KR920017243A - 바이폴라 트랜지스터 구조 및 bicmos ic 제조방법 - Google Patents

바이폴라 트랜지스터 구조 및 bicmos ic 제조방법 Download PDF

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KR920017243A
KR920017243A KR1019920002088A KR920002088A KR920017243A KR 920017243 A KR920017243 A KR 920017243A KR 1019920002088 A KR1019920002088 A KR 1019920002088A KR 920002088 A KR920002088 A KR 920002088A KR 920017243 A KR920017243 A KR 920017243A
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layer
collector
emitter
bcl
base
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KR1019920002088A
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제이. 로빈슨 뮤레이
씨. 조이스 크리스토퍼
와 룩 팀
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존 엠. 클락
내쇼날 세미컨덕터 코포레이션
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Publication of KR920017243A publication Critical patent/KR920017243A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H01L29/0826—Pedestal collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

내용 없음

Description

바이폴라 트랜지스터 구조 및 BICMOS IC 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 바이폴라 트랜지스터 구조를 2차원적으로 단순화한 개략도, 제3도는 CMOS 트랜지스터 구조용 N-웰 한정 개구부분을 지닌 신규한 2.0레트로(retro)N웰 한정 마스크를 보여줌과 아울러 바이폴라 트랜지스터 구조용 SEC한정 개구부분을 지닌 서브에미터-콜렉터 한정 마스크로서의 기능을 하는 BIMOS 제조공정의 2.0마스킹, 에칭 및 주입 단계를 2차원적으로 단순화한 개략도. 제4도는 CMOS트랜지스터 구조용 프레임형 전계 산화물 개구부분을 지닌 6.0 CMOS능동 영역 한정 마스크 또는 전계 산화물 한정 마스크 보여줌과 아울러 바이폴라 트랜지스터 구조용 CBSS한정 개구부분을 지닌 콜렉터-베이스 표면 스페이서 영역 한정 마스크로서의 기능을 하는 신규한 BICMOS제조 공정의 6.0마스킹 및 에칭단계를 2차원적으로 단순화한 개략도.

Claims (1)

  1. 기판(SUB)상에 데포지트된 반도체 재료의 에피택셜(EPI)층의 표면에서 형성된 콜렉터(C), 베이스(B) 및 에미터(E)를 지니되, 상기 기판내에 형성되어 상기 콜렉터(C), 베이스(B) 및 에미터(E)영역의 기초를 이루는 매몰된 콜렉터 층(BCL)으로서 상기 에피택셜(EPI)층의 반도체 재료에 의해 상기 베이스 및 에미터 영역으로부터 분리된 비교적 느리게 확산하는 BCL N형 원자를 포함하는 매몰된 콜렉터층(BCL), 및 상기 에피택셜층내에 형성되어 상기 콜렉터(C)영역을 상기 매몰된 콜렉터층(BCL)과 전기적으로 연결시키는 콜렉터 싱크(CS)영역을 지니며, 상기 에미터 영역이 이 에미터 영역하부에 있는 능동 베이스 영역층(ABL), 및 상기 콜렉터(C)영역 및 베이스(B)영역을 분리시키는 표면 스페이서(CBSS)영역과 함께 상기 베이스 영역내에 형성되는 집적회로 바이폴라 NPN 트랜지스터 구조에 있어서, 상기 에미터(E)영역 및 능동 베이스 영역층(ABL)의 기초를 이루는 매몰된 콜렉터층(BCL)내에 형성된 서브 에미터-콜렉터(SEC)층으로서 상기 매몰된 콜렉터층(BCL)의 상향에서 상기 에피택셜(EPI)층내로의 역행 농도로 분포된 비교적 빠르게 확산하는 N형 원자를 포함하는 서브 에미터-콜렉터(SEC)층을 포함하여 개선한 집적회로 바이폴라 NPN 트랜지스터 구조.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019920002088A 1991-02-14 1992-02-13 바이폴라 트랜지스터 구조 및 bicmos ic 제조방법 KR920017243A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65567691A 1991-02-14 1991-02-14
US91/655,676 1991-02-14

Publications (1)

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KR920017243A true KR920017243A (ko) 1992-09-26

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EP (1) EP0500233A2 (ko)
JP (1) JPH04317369A (ko)
KR (1) KR920017243A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2124843A1 (en) * 1992-02-25 1993-09-02 James A. Matthews Bipolar junction transistor exhibiting suppressed kirk effect
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
DE69316134T2 (de) * 1992-09-22 1998-06-18 Nat Semiconductor Corp Verfahren zur Herstellung eines Schottky-Transistors mit retrogradierter n-Wannenkathode
EP0613186B1 (en) * 1993-02-24 1997-01-02 STMicroelectronics S.r.l. Fully depleted lateral transistor
US5455189A (en) * 1994-02-28 1995-10-03 National Semiconductor Corporation Method of forming BICMOS structures
EP0698283A1 (en) * 1994-03-15 1996-02-28 National Semiconductor Corporation A semiconductor device having a self-aligned p-well within a p-buried-layer
DE69522926T2 (de) * 1995-05-02 2002-03-28 St Microelectronics Srl Resurf-IC mit dünner Epitaxialschicht für HV-P-Kanal und N-Kanal-Anordnungen wobei Source und Drain nicht an Erdungspotential gelegt sind
WO1997017726A1 (en) * 1995-11-07 1997-05-15 National Semiconductor Corporation Low collector resistance bipolar transistor compatible with high voltage integrated circuits
WO1997023908A1 (en) * 1995-12-21 1997-07-03 Philips Electronics N.V. Bicmos semiconductor device comprising a silicon body with locos and oxide filled groove regions for insulation
DE10002129B4 (de) * 2000-01-19 2006-10-26 Infineon Technologies Ag Vertikale DMOS-Transistoranordnung mit niedrigem Einschaltwiderstand
DE10044838C2 (de) * 2000-09-11 2002-08-08 Infineon Technologies Ag Halbleiterbauelement und Verfahren zur Herstellung eines solchen
DE10162074B4 (de) * 2001-12-06 2010-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik BiCMOS-Struktur, Verfahren zu ihrer Herstellung und Bipolartransistor für eine BiCMOS-Struktur
ES2375302T3 (es) 2005-05-24 2012-02-28 Dsm Ip Assets B.V. Derivados de ligustilida para el tratamiento de trastornos inflamatorios.
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
KR20090033470A (ko) 2006-07-14 2009-04-03 디에스엠 아이피 어셋츠 비.브이. 로즈힙 및 다른 활성 약품을 포함하는, 염증성 질환의 치료를 위한 조성물
CN102130163B (zh) * 2010-01-18 2013-01-09 上海华虹Nec电子有限公司 Esd高压dmos器件及其制造方法

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EP0500233A2 (en) 1992-08-26

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