JP2010510648A - ワイヤ接合構造体及びはんだ接合構造体の形成方法 - Google Patents
ワイヤ接合構造体及びはんだ接合構造体の形成方法 Download PDFInfo
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- JP2010510648A JP2010510648A JP2009536694A JP2009536694A JP2010510648A JP 2010510648 A JP2010510648 A JP 2010510648A JP 2009536694 A JP2009536694 A JP 2009536694A JP 2009536694 A JP2009536694 A JP 2009536694A JP 2010510648 A JP2010510648 A JP 2010510648A
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract
【解決手段】 一実施形態において、方法は、ワイヤ接合のためのワイヤ接合金属領域及びはんだ接合のためのはんだ接合金属領域を含む構造体を準備するステップと、ワイヤ接合金属領域の上にのみ保護層を形成するステップと、ワイヤ接合金属領域及びはんだ接合金属領域の上のシリコン酸化物層の上にシリコン窒化物層を形成するステップと、ワイヤ接合金属領域が覆われた状態を保ちながら、はんだ接合金属領域に対するはんだ接合部を形成するステップと、保護層を除去するステップを含むワイヤ接合金属領域を露出させるステップと、ワイヤ接合金属領域に対するワイヤ接合部を形成するステップとを含む。ワイヤ接合構造体及びはんだ接合構造体は、必要に応じて、単一のマルチパート・ウェハ(MPW)上又は単一チップ上でアクセス可能にすることができる。
【選択図】 図9
Description
102:ワイヤ接合金属領域
104:はんだ接合金属領域
106:シリコン窒化物層
108:シリコン酸化物層
110:基板
112:ワイヤ
114、116、118:バリア層
130:ポリイミド層
132、134:開口部
140、184:フォトレジスト
142:中間開口部
144、192、194:エッチング
150、250:保護層
152:未硬化感光性ポリイミド(PSPI)層
180:はんだ接合部
182:BLM層
186:開口部
190:ワイヤ接合部
196:湿式洗浄
252:バリア層部分
Claims (20)
- ワイヤ接合構造体及びはんだ接合構造体を形成する方法であって、
ワイヤ接合のためのワイヤ接合金属領域及びはんだ接合のためのはんだ接合金属領域を含む構造体を準備するステップと、
前記ワイヤ接合金属領域の上にのみ保護層を形成するステップと、
前記ワイヤ接合金属領域及び前記はんだ接合金属領域の上のシリコン酸化物層の上にシリコン窒化物層を形成するステップと、
前記ワイヤ接合金属領域が覆われた状態を保ちながら、前記はんだ接合金属領域に対するはんだ接合部を形成するステップと、
前記保護層を除去するステップを含む前記ワイヤ接合金属領域を露出させるステップと、
前記ワイヤ接合金属領域に対するワイヤ接合部を形成するステップと、
を含む方法。 - 前記保護層の形成ステップは、前記シリコン酸化物層及び前記シリコン窒化物層の形成後に行われ、前記保護層の形成ステップは、
前記はんだ接合金属領域及び前記ワイヤ接合金属領域の上の前記シリコン窒化物層の上にポリイミド層を形成するステップと、
前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記ワイヤ接合金属領域を露出させる第1の開口部を形成し、実質的に同時に、前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記はんだ接合金属領域を露出させる第2の開口部を形成するステップと、
前記露出されたワイヤ接合金属領域の上にのみ未硬化感光性ポリイミド(PSPI)層を形成することによって前記保護層を形成するステップと、
を含む、請求項1に記載の方法。 - 前記ワイヤ接合金属領域を露出させるステップは、前記未硬化PSPI層を除去して前記ワイヤ接合金属領域を露出させるステップを含む、請求項2に記載の方法。
- 前記未硬化PSPI層の除去後に、前記ワイヤ接合金属領域の湿式洗浄を行うステップと、
前記はんだ接合部を洗浄し、リフローするステップと、
をさらに含む、請求項3に記載の方法。 - 前記保護層の形成ステップは、前記シリコン酸化物層及び前記シリコン窒化物層の形成前に行われ、前記保護層の形成は、前記ワイヤ接合金属領域の上にのみバリア層部分を形成するステップを含む、請求項1に記載の方法。
- 前記はんだ接合金属領域及び前記ワイヤ接合金属領域の上の前記シリコン窒化物層の上にポリイミド層を形成するステップと、
