JP2016028417A - 電子装置 - Google Patents
電子装置 Download PDFInfo
- Publication number
- JP2016028417A JP2016028417A JP2015133507A JP2015133507A JP2016028417A JP 2016028417 A JP2016028417 A JP 2016028417A JP 2015133507 A JP2015133507 A JP 2015133507A JP 2015133507 A JP2015133507 A JP 2015133507A JP 2016028417 A JP2016028417 A JP 2016028417A
- Authority
- JP
- Japan
- Prior art keywords
- electronic device
- wire
- layer
- bonding
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48824—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
- H01L2224/78305—Shape of other portions
- H01L2224/78306—Shape of other portions inside the capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
図1〜図20を用いて、本発明の第1実施形態について説明する。
図22を用いて、本発明の第2実施形態について説明する。
図23、図24を用いて、本発明の第3実施形態について説明する。
図25、図26を用いて、本発明の第4実施形態について説明する。
11 半導体基板
13 第1導電層
131 ボンディングパッド
131A パッド表面
131B パッド裏面
131E 延出部
131M 金属薄膜層
131R 接合領域
131α 第1ボンディングパッド
131β 第2ボンディングパッド
133 配線メタル
139 クラック
14 第2導電層
141 緩衝部
141A 緩衝部表面
141B 緩衝部裏面
141C 周縁
143 配線部分
15 第3導電層
151 第1配線部位
153 第2配線部位
16 第4導電層
161 第1配線膜
163 第2配線膜
165 第3配線膜
170 支持ビア
171 第1ビア
172 第2ビア
173 第3ビア
174 第4ビア
177 連絡部
18 絶縁層
19 保護層
191 パッシベーション膜
191A SiN層
191B SiO2層
193 ポリイミド層
19A 開口
19Aa 内縁
21 Pd層
211 表面
22 Ni層
221 表面
23 Cu層
231 表面
29 Al層
3 ワイヤ
31 ボンディング部分
311 底面
312 側面
312A 第1曲面部
312B 第2曲面部
313A 境界
313B 境界
314 被押し付け面
314A 第1部分
314B 第2部分
314C 屈曲部
316 周面
319 ボール
33 ボンディング部位
35 橋絡部
39 混入金属
5 リードフレーム
51 主電極
52 副電極
521 Cu部
521A Cu部
522 Ag層
522A Ag層
7 封止樹脂
8 キャピラリ
81 ホール内面
82 押し付け部
821 第1押し付け領域
822 第2押し付け領域
A10,A11,A12,A13 電子装置
L1 ボール径
L2,L3,L4 直径
L5,L6,L7 最大高低差
Z 厚さ方向
Claims (37)
- 電子素子と、
前記電子素子にボンディングされたワイヤと、を備え、
前記電子素子は、前記ワイヤがボンディングされたボンディングパッドを含み、
前記ボンディングパッドの主成分は、Alであり、
前記ワイヤには、混入金属が混入されており、
前記混入金属は、Pt、Pd、あるいはAuのいずれかである、電子装置。 - 前記ワイヤの主成分は、Cu、あるいはAgである、請求項1に記載の電子装置。
- 前記ワイヤの主成分は、Cuである、請求項1に記載の電子装置。
- 前記ワイヤにおける前記混入金属の濃度は、0.5〜5wt%である、請求項1ないし請求項3のいずれかに記載の電子装置。
- 前記ボンディングパッドは、金属薄膜層を含み、
前記金属薄膜層は、CuAl2よりなる、請求項3に記載の電子装置。 - 前記金属薄膜層は、前記ワイヤに接している、請求項5に記載の電子装置。
- 前記金属薄膜層の厚さは、5〜20nmである、請求項6に記載の電子装置。
- 前記ワイヤは、前記電子素子にボンディングされたボンディング部分を含み、
前記ボンディング部分の外面は、底面と、側面と、被押し付け面と、を有し、
前記底面は、前記ボンディングパッドに接しており、
前記側面は、前記被押し付け面および前記底面をつないでおり、
前記被押し付け面は、輪状の屈曲部を有しており、且つ、前記ボンディングパッドの厚さ方向視において、前記側面よりも内側に位置しており、
前記側面は、第1曲面部を有し、前記第1曲面部は、前記底面と前記側面との境界を起点として、前記厚さ方向視において外側に向かうほど、前記被押し付け面側に向かう曲面状である、請求項1に記載の電子装置。 - 前記底面は、円形状であり、前記厚さ方向のうち前記ボンディング部分から前記ボンディングパッドに向かう方向を向いている、請求項8に記載の電子装置。
- 前記側面は、環状である、請求項8または請求項9に記載の電子装置。
- 前記第1曲面部の少なくとも一部は、前記ボンディングパッドに接している、請求項8に記載の電子装置。
- 前記側面は、第2曲面部を有し、前記第2曲面部は、前記被押し付け面と前記側面との境界を起点として、前記厚さ方向視において外側に向かうほど、前記底面側に向かう曲面状である、請求項8ないし請求項11のいずれかに記載の電子装置。
- 前記被押し付け面は、各々が環状である第1部分および第2部分を有し、
前記第1部分は、前記側面につながっており、
前記第2部分は、前記屈曲部を介して前記第1部分につながっている、請求項11に記載の電子装置。 - 前記第1部分および前記第2部分はいずれも平坦である、請求項13に記載の電子装置。
- 前記第2部分は、前記第1部分に対し傾斜しており、且つ、前記第1部分に対し180度以下の角度をなす、請求項14に記載の電子装置。
- 前記第1部分は、前記厚さ方向視において、前記側面および前記屈曲部の間に位置しており、
前記第2部分は、前記厚さ方向視において、前記屈曲部よりも内側に位置している、請求項13ないし請求項15のいずれかに記載の電子装置。 - 前記第2部分は、全体にわたって、前記厚さ方向視において、前記底面に重なっている、請求項13に記載の電子装置。
- 前記第2部分は、前記厚さ方向において前記底面から離れるほど、前記厚さ方向視において内側に向かうように、前記厚さ方向に対し傾斜している、請求項13に記載の電子装置。
- 前記ボンディング部分の外面は、周面を有し、
前記周面は、前記被押し付け面につながっており、且つ、前記被押し付け面から起立している、請求項8に記載の電子装置。 - 前記周面は、断面形状が円形状である、請求項19に記載の電子装置。
- 前記周面は、前記厚さ方向に沿って延びている、請求項20に記載の電子装置。
- 前記周面は、前記厚さ方向視において、前記被押し付け面よりも内側に位置している、請求項20または請求項21に記載の電子装置。
- 前記電子素子は、半導体素子を有する半導体基板を含み、
前記ボンディングパッドは、前記ボンディングパッドの厚さ方向視において、前記半導体基板に重なっている、請求項8に記載の電子装置。 - 前記半導体基板は、Siよりなる、請求項23に記載の電子装置。
- 前記ボンディングパッドは、互いに反対側を向くパッド表面およびパッド裏面を有し、
前記パッド表面には、前記ワイヤがボンディングされている、請求項23または請求項24に記載の電子装置。 - 前記ボンディングパッドは、前記パッド表面から延び出る延出部を含み、
前記延出部は、前記ボンディング部分に沿って前記パッド表面から延び出ている、請求項25に記載の電子装置。 - 前記延出部は、前記側面に接している、請求項26に記載の電子装置。
- 前記電子素子は、絶縁性の保護層を含み、
前記保護層は、前記ボンディングパッドを露出させている、請求項1ないし請求項27のいずれかに記載の電子装置。 - 前記保護層には、開口が形成されており、
前記開口からは、前記ボンディングパッドが露出している、請求項28に記載の電子装置。 - 前記保護層は、パッシベーション膜を有し、
前記パッシベーション膜は、SiNおよびSiO2の少なくともいずれかよりなる、請求項28または請求項29に記載の電子装置。 - 前記パッシベーション膜は、互いに積層されたSiN層およびSiO2層を有する、請求項30に記載の電子装置。
- 前記保護層は、前記パッシベーション膜を覆うポリイミド層を有する、請求項31に記載の電子装置。
- 前記ワイヤがボンディングされた副電極を更に備える、請求項8に記載の電子装置。
- 前記ワイヤは、前記副電極にボンディングされたボンディング部位と、前記ボンディング部分および前記ボンディング部位につながる橋絡部と、を含む、請求項33に記載の電子装置。
- 前記ボンディング部位は、前記ボンディング部分よりも後にボンディングされたものである、請求項34に記載の電子装置。
- 前記電子素子および前記ワイヤを封止する封止樹脂を更に備える、請求項8に記載の電子装置。
- 前記封止樹脂は、前記側面の一部を覆っている、請求項36に記載の電子装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015133507A JP2016028417A (ja) | 2014-07-11 | 2015-07-02 | 電子装置 |
US14/794,226 US9698068B2 (en) | 2014-07-11 | 2015-07-08 | Electronic device |
US15/611,300 US10332815B2 (en) | 2014-07-11 | 2017-06-01 | Electronic device |
US16/420,978 US10903129B2 (en) | 2014-07-11 | 2019-05-23 | Electronic device |
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014143162 | 2014-07-11 | ||
JP2014143163 | 2014-07-11 | ||
JP2014143160 | 2014-07-11 | ||
JP2014143162 | 2014-07-11 | ||
JP2014143161 | 2014-07-11 | ||
JP2014143161 | 2014-07-11 | ||
JP2014143160 | 2014-07-11 | ||
JP2014143163 | 2014-07-11 | ||
JP2014143159 | 2014-07-11 | ||
JP2014143159 | 2014-07-11 | ||
JP2015133507A JP2016028417A (ja) | 2014-07-11 | 2015-07-02 | 電子装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019164166A Division JP6810222B2 (ja) | 2014-07-11 | 2019-09-10 | 電子装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016028417A true JP2016028417A (ja) | 2016-02-25 |
Family
ID=55068156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015133507A Pending JP2016028417A (ja) | 2014-07-11 | 2015-07-02 | 電子装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US9698068B2 (ja) |
JP (1) | JP2016028417A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018064036A (ja) * | 2016-10-13 | 2018-04-19 | ローム株式会社 | ワイヤボンディング構造および電子装置 |
JP7176662B1 (ja) * | 2021-11-04 | 2022-11-22 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9627337B2 (en) * | 2011-03-31 | 2017-04-18 | Novatek Microelectronics Corp. | Integrated circuit device |
JP6688725B2 (ja) | 2016-12-26 | 2020-04-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US11462495B2 (en) * | 2020-05-21 | 2022-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chiplets 3D SoIC system integration and fabrication methods |
DE102020128855A1 (de) * | 2020-05-21 | 2021-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chiplets-3d-soic-systemintegrations- und herstellungsverfahren |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6197937A (ja) * | 1984-10-19 | 1986-05-16 | Toshiba Corp | 半導体素子の組立方法及びその装置 |
JPH0243747A (ja) * | 1988-08-04 | 1990-02-14 | Mitsubishi Electric Corp | 半導体装置 |
JPH02187042A (ja) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH10247661A (ja) * | 1997-03-04 | 1998-09-14 | Nkk Corp | ボンディング用構造の形成方法 |
JP2009177104A (ja) * | 2007-02-20 | 2009-08-06 | Nec Electronics Corp | 半導体装置 |
JP2010510648A (ja) * | 2006-11-20 | 2010-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ワイヤ接合構造体及びはんだ接合構造体の形成方法 |
JP2012084878A (ja) * | 2009-06-24 | 2012-04-26 | Nippon Steel Materials Co Ltd | 半導体用銅合金ボンディングワイヤ |
JP2012222194A (ja) * | 2011-04-11 | 2012-11-12 | Sumitomo Metal Mining Co Ltd | 銅ボンディングワイヤ |
JP2014022502A (ja) * | 2012-07-17 | 2014-02-03 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2014203875A (ja) * | 2013-04-02 | 2014-10-27 | 田中電子工業株式会社 | ボールボンディング用貴金属希薄銀合金ワイヤ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3577371D1 (de) * | 1984-07-27 | 1990-05-31 | Toshiba Kawasaki Kk | Apparat zum herstellen einer halbleiteranordnung. |
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
JPH02285638A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | 半導体装置 |
JP2002076051A (ja) | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置のボンディングパッド構造及びボンディング方法 |
-
2015
- 2015-07-02 JP JP2015133507A patent/JP2016028417A/ja active Pending
- 2015-07-08 US US14/794,226 patent/US9698068B2/en active Active
-
2017
- 2017-06-01 US US15/611,300 patent/US10332815B2/en active Active
-
2019
- 2019-05-23 US US16/420,978 patent/US10903129B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6197937A (ja) * | 1984-10-19 | 1986-05-16 | Toshiba Corp | 半導体素子の組立方法及びその装置 |
JPH0243747A (ja) * | 1988-08-04 | 1990-02-14 | Mitsubishi Electric Corp | 半導体装置 |
JPH02187042A (ja) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH10247661A (ja) * | 1997-03-04 | 1998-09-14 | Nkk Corp | ボンディング用構造の形成方法 |
JP2010510648A (ja) * | 2006-11-20 | 2010-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ワイヤ接合構造体及びはんだ接合構造体の形成方法 |
JP2009177104A (ja) * | 2007-02-20 | 2009-08-06 | Nec Electronics Corp | 半導体装置 |
JP2012084878A (ja) * | 2009-06-24 | 2012-04-26 | Nippon Steel Materials Co Ltd | 半導体用銅合金ボンディングワイヤ |
JP2012222194A (ja) * | 2011-04-11 | 2012-11-12 | Sumitomo Metal Mining Co Ltd | 銅ボンディングワイヤ |
JP2014022502A (ja) * | 2012-07-17 | 2014-02-03 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2014203875A (ja) * | 2013-04-02 | 2014-10-27 | 田中電子工業株式会社 | ボールボンディング用貴金属希薄銀合金ワイヤ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018064036A (ja) * | 2016-10-13 | 2018-04-19 | ローム株式会社 | ワイヤボンディング構造および電子装置 |
US10109560B2 (en) | 2016-10-13 | 2018-10-23 | Rohm Co., Ltd. | Wire bonding structure and electronic device |
JP7176662B1 (ja) * | 2021-11-04 | 2022-11-22 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
WO2023079640A1 (ja) * | 2021-11-04 | 2023-05-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Also Published As
Publication number | Publication date |
---|---|
US10903129B2 (en) | 2021-01-26 |
US20190279915A1 (en) | 2019-09-12 |
US10332815B2 (en) | 2019-06-25 |
US20160013149A1 (en) | 2016-01-14 |
US9698068B2 (en) | 2017-07-04 |
US20170271225A1 (en) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2016028417A (ja) | 電子装置 | |
JP5049684B2 (ja) | 積層型半導体装置及びその製造方法 | |
TW200805569A (en) | Process for manufacturing semiconductor device | |
JP6377981B2 (ja) | 電子装置 | |
EP1906452A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
US10153241B2 (en) | Semiconductor device and method of manufacturing the same | |
US9484294B2 (en) | Semiconductor device and method of manufacturing the same | |
JP2012109419A (ja) | 半導体装置 | |
JP2019204982A (ja) | 電子装置 | |
WO2017110728A1 (ja) | シールリング、電子部品収納用パッケージ、電子デバイスおよびこれらの製造方法 | |
JP2014017367A (ja) | 半導体装置 | |
JP2009105528A (ja) | フリップチップ型電子部品、弾性表面波素子及びその製造方法 | |
JP2013080809A (ja) | 半導体装置 | |
JP2006196657A (ja) | 半導体装置の製造方法 | |
JP2005302941A (ja) | 半導体装置の製造方法 | |
JP2007157857A (ja) | 半導体装置 | |
US8969135B2 (en) | Semiconductor device and method of assembling same | |
JP2014011396A (ja) | 半導体装置の実装構造および半導体装置の実装方法 | |
JP2023044582A (ja) | 半導体装置 | |
TWI427752B (zh) | 在引線框架和晶圓上印刷粘接材料的半導體封裝及其製造方法 | |
TWI529871B (zh) | 半導體裝置及其製法 | |
TWI235468B (en) | Structure with mounting a wafer level chip scale package | |
JP2006253374A (ja) | 樹脂封止型半導体装置 | |
JP2008218703A (ja) | 半導体装置及びその製造方法 | |
JP2007250834A (ja) | 電子部品装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180612 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190322 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190523 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190611 |