DE69033265D1 - Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren - Google Patents

Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren

Info

Publication number
DE69033265D1
DE69033265D1 DE69033265T DE69033265T DE69033265D1 DE 69033265 D1 DE69033265 D1 DE 69033265D1 DE 69033265 T DE69033265 T DE 69033265T DE 69033265 T DE69033265 T DE 69033265T DE 69033265 D1 DE69033265 D1 DE 69033265D1
Authority
DE
Germany
Prior art keywords
channel mos
mos transistors
semiconductor circuit
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033265T
Other languages
English (en)
Other versions
DE69033265T2 (de
Inventor
Kouji Saitoh
Yukihiro Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69033265D1 publication Critical patent/DE69033265D1/de
Publication of DE69033265T2 publication Critical patent/DE69033265T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69033265T 1989-02-03 1990-02-02 Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren Expired - Fee Related DE69033265T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1023985A JPH0770689B2 (ja) 1989-02-03 1989-02-03 半導体回路

Publications (2)

Publication Number Publication Date
DE69033265D1 true DE69033265D1 (de) 1999-10-07
DE69033265T2 DE69033265T2 (de) 2000-01-05

Family

ID=12125867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033265T Expired - Fee Related DE69033265T2 (de) 1989-02-03 1990-02-02 Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren

Country Status (4)

Country Link
EP (1) EP0381237B1 (de)
JP (1) JPH0770689B2 (de)
KR (1) KR930001289B1 (de)
DE (1) DE69033265T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0574699A2 (de) * 1992-05-20 1993-12-22 Akzo Nobel N.V. Dialysemembran aus Celluloseacetat
US5814845A (en) * 1995-01-10 1998-09-29 Carnegie Mellon University Four rail circuit architecture for ultra-low power and voltage CMOS circuit design
US6366061B1 (en) 1999-01-13 2002-04-02 Carnegie Mellon University Multiple power supply circuit architecture
DE19919129A1 (de) * 1999-04-27 2000-11-09 Siemens Ag Substratkontakt für eine leitende Wanne in einer Halbleiterspeicheranordnung
JP5022013B2 (ja) * 2006-12-12 2012-09-12 株式会社豊田中央研究所 静電気保護用半導体装置および自動車用複合ｉｃ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163837A (ja) * 1983-03-09 1984-09-14 Toshiba Corp 半導体集積回路
JPS61100947A (ja) * 1984-10-22 1986-05-19 Toshiba Corp 半導体集積回路装置
JPS6273656A (ja) * 1985-09-26 1987-04-04 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
KR900013655A (ko) 1990-09-06
JPH0770689B2 (ja) 1995-07-31
DE69033265T2 (de) 2000-01-05
EP0381237A2 (de) 1990-08-08
EP0381237A3 (de) 1991-03-27
JPH02205067A (ja) 1990-08-14
EP0381237B1 (de) 1999-09-01
KR930001289B1 (ko) 1993-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee