DE3872275D1 - Cmos-referenzspannungsgeneratoreinrichtung. - Google Patents

Cmos-referenzspannungsgeneratoreinrichtung.

Info

Publication number
DE3872275D1
DE3872275D1 DE8888101850T DE3872275T DE3872275D1 DE 3872275 D1 DE3872275 D1 DE 3872275D1 DE 8888101850 T DE8888101850 T DE 8888101850T DE 3872275 T DE3872275 T DE 3872275T DE 3872275 D1 DE3872275 D1 DE 3872275D1
Authority
DE
Germany
Prior art keywords
reference voltage
voltage generator
generator device
cmos reference
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888101850T
Other languages
English (en)
Other versions
DE3872275T2 (de
Inventor
Charles Reeves Hoffman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3872275D1 publication Critical patent/DE3872275D1/de
Application granted granted Critical
Publication of DE3872275T2 publication Critical patent/DE3872275T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
DE8888101850T 1987-03-06 1988-02-09 Cmos-referenzspannungsgeneratoreinrichtung. Expired - Fee Related DE3872275T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/023,189 US4742292A (en) 1987-03-06 1987-03-06 CMOS Precision voltage reference generator

Publications (2)

Publication Number Publication Date
DE3872275D1 true DE3872275D1 (de) 1992-07-30
DE3872275T2 DE3872275T2 (de) 1993-01-07

Family

ID=21813604

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888101850T Expired - Fee Related DE3872275T2 (de) 1987-03-06 1988-02-09 Cmos-referenzspannungsgeneratoreinrichtung.

Country Status (4)

Country Link
US (1) US4742292A (de)
EP (1) EP0282725B1 (de)
JP (1) JPH07111662B2 (de)
DE (1) DE3872275T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894562A (en) * 1988-10-03 1990-01-16 International Business Machines Corporation Current switch logic circuit with controlled output signal levels
US5001362A (en) * 1989-02-14 1991-03-19 Texas Instruments Incorporated BiCMOS reference network
US4943737A (en) * 1989-10-13 1990-07-24 Advanced Micro Devices, Inc. BICMOS regulator which controls MOS transistor current
JP2715642B2 (ja) * 1990-08-22 1998-02-18 日本電気株式会社 半導体集積回路
US5059820A (en) * 1990-09-19 1991-10-22 Motorola, Inc. Switched capacitor bandgap reference circuit having a time multiplexed bipolar transistor
US5109187A (en) * 1990-09-28 1992-04-28 Intel Corporation CMOS voltage reference
US5047707A (en) * 1990-11-19 1991-09-10 Motorola, Inc. Voltage regulator and method for submicron CMOS circuits
JP3076097B2 (ja) * 1991-08-26 2000-08-14 日本電気株式会社 基準電位発生回路
FR2681961A1 (fr) * 1991-09-30 1993-04-02 Sgs Thomson Microelectronics Generateur de courant precis.
US5451859A (en) * 1991-09-30 1995-09-19 Sgs-Thomson Microelectronics, Inc. Linear transconductors
US5498952A (en) * 1991-09-30 1996-03-12 Sgs-Thomson Microelectronics, S.A. Precise current generator
US5390020A (en) * 1992-09-14 1995-02-14 Eastman Kodak Company Video amplifier stabilization for CRT printing
US5825167A (en) * 1992-09-23 1998-10-20 Sgs-Thomson Microelectronics, Inc. Linear transconductors
US5668709A (en) * 1995-03-02 1997-09-16 International Business Machine Corporation Switched capacitor current source
EP0731403A3 (de) * 1995-03-08 1997-07-23 Sgs Thomson Microelectronics Konstantstromquelle
US5703476A (en) * 1995-06-30 1997-12-30 Sgs-Thomson Microelectronics, S.R.L. Reference voltage generator, having a double slope temperature characteristic, for a voltage regulator of an automotive alternator
GB2308684B (en) * 1995-12-22 2000-03-29 Motorola Inc Switched-capacitor reference circuit
JPH10260742A (ja) * 1997-03-19 1998-09-29 Advantest Corp 精密電圧発生装置
GB2341246A (en) * 1998-09-03 2000-03-08 Ericsson Telefon Ab L M Differential level shifting circuit
US6222395B1 (en) 1999-01-04 2001-04-24 International Business Machines Corporation Single-ended semiconductor receiver with built in threshold voltage difference
US6466081B1 (en) 2000-11-08 2002-10-15 Applied Micro Circuits Corporation Temperature stable CMOS device
US6535423B2 (en) 2000-12-29 2003-03-18 Intel Corporation Drain bias for non-volatile memory
US6570789B2 (en) 2000-12-29 2003-05-27 Intel Corporation Load for non-volatile memory drain bias
US6744671B2 (en) * 2000-12-29 2004-06-01 Intel Corporation Kicker for non-volatile memory drain bias
US6434049B1 (en) * 2000-12-29 2002-08-13 Intel Corporation Sample and hold voltage reference source
US6456540B1 (en) 2001-01-30 2002-09-24 Intel Corporation Method and apparatus for gating a global column select line with address transition detection
WO2004097543A1 (ja) * 2003-04-25 2004-11-11 Semiconductor Energy Laboratory Co. Ltd. 半導体装置
KR101089050B1 (ko) 2003-05-14 2011-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2004109638A1 (ja) * 2003-06-06 2004-12-16 Semiconductor Energy Laboratory Co., Ltd. 半導体装置
JP4681983B2 (ja) * 2005-08-19 2011-05-11 富士通セミコンダクター株式会社 バンドギャップ回路
EP1793367A3 (de) * 2005-12-02 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
EP2169824A1 (de) * 2008-09-25 2010-03-31 Moscad Design & Automation Sàrl Kapazitätsfehlerverstärkungsschaltung zur Erzeugung einer präzisen Stromreferenz bzw. zur Verwendung in einem Präzisionsoszillator
US7852252B2 (en) * 2008-12-31 2010-12-14 Intel Corporation Single-ended to differential amplification and pipeline analog-to-digital conversion for digitally controlled DC-DC converters
JP5515708B2 (ja) * 2009-12-11 2014-06-11 富士通株式会社 バイアス回路及びそれを有する増幅回路
CN104536510B (zh) * 2014-11-18 2016-04-20 中山大学 一种差分电压转电流电路
CN107463201B (zh) * 2017-08-02 2018-10-19 中国电子科技集团公司第二十四研究所 一种电压转电流电路及装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
JPS5342141U (de) * 1976-09-17 1978-04-11
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
FR2447610A1 (fr) * 1979-01-26 1980-08-22 Commissariat Energie Atomique Generateur de tension de reference et circuit de mesure de la tension de seuil d'un transistor mos, applicable a ce generateur de tension de reference
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
JPS55138322U (de) * 1979-03-22 1980-10-02
JPS57157313A (en) * 1981-03-23 1982-09-28 Nec Corp Integrated semiconductor device
US4374357A (en) * 1981-07-27 1983-02-15 Motorola, Inc. Switched capacitor precision current source
US4464588A (en) * 1982-04-01 1984-08-07 National Semiconductor Corporation Temperature stable CMOS voltage reference
JPS58187015A (ja) * 1982-04-26 1983-11-01 Nippon Telegr & Teleph Corp <Ntt> スイツチト・キヤパシタ回路

Also Published As

Publication number Publication date
EP0282725A1 (de) 1988-09-21
EP0282725B1 (de) 1992-06-24
DE3872275T2 (de) 1993-01-07
JPS63229509A (ja) 1988-09-26
US4742292A (en) 1988-05-03
JPH07111662B2 (ja) 1995-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee