KR900017136A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR900017136A
KR900017136A KR1019900005982A KR900005982A KR900017136A KR 900017136 A KR900017136 A KR 900017136A KR 1019900005982 A KR1019900005982 A KR 1019900005982A KR 900005982 A KR900005982 A KR 900005982A KR 900017136 A KR900017136 A KR 900017136A
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South Korea
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film
semiconductor device
electrode layers
metal electrode
insulating film
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KR1019900005982A
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English (en)
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KR930010981B1 (ko
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세이치 모리
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아오이 죠이치
가부시키가이샤 도시바
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Publication of KR900017136A publication Critical patent/KR900017136A/ko
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Publication of KR930010981B1 publication Critical patent/KR930010981B1/ko

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 본 발명의 제1실시예에 따른 본딩패드부의 구조를 나타낸 단면도.
제2b도는 본 발명의 제2실시예에 따른 본딩패드부의 구조를 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
101, 201 : 실리콘기판 102,202 : 필드 산화막
103 : 폴리실리콘막(제1층의 게이트재료) 104 : ONO 절연막
1051: 폴리실리콘막
1052: MoSi막(제2층의 게이트재료)
106, 203 : 장벽금속층 107, 204 : 금속전극층
108 : 층간절연막 109, 205 : 패시베이션막
110 : 폴리실리콘막(제3층의 재료) 120, 206 : 본딩와이어

Claims (3)

  1. 반도체기판(101)과, 이 반도체기판(101)상에 형성된 절연막(102), 이 절연막(102)상에 형성되어 본딩패드로서 이용되는 금속전극층(106,107) 및, 이 금속전극층(106,107)에 접속된 본딩와이어(120)를 갖춘 반도체장치에 있어서, 상기 절연막(102)과 상기 금속전극층(106,107)간에 제1폴리실리콘막(103)과, 제1산화막과 이 제1산화막상에 형성된 질화막 및 이 질화막상에 형성된 제2산화막을 구비한 복합막(104) 및, 이 복합막(104)상에 형성된 제2폴리실리콘막(1051)을 더 갖춘 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 금속전극층(106,107)과 상기 제2폴리실리콘막(1051)간에 고용된 금속막 또는 고융점 금속실리사이드로 이루어지는 막(1052)을 더 갖춘 것을 특징으로 한느 반도체장치.
  3. 제2항에 있어서, 상기 막(1052)과 상기 금속전극층(106,107)간에 층간절연막(108)을 더 갖춘 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005982A 1989-04-27 1990-04-27 반도체장치 KR930010981B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-105912 1989-04-27
JP1105912A JPH02285638A (ja) 1989-04-27 1989-04-27 半導体装置

Publications (2)

Publication Number Publication Date
KR900017136A true KR900017136A (ko) 1990-11-15
KR930010981B1 KR930010981B1 (ko) 1993-11-18

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JP (1) JPH02285638A (ko)
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Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180623A (en) * 1989-12-27 1993-01-19 Honeywell Inc. Electronic microvalve apparatus and fabrication
JP2616227B2 (ja) * 1990-11-24 1997-06-04 日本電気株式会社 半導体装置
JP2765673B2 (ja) * 1992-06-04 1998-06-18 インターナショナル・ビジネス・マシーンズ・コーポレイション メタライゼーション層及びその形成方法
US5316976A (en) * 1992-07-08 1994-05-31 National Semiconductor Corporation Crater prevention technique for semiconductor processing
US5309025A (en) * 1992-07-27 1994-05-03 Sgs-Thomson Microelectronics, Inc. Semiconductor bond pad structure and method
US5249728A (en) * 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
US5445994A (en) * 1994-04-11 1995-08-29 Micron Technology, Inc. Method for forming custom planar metal bonding pad connectors for semiconductor dice
US5483105A (en) * 1994-04-25 1996-01-09 International Business Machines Corporation Module input-output pad having stepped set-back
US5702979A (en) * 1994-05-31 1997-12-30 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5633196A (en) * 1994-05-31 1997-05-27 Sgs-Thomson Microelectronics, Inc. Method of forming a barrier and landing pad structure in an integrated circuit
US5956615A (en) * 1994-05-31 1999-09-21 Stmicroelectronics, Inc. Method of forming a metal contact to landing pad structure in an integrated circuit
US5945738A (en) * 1994-05-31 1999-08-31 Stmicroelectronics, Inc. Dual landing pad structure in an integrated circuit
US5661081A (en) * 1994-09-30 1997-08-26 United Microelectronics Corporation Method of bonding an aluminum wire to an intergrated circuit bond pad
US5705427A (en) * 1994-12-22 1998-01-06 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
JP4156044B2 (ja) * 1994-12-22 2008-09-24 エスティーマイクロエレクトロニクス，インコーポレイテッド 集積回路におけるランディングパッド構成体の製造方法
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
KR100475734B1 (ko) * 1997-10-14 2005-06-23 삼성전자주식회사 와이어본딩충격에대한완충특성을갖는반도체장치의패드및그제조방법
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
EP1061570B1 (en) * 1998-02-25 2007-01-24 Citizen Watch Co. Ltd. Semiconductor device with bumped contacts and manufacturing method thereof
JP3121311B2 (ja) * 1998-05-26 2000-12-25 日本電気株式会社 多層配線構造及びそれを有する半導体装置並びにそれらの製造方法
US6268282B1 (en) * 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6037668A (en) * 1998-11-13 2000-03-14 Motorola, Inc. Integrated circuit having a support structure
US6020647A (en) * 1998-12-18 2000-02-01 Vlsi Technology, Inc. Composite metallization structures for improved post bonding reliability
US6191481B1 (en) 1998-12-18 2001-02-20 Philips Electronics North America Corp. Electromigration impeding composite metallization lines and methods for making the same
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6828683B2 (en) * 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) * 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
JP3327244B2 (ja) * 1999-03-12 2002-09-24 日本電気株式会社 半導体装置
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
JP2001118927A (ja) * 1999-10-22 2001-04-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002076051A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置のボンディングパッド構造及びボンディング方法
US6440860B1 (en) * 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
KR100403619B1 (ko) * 2001-02-21 2003-10-30 삼성전자주식회사 열적/기계적 스트레스에 저항성이 강한 반도체 소자의 본드패드 및 그 형성방법
US6465895B1 (en) 2001-04-05 2002-10-15 Samsung Electronics Co., Ltd. Bonding pad structures for semiconductor devices and fabrication methods thereof
JP3943416B2 (ja) * 2002-03-07 2007-07-11 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3967199B2 (ja) * 2002-06-04 2007-08-29 シャープ株式会社 半導体装置及びその製造方法
JP3724464B2 (ja) * 2002-08-19 2005-12-07 株式会社デンソー 半導体圧力センサ
US6686665B1 (en) * 2002-09-04 2004-02-03 Zeevo, Inc. Solder pad structure for low temperature co-fired ceramic package and method for making the same
US20120299187A1 (en) * 2011-05-27 2012-11-29 Broadcom Corporation Aluminum Bond Pad With Trench Thinning for Fine Pitch Ultra-Thick Aluminum Products
JP2016028417A (ja) 2014-07-11 2016-02-25 ローム株式会社 電子装置
DE102018105462A1 (de) * 2018-03-09 2019-09-12 Infineon Technologies Ag Halbleitervorrichtung, die ein bondpad und einen bonddraht oder -clip enthält

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53124084A (en) * 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture
US4136434A (en) * 1977-06-10 1979-01-30 Bell Telephone Laboratories, Incorporated Fabrication of small contact openings in large-scale-integrated devices
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
US4398335A (en) * 1980-12-09 1983-08-16 Fairchild Camera & Instrument Corporation Multilayer metal silicide interconnections for integrated circuits
JPS5921034A (ja) * 1982-07-27 1984-02-02 Toshiba Corp 半導体装置
US4613956A (en) * 1983-02-23 1986-09-23 Texas Instruments Incorporated Floating gate memory with improved dielectric
JPS59204276A (ja) * 1983-05-06 1984-11-19 Nec Corp 絶縁ゲ−ト電界効果半導体装置
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4824803A (en) * 1987-06-22 1989-04-25 Standard Microsystems Corporation Multilayer metallization method for integrated circuits
JP2503022B2 (ja) * 1987-07-23 1996-06-05 三井東圧化学株式会社 ４▲’▼−ヒドロキシビフェニル−３−カルボン酸の製造方法
JP2735193B2 (ja) * 1987-08-25 1998-04-02 株式会社東芝 不揮発性半導体装置及びその製造方法
US4872050A (en) * 1988-03-15 1989-10-03 Mitsubishi Denki Kabushiki Kaisha Interconnection structure in semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
JPH02285638A (ja) 1990-11-22
US5036383A (en) 1991-07-30
DE69033229T2 (de) 1999-12-16
EP0395072B1 (en) 1999-08-04
KR930010981B1 (ko) 1993-11-18
DE69033229D1 (de) 1999-09-09
EP0395072A2 (en) 1990-10-31
EP0395072A3 (en) 1991-07-17

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