FR2656740A1 - Semi-conducteur a jonction comportant un structure a heterojonction. - Google Patents
Semi-conducteur a jonction comportant un structure a heterojonction. Download PDFInfo
- Publication number
- FR2656740A1 FR2656740A1 FR9003009A FR9003009A FR2656740A1 FR 2656740 A1 FR2656740 A1 FR 2656740A1 FR 9003009 A FR9003009 A FR 9003009A FR 9003009 A FR9003009 A FR 9003009A FR 2656740 A1 FR2656740 A1 FR 2656740A1
- Authority
- FR
- France
- Prior art keywords
- aun
- layer
- dno
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 14
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 25
- 239000004020 conductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 101100179594 Caenorhabditis elegans ins-4 gene Proteins 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 241000269350 Anura Species 0.000 description 2
- 101100440173 Mus musculus Clu gene Proteins 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- MCCYTOKKEWJAMY-UHFFFAOYSA-N 4-amino-n-(4-methoxy-1,2,5-thiadiazol-3-yl)benzenesulfonamide;5-[(3,4,5-trimethoxyphenyl)methyl]pyrimidine-2,4-diamine Chemical compound COC1=NSN=C1NS(=O)(=O)C1=CC=C(N)C=C1.COC1=C(OC)C(OC)=CC(CC=2C(=NC(N)=NC=2)N)=C1 MCCYTOKKEWJAMY-UHFFFAOYSA-N 0.000 description 1
- 241000272522 Anas Species 0.000 description 1
- 108091023231 Ap4A Proteins 0.000 description 1
- 102000013933 Apolipoproteins D Human genes 0.000 description 1
- 108010025614 Apolipoproteins D Proteins 0.000 description 1
- 241001133287 Artocarpus hirsutus Species 0.000 description 1
- 241000182988 Assa Species 0.000 description 1
- 101100387915 Caenorhabditis elegans dop-4 gene Proteins 0.000 description 1
- 101100156339 Caenorhabditis elegans vit-5 gene Proteins 0.000 description 1
- 102100023441 Centromere protein J Human genes 0.000 description 1
- 102100029587 DDB1- and CUL4-associated factor 6 Human genes 0.000 description 1
- 101710082361 DDB1- and CUL4-associated factor 6 Proteins 0.000 description 1
- 240000008840 Dalbergia sissoo Species 0.000 description 1
- 101500022299 Dofleinia armata Delta-actitoxin-Dar1a Proteins 0.000 description 1
- 101100396994 Drosophila melanogaster Inos gene Proteins 0.000 description 1
- 241001340534 Eido Species 0.000 description 1
- 101000907924 Homo sapiens Centromere protein J Proteins 0.000 description 1
- 101000713575 Homo sapiens Tubulin beta-3 chain Proteins 0.000 description 1
- 206010042135 Stomatitis necrotising Diseases 0.000 description 1
- 102100036790 Tubulin beta-3 chain Human genes 0.000 description 1
- 244000104547 Ziziphus oenoplia Species 0.000 description 1
- 235000005505 Ziziphus oenoplia Nutrition 0.000 description 1
- RQVGAIADHNPSME-UHFFFAOYSA-N azinphos-ethyl Chemical compound C1=CC=C2C(=O)N(CSP(=S)(OCC)OCC)N=NC2=C1 RQVGAIADHNPSME-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Peptides Or Proteins (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020733A KR910013568A (ko) | 1989-12-31 | 1989-12-31 | 화합물 반도체 장치 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2656740A1 true FR2656740A1 (fr) | 1991-07-05 |
Family
ID=19294785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9003009A Pending FR2656740A1 (fr) | 1989-12-31 | 1990-03-09 | Semi-conducteur a jonction comportant un structure a heterojonction. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH03211839A (ko) |
| KR (1) | KR910013568A (ko) |
| DE (1) | DE4007896A1 (ko) |
| FR (1) | FR2656740A1 (ko) |
| GB (1) | GB2239557A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0444328A (ja) * | 1990-06-11 | 1992-02-14 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP5609055B2 (ja) * | 2009-10-02 | 2014-10-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP6690320B2 (ja) * | 2016-03-11 | 2020-04-28 | 住友電気工業株式会社 | 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法 |
| US11515410B2 (en) * | 2020-10-30 | 2022-11-29 | Raytheon Company | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232170A (ja) * | 1986-04-02 | 1987-10-12 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663643A (en) * | 1981-04-23 | 1987-05-05 | Fujitsu Limited | Semiconductor device and process for producing the same |
| JPS60189268A (ja) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
| NL8500218A (nl) * | 1985-01-28 | 1986-08-18 | Philips Nv | Halfgeleiderinrichting met tweedimensionaal ladingsdragergas. |
| JPS62204578A (ja) * | 1986-03-04 | 1987-09-09 | Nec Corp | 電界効果トランジスタの製造方法 |
| JPS62209865A (ja) * | 1986-03-10 | 1987-09-16 | Nec Corp | 半導体装置の製造方法 |
| JPS63308965A (ja) * | 1987-06-11 | 1988-12-16 | Toshiba Corp | ヘテロ接合電界効果トランジスタ |
| JP2559412B2 (ja) * | 1987-06-22 | 1996-12-04 | 株式会社日立製作所 | 半導体装置 |
| JP2541228B2 (ja) * | 1987-07-31 | 1996-10-09 | ソニー株式会社 | 高電子移動度トランジスタ |
-
1989
- 1989-12-31 KR KR1019890020733A patent/KR910013568A/ko not_active IP Right Cessation
-
1990
- 1990-03-09 FR FR9003009A patent/FR2656740A1/fr active Pending
- 1990-03-13 DE DE4007896A patent/DE4007896A1/de not_active Withdrawn
- 1990-03-14 GB GB9005732A patent/GB2239557A/en not_active Withdrawn
- 1990-03-15 JP JP2066749A patent/JPH03211839A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232170A (ja) * | 1986-04-02 | 1987-10-12 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN, vol. 12, no. 101 (E-595)[2948], 2 avril 1988; & JP-A-62 232 170 (MATSUSHITA ELECTRIC IND. CO., LTD) 12-10-1987 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03211839A (ja) | 1991-09-17 |
| KR910013568A (ko) | 1991-08-08 |
| GB9005732D0 (en) | 1990-05-09 |
| GB2239557A (en) | 1991-07-03 |
| DE4007896A1 (de) | 1991-07-11 |
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