KR920001741A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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KR920001741A
KR920001741A KR1019910009274A KR910009274A KR920001741A KR 920001741 A KR920001741 A KR 920001741A KR 1019910009274 A KR1019910009274 A KR 1019910009274A KR 910009274 A KR910009274 A KR 910009274A KR 920001741 A KR920001741 A KR 920001741A
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semiconductor
semiconductor device
region
transistor
conductive
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KR1019910009274A
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KR950006477B1 (ko
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다케오 마에다
히로시 모모세
유키히로 우라카와
마사타카 마츠이
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아오이 죠이치
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체장치를 나타낸 단면도.
제2도 및 제3도는각각 본 발명에 따른 반도체 장치를 사용한 바이폴라 및 BiCMOS회로를 나타낸 회로도

Claims (11)

  1. 바이폴라트랜지스터(B)와 MOS트랜지스터(M₁,M₂)가 동일기관(11) 상에 형성된 반도체장치에 있어서, 상기 바이폴라트랜지스터(B)가 헤테로접합을 갖춘 헤테로바이폴랜트랜스터인 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어ㅇ서, 상기 헤테로바이폴라트랜지스터는 그 베이스 영역(20,21)이 에미터영역(23) 및 콜렉터영역(14b)에 사용되는 재료보다 좁은 밴드갭을 갖춘 재료에 의해 구성되어 있는 더블헤테로구조를 갖춘 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 헤테로바이폴라트랜지스터의 베이스 영역(20,21)의 일부 또는 전부가 실리콘과 게르마늄의 혼정(22) 으로 구성된 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 반도체장치에 사용되는 외부전원접압이 3.6V이하인 것을 특징으로 하는 반도체장치.
  5. 제1항에 있어서, 상기 반도체장치에 의해 토템폴형 BiCMOS인버터회로가 구성되도록 된것을 특징으로 하는 반도체장치.
  6. 바이폴라트랜지스터(B)와 MOS트랜지스터( M₁,M₂)가 동일 기판(11)상에 형성된 반도체장치에 있어서, 상기 바이폴랜지스터(B)가, 제1도전형 반도체기판(81)과 , 이 반도체기판(81)상에 형성된 제2도전형 반도체영역(84) 이 반도체영역(84)에 접속되면서 상기 반도체기판 (81) 상에 형성된 필드산화막(85)상에 걸리도록 형성된 제1도전형의 제1반도체층(95a.95b)및, 이 제1반도체층(95a, 95b)상에 형성된 제2도전형의 제2반조체층(94)으로 구성된 헤테로접합을 갖춘 헤테로바이폴러트랜지스터인 것을 특징으로하는 반도체장치
  7. 제6항에 있어서, 상기 반도체영역이 콜렉터영역이고, 상기 제2반도체층(94)이 에미터영역이며, 상기 제1반도체층(95a,95b)이 상기 에미터영역 및 콜렉터영역에 사용되는 재료보다 좁은 밴드갭을 구비한 재료에 의해 구성된 베이스영역인 것을 특징으로 하는 반도체장치.
  8. 제6항에 있어서, 상기 반도장치에 사용되는 외부전압이 3.6V이하인 것을 특징으로 하는 반도체장치.
  9. 제6항에 있어서, 상기 반도장치에 의해 토템폴형BiCOMS인버터회로가 구성되도록 된 것을 특징으로 하는 반도체장치.
  10. 제1도전형의 반도체기판(81)에 제2도전형의 반도체영역(84) 을 형성하는 공정과, 상기 반도체영역(84)상에 필드산화막(85)을 형성하는 공정, 전제면에 제1도전형의 제1반도체층 (93)을 형성하는공정, 전체면에 제2도전형의 제2반도체층(94)을 형성하는공정상기 제2반도체층(94)을 선택적으로 에팅하는 공정, 상기 필드산화막(85)상에 걸리도록 상기 제1반도체층 (93)을 선택적으로 에칭하는 공정을 구비하여 이루어진 것을 특징으로하는 반도체장치의 제도방법.
  11. 제10항에 있어서, 상기반도체역역(840이 콜렉트영역(14b)이고, 상기 제2반도체층(94) 이 에미터영역(23)이며, 상기 제1반도체층(93)이 상기 에미터영역 및 콜렉터영역에 사용되는 재료보다 좁은 밴드갭을 구비한 재료에 의해 구성된 베이스영역인 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009274A 1990-06-06 1991-06-05 반도체장치 및 그 제조방법 KR950006477B1 (ko)

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Application Number Priority Date Filing Date Title
JP2-146316 1990-06-06
JP2146316A JP2590295B2 (ja) 1990-06-06 1990-06-06 半導体装置及びその製造方法

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KR920001741A true KR920001741A (ko) 1992-01-30
KR950006477B1 KR950006477B1 (ko) 1995-06-15

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JPH0442968A (ja) 1992-02-13
US5399894A (en) 1995-03-21
KR950006477B1 (ko) 1995-06-15
US5512772A (en) 1996-04-30
JP2590295B2 (ja) 1997-03-12

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