3872762 D1 DE 3872762D1 DE 8888107648 T DE8888107648 T DE 8888107648T DE 3872762 T DE3872762 T DE 3872762T DE 3872762 D1 DE3872762 D1 DE 3872762D1
Authority
DE
Germany
Prior art keywords
reference voltage
voltage generator
generator circuit
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888107648T
Other languages
English (en)
Other versions
DE3872762T2 (de
Inventor
Masakazu Kiryu
Hiroyuki Koinuma
Kiminobu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3872762D1 publication Critical patent/DE3872762D1/de
Publication of DE3872762T2 publication Critical patent/DE3872762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
DE8888107648T 1987-05-15 1988-05-11 Referenzspannungsgeneratorschaltung. Expired - Lifetime DE3872762T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62117113A JPH0679263B2 (ja) 1987-05-15 1987-05-15 基準電位発生回路

Publications (2)

Publication Number Publication Date
DE3872762D1 true DE3872762D1 (de) 1992-08-20
DE3872762T2 DE3872762T2 (de) 1993-02-25

Family

ID=14703742

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888107648T Expired - Lifetime DE3872762T2 (de) 1987-05-15 1988-05-11 Referenzspannungsgeneratorschaltung.

Country Status (5)

Country Link
US (1) US4833342A (de)
EP (1) EP0291062B1 (de)
JP (1) JPH0679263B2 (de)
KR (1) KR910002032B1 (de)
DE (1) DE3872762T2 (de)

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JPH0690655B2 (ja) * 1987-12-18 1994-11-14 株式会社東芝 中間電位発生回路
JPH0673092B2 (ja) * 1988-04-12 1994-09-14 日本電気株式会社 定電圧発生回路
JP2751422B2 (ja) * 1988-06-27 1998-05-18 日本電気株式会社 半導体装置
JP2736789B2 (ja) * 1988-09-24 1998-04-02 三菱電機株式会社 ドライバ回路装置
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
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US5261913A (en) * 1989-07-26 1993-11-16 J.B.S. Limited Company Device for straightening, securing, compressing and elongating the spinal column
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US5029283A (en) * 1990-03-28 1991-07-02 Ncr Corporation Low current driver for gate array
US5010385A (en) * 1990-03-30 1991-04-23 The United States Of America As Represented By The Secretary Of The Navy Resistive element using depletion-mode MOSFET's
US5146151A (en) * 1990-06-08 1992-09-08 United Technologies Corporation Floating voltage reference having dual output voltage
JP2642512B2 (ja) * 1990-11-16 1997-08-20 シャープ株式会社 半導体集積回路
KR920010633A (ko) * 1990-11-30 1992-06-26 김광호 반도체 메모리 장치의 기준전압 발생회로
US5233289A (en) * 1991-04-23 1993-08-03 Harris Corporation Voltage divider and use as bias network for stacked transistors
KR930008661B1 (ko) * 1991-05-24 1993-09-11 삼성전자 주식회사 반도체메모리장치의 데이타입력버퍼
JPH0555881A (ja) * 1991-08-27 1993-03-05 Toshiba Corp 遅延回路
US5229662A (en) * 1991-09-25 1993-07-20 National Semiconductor Corporation Logic circuit capable of operating with any one of a plurality of alternative voltage supply levels
US5281906A (en) * 1991-10-29 1994-01-25 Lattice Semiconductor Corporation Tunable voltage reference circuit to provide an output voltage with a predetermined temperature coefficient independent of variation in supply voltage
US5276361A (en) * 1991-11-25 1994-01-04 Ncr Corporation TTL compatible input buffer
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
SG44661A1 (en) * 1992-02-11 1997-12-19 Philips Electronics Nv Current divider and intergrated circuit comprising a plurality of current dividers
US5175490A (en) * 1992-04-03 1992-12-29 Hewlett Packard Company Reference voltage source
US5321319A (en) * 1992-06-08 1994-06-14 Advanced Micro Devices, Inc. High speed CMOS bus driver circuit that provides minimum output signal oscillation
JPH0637337A (ja) * 1992-07-16 1994-02-10 Kawasaki Steel Corp 半導体集積回路
JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
EP0647019B1 (de) * 1993-09-30 1998-12-30 STMicroelectronics S.r.l. Schaltung zur Begrenzung des über einen Leistungs MOS an eine Last abgegebenen Maximalstroms
US5955889A (en) 1994-05-20 1999-09-21 Fujitsu Limited Electronic circuit apparatus for transmitting signals through a bus and semiconductor device for generating a predetermined stable voltage
EP0704901B1 (de) * 1994-09-30 1999-12-15 STMicroelectronics S.r.l. Integrierte Schaltung mit Toleranz bei wichtigen Herstellungsfehlern
JPH09139085A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体電位供給装置およびこれを用いた半導体記憶装置
US5859558A (en) * 1997-04-11 1999-01-12 Raytheon Company Low voltage analog front end
TW457688B (en) * 1999-12-20 2001-10-01 Winbond Electronics Corp Input/output port with high voltage tolerance
US6617836B1 (en) * 2002-05-08 2003-09-09 National Semiconductor Corporation CMOS sub-bandgap reference with an operating supply voltage less than the bandgap
US6897702B2 (en) * 2002-05-30 2005-05-24 Sun Microsystems, Inc. Process variation compensated high voltage decoupling capacitor biasing circuit with no DC current
KR100594227B1 (ko) * 2003-06-19 2006-07-03 삼성전자주식회사 피크 전류가 감소된 인버터를 가지는 저전력 저잡음 비교기
US7411433B2 (en) * 2003-12-18 2008-08-12 Stmicroelectronics, Inc. Reset ramp control
US20050280447A1 (en) * 2004-06-16 2005-12-22 Curtis Susan A Low voltage selection control circuit for dual power supply systems
US7621463B2 (en) * 2005-01-12 2009-11-24 Flodesign, Inc. Fluid nozzle system using self-propelling toroidal vortices for long-range jet impact
US7362084B2 (en) 2005-03-14 2008-04-22 Silicon Storage Technology, Inc. Fast voltage regulators for charge pumps
JP2006311731A (ja) * 2005-04-28 2006-11-09 Seiko Instruments Inc 電子回路
US20080284489A1 (en) * 2007-05-14 2008-11-20 Mediatek Singapore Pte Ltd Transconductor and mixer with high linearity
US7642853B2 (en) * 2007-08-23 2010-01-05 Qualcomm, Incorporated High-swing operational amplifier output stage using adaptive biasing
US20100194465A1 (en) * 2009-02-02 2010-08-05 Ali Salih Temperature compensated current source and method therefor
US7808308B2 (en) * 2009-02-17 2010-10-05 United Microelectronics Corp. Voltage generating apparatus
FR2943866B1 (fr) * 2009-03-24 2011-04-01 Dolphin Integration Sa Circuit d'alimentation pour mode de sommeil
JP5337613B2 (ja) * 2009-07-28 2013-11-06 株式会社半導体エネルギー研究所 レギュレータ回路、および非接触データキャリア
US8924765B2 (en) * 2011-07-03 2014-12-30 Ambiq Micro, Inc. Method and apparatus for low jitter distributed clock calibration
US20130127515A1 (en) * 2011-11-22 2013-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage dividing circuit
RU2592719C2 (ru) * 2012-03-16 2016-07-27 Интел Корпорейшн Генератор опорного напряжения с низким импедансом
US9110486B2 (en) * 2012-09-06 2015-08-18 Freescale Semiconductor, Inc. Bandgap reference circuit with startup circuit and method of operation
EP2779456B1 (de) * 2013-03-15 2018-08-29 Dialog Semiconductor B.V. Verfahren zur Verringerung des Übersteuerungsbedarfs bei MOS-Schaltung und Logikschaltung
CN104660248B (zh) * 2013-11-19 2018-06-01 中芯国际集成电路制造(上海)有限公司 上拉电阻电路
US9436196B2 (en) * 2014-08-20 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage regulator and method
US9813056B2 (en) * 2015-09-21 2017-11-07 Analog Devices Global Active device divider circuit with adjustable IQ
CN106959716B (zh) 2016-01-12 2019-08-27 中芯国际集成电路制造(上海)有限公司 参考电压发生装置
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置
US11650656B1 (en) 2022-04-20 2023-05-16 Hong Kong Applied Science and Technology Research Institute Company Limited Low-power voltage detector for low-voltage CMOS processes

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US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
JPS5434044A (en) * 1977-08-19 1979-03-13 Seiko Instr & Electronics Ltd Constant voltage circuit
US4224539A (en) * 1978-09-05 1980-09-23 Motorola, Inc. FET Voltage level detecting circuit
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4636664A (en) * 1983-01-10 1987-01-13 Ncr Corporation Current sinking responsive MOS sense amplifier
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路
US4614882A (en) * 1983-11-22 1986-09-30 Digital Equipment Corporation Bus transceiver including compensation circuit for variations in electrical characteristics of components
JPH0679262B2 (ja) * 1984-02-28 1994-10-05 シャープ株式会社 参照電圧回路
JPH0756613B2 (ja) * 1984-09-10 1995-06-14 シャープ株式会社 基準電圧発生回路
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
JPS6299817A (ja) * 1985-10-25 1987-05-09 Seiko Instr & Electronics Ltd 定電圧回路
US4686451A (en) * 1986-10-15 1987-08-11 Triquint Semiconductor, Inc. GaAs voltage reference generator

Also Published As

Publication number Publication date
EP0291062B1 (de) 1992-07-15
DE3872762T2 (de) 1993-02-25
US4833342A (en) 1989-05-23
JPH0679263B2 (ja) 1994-10-05
JPS63282815A (ja) 1988-11-18
EP0291062A1 (de) 1988-11-17
KR880014568A (ko) 1988-12-24
KR910002032B1 (ko) 1991-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T