KR920013776A - 전계효과 트랜지스터 - Google Patents

전계효과 트랜지스터 Download PDF

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Publication number
KR920013776A
KR920013776A KR1019910024335A KR910024335A KR920013776A KR 920013776 A KR920013776 A KR 920013776A KR 1019910024335 A KR1019910024335 A KR 1019910024335A KR 910024335 A KR910024335 A KR 910024335A KR 920013776 A KR920013776 A KR 920013776A
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KR
South Korea
Prior art keywords
layer
field effect
effect transistor
impurity concentration
doping
Prior art date
Application number
KR1019910024335A
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English (en)
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KR950007361B1 (ko
Inventor
노부히로 쿠와따
Original Assignee
쿠라우찌 노리타카
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 쿠라우찌 노리타카, 스미도모덴기고오교오 가부시기가이샤 filed Critical 쿠라우찌 노리타카
Publication of KR920013776A publication Critical patent/KR920013776A/ko
Application granted granted Critical
Publication of KR950007361B1 publication Critical patent/KR950007361B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음

Description

전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 의한 MESFET의 구조를 표시한 단면도, 제2도는 제1도에 도시된 MESFET의 각 제조공정에 있어서의 FET의 단면도 제3도는 본 실시예에 의한 FET와 종래의 FET에 있어서,채널이 공핍층에 의해서 완전 닫혀있는 상태를 표시한 FET단면도.

Claims (1)

  1. 불순물 농도가 높은 박층화된 채널층과, 이 채널층위에 형성된 캡층을 구비하여 형성된 전계효과트랜지스터에 있어서, 상기 캡층은 불순물이 첨가된 도우핑층을 가지고 이 도우핑층의 두께 및 불순물 농도는, 반도체기판 표면의 계면준위에 기인하는 표면공핍층에 의해서 상기 도우핑층 자신이 공핍화되고, 또한 이 표면공핍층이 상기 채널층까지 확대되지 않는 소정의 두께 및 소정의 불순물 농도인 것을 특징으로 하는 전계효과 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910024335A 1990-12-27 1991-12-26 전계효과트랜지스터 KR950007361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2407762A JP2549206B2 (ja) 1990-12-27 1990-12-27 電界効果トランジスタ
JP90-407762 1990-12-27

Publications (2)

Publication Number Publication Date
KR920013776A true KR920013776A (ko) 1992-07-29
KR950007361B1 KR950007361B1 (ko) 1995-07-10

Family

ID=18517315

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024335A KR950007361B1 (ko) 1990-12-27 1991-12-26 전계효과트랜지스터

Country Status (5)

Country Link
US (1) US5532505A (ko)
EP (1) EP0492666B1 (ko)
JP (1) JP2549206B2 (ko)
KR (1) KR950007361B1 (ko)
DE (1) DE69118146T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
JPH0685286A (ja) * 1992-09-03 1994-03-25 Sumitomo Electric Ind Ltd 電界効果トランジスタおよびその製造方法
JPH06177159A (ja) * 1992-10-09 1994-06-24 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
US5493136A (en) * 1993-02-22 1996-02-20 Sumitomo Electric Industries, Ltd. Field effect transistor and method of manufacturing the same
EP0613191A3 (en) * 1993-02-26 1995-01-25 Sumitomo Electric Industries Channel structure for field effect transistor.
JPH0883814A (ja) * 1994-07-11 1996-03-26 Toshiba Corp 化合物半導体電界効果トランジスタ及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57671B2 (ko) * 1974-03-02 1982-01-07
US4163984A (en) * 1978-01-27 1979-08-07 Raytheon Company Field effect transistor
JPS60140874A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 半導体装置
JPS60234374A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd 半導体装置の製造方法
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS61177779A (ja) * 1985-02-01 1986-08-09 Nec Corp 電界効果トランジスタ
JPH0783028B2 (ja) * 1986-06-02 1995-09-06 株式会社日立製作所 半導体装置及び製造方法
JPH0831484B2 (ja) * 1986-10-16 1996-03-27 株式会社日立製作所 電界効果トランジスタの製造方法
JPH01260861A (ja) * 1988-04-12 1989-10-18 Mitsubishi Electric Corp 電界効果トランジスタ
US5151758A (en) * 1991-02-20 1992-09-29 Comsat Planar-doped valley field effect transistor (PDVFET)

Also Published As

Publication number Publication date
KR950007361B1 (ko) 1995-07-10
EP0492666A2 (en) 1992-07-01
DE69118146D1 (de) 1996-04-25
US5532505A (en) 1996-07-02
DE69118146T2 (de) 1996-11-28
JP2549206B2 (ja) 1996-10-30
EP0492666B1 (en) 1996-03-20
JPH04225533A (ja) 1992-08-14
EP0492666A3 (en) 1992-11-04

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