KR920010955A - Soimos트랜지스터 - Google Patents

Soimos트랜지스터 Download PDF

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Publication number
KR920010955A
KR920010955A KR1019910018498A KR910018498A KR920010955A KR 920010955 A KR920010955 A KR 920010955A KR 1019910018498 A KR1019910018498 A KR 1019910018498A KR 910018498 A KR910018498 A KR 910018498A KR 920010955 A KR920010955 A KR 920010955A
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KR
South Korea
Prior art keywords
soimos transistor
source
gate electrode
soi layer
soimos
Prior art date
Application number
KR1019910018498A
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English (en)
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KR100238699B1 (ko
Inventor
요시히로 미야자와
마꼬도 하시모도
Original Assignee
오가 노리오
소니 가부시기가이샤
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Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920010955A publication Critical patent/KR920010955A/ko
Application granted granted Critical
Publication of KR100238699B1 publication Critical patent/KR100238699B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

SOIMOS트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 제2도는 본원 발명 SOIMOS트랜지스터의 하나의 실시예를 설명하기위한 것으로, 제1도는 단면도,
제2도(A) 내지 (C)는 제1도에 도시한 SOIMOS트랜지스터의 제조방법을 공정순으로 도시한 단면도.

Claims (1)

  1. SOI층상의 게이트전극을 마스크로하여 이 SOI층에 불순물을 도프함으로써 형성된 소스 및 드레인의 내측에 이 소스 및 드레인으로 부터의 횡방향 불순물확산에 의해 게이트 전극밑에 뻗은 저불순물농도영역을 가지는 것을 특징으로 하는 SOIMOS트랜지스터.
    ※ 참고사항：최초출원 내용에 의하여 공개되는 것임.
KR1019910018498A 1990-11-23 1991-10-21 Soimos트랜지스터 KR100238699B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-122541 1990-11-23
JP1990122541U JPH0479424U (ko) 1990-11-23 1990-11-23

Publications (2)

Publication Number Publication Date
KR920010955A true KR920010955A (ko) 1992-06-27
KR100238699B1 KR100238699B1 (ko) 2000-01-15

Family

ID=14838427

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018498A KR100238699B1 (ko) 1990-11-23 1991-10-21 Soimos트랜지스터

Country Status (3)

Country Link
US (1) US5395772A (ko)
JP (1) JPH0479424U (ko)
KR (1) KR100238699B1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US5472894A (en) * 1994-08-23 1995-12-05 United Microelectronics Corp. Method of fabricating lightly doped drain transistor device
US5705405A (en) * 1994-09-30 1998-01-06 Sgs-Thomson Microelectronics, Inc. Method of making the film transistor with all-around gate electrode
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US5891782A (en) * 1997-08-21 1999-04-06 Sharp Microelectronics Technology, Inc. Method for fabricating an asymmetric channel doped MOS structure
US6049230A (en) * 1998-03-06 2000-04-11 International Business Machines Corporation Silicon on insulator domino logic circuits
US5917199A (en) * 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
CN100442521C (zh) * 2000-08-17 2008-12-10 株式会社东芝 半导体存储装置
KR101827848B1 (ko) * 2010-10-22 2018-03-23 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비한 표시 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142566A (ja) * 1982-02-19 1983-08-24 Seiko Epson Corp 薄膜半導体装置
KR900001267B1 (ko) * 1983-11-30 1990-03-05 후지쓰 가부시끼가이샤 Soi형 반도체 장치의 제조방법
US4939558A (en) * 1985-09-27 1990-07-03 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
JP2551127B2 (ja) * 1989-01-07 1996-11-06 三菱電機株式会社 Ｍｉｓ型半導体装置およびその製造方法
US5170232A (en) * 1989-08-24 1992-12-08 Nec Corporation MOS field-effect transistor with sidewall spacers

Also Published As

Publication number Publication date
JPH0479424U (ko) 1992-07-10
US5395772A (en) 1995-03-07
KR100238699B1 (ko) 2000-01-15

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