前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記ワイヤ接合金属領域の上の前記バリア層部分を露出させる第1の開口部を形成し、実質的に同時に、前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記はんだ接合金属領域を露出させる第2の開口部を形成するステップと、
をさらに含む、請求項5に記載の方法。 - 前記ワイヤ接合金属領域を露出させるステップは、前記バリア層部分を除去して前記ワイヤ接合金属領域を露出させるステップを含む、請求項6に記載の方法。
- 前記未硬化PSPI層の除去後に、前記ワイヤ接合金属領域の湿式洗浄を行うステップと、
前記はんだ接合部を洗浄し、リフローするステップと、
をさらに含む、請求項7に記載の方法。 - 前記はんだ接合部を形成するステップは、
ボール制限金属(BLM)層を堆積するステップと、
フォトレジストを堆積するステップと、
前記はんだ接合金属領域の上でのみ、前記フォトレジスト内に前記BLM層に至る開口部を形成するステップと、
前記フォトレジストの開口部内にはんだ接合部を形成するステップと、
前記フォトレジストと、前記はんだ接合部の下の前記BLM層以外の前記BLM層とを除去するステップと、
を含む、請求項1に記載の方法。 - 前記フォトレジストは、感光性乾式ポリマ・レジストを含む、請求項9に記載の方法。
- 前記はんだ接合金属領域及び前記ワイヤ接合金属領域の各々が、アルミニウム及び銅のうちの1つを含む、請求項1に記載の方法。
- ワイヤ接合構造体及びはんだ接合構造体を形成する方法であって、
ワイヤ接合のためのワイヤ接合金属領域及びはんだ接合のためのはんだ接合金属領域を含む構造体を準備するステップと、
前記ワイヤ接合金属領域及び前記はんだ接合金属領域の上のシリコン酸化物層の上にシリコン窒化物層を形成するステップと、
前記ワイヤ接合金属領域の上にのみ保護層を形成するステップであって、
前記はんだ接合金属領域及び前記ワイヤ接合金属領域の上の前記シリコン窒化物層の上にポリイミド層を形成し、
前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記ワイヤ接合金属領域を露出させる第1の開口部を形成し、実質的に同時に、前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記はんだ接合金属領域を露出させる第2の開口部を形成し、
前記露出されたワイヤ接合金属領域の上にのみ未硬化感光性ポリイミド(PSPI)層を形成することによって前記保護層を形成する、ステップと、
前記ワイヤ接合金属領域が覆われた状態を保ちながら、前記はんだ接合金属領域に対するはんだ接合部を形成するステップと、
前記未硬化PSPI層を除去して前記ワイヤ接合金属領域を露出させるステップと、
前記ワイヤ接合金属領域に対するワイヤ接合部を形成するステップと、
を含む方法。 - 前記未硬化PSPI層の除去後に、前記ワイヤ接合金属領域の湿式洗浄を行うステップと、
前記はんだ接合部を洗浄し、リフローするステップと、
をさらに含む、請求項12に記載の方法。 - 前記はんだ接合部を形成するステップは、
ボール制限金属(BLM)層を堆積するステップと、
フォトレジストを堆積するステップと、
前記はんだ接合金属領域の上でのみ、前記フォトレジスト内に前記BLM層に至る開口部を形成するステップと、
前記フォトレジストの開口部内にはんだ接合部を形成するステップと、
前記フォトレジストと、前記はんだ接合部の下の前記BLM層以外の前記BLM層とを除去するステップと、
を含む、請求項12に記載の方法。 - 前記フォトレジストは、感光性乾式ポリマ・レジストを含む、請求項14に記載の方法。
- 前記はんだ接合金属領域及び前記ワイヤ接合金属領域のそれぞれが、アルミニウム及び銅のうちの1つを含む、請求項12に記載の方法。
- ワイヤ接合構造体及びはんだ接合構造体を形成する方法であって、
ワイヤ接合のためのワイヤ接合金属領域及びはんだ接合のためのはんだ接合金属領域を含む構造体を準備するステップと、
前記ワイヤ接合金属領域の上にのみバリア層部分を形成することによって、前記ワイヤ接合金属領域の上にのみ保護層を形成するステップと、
前記ワイヤ接合金属領域及び前記はんだ接合金属領域の上のシリコン酸化物層の上にシリコン窒化物層を形成するステップと、
前記はんだ接合金属領域及び前記ワイヤ接合金属領域の上の前記シリコン窒化物層の上にポリイミド層を形成するステップと、
前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記ワイヤ接合金属領域の上の前記バリア層部分を露出させる第1の開口部を形成し、実質的に同時に、前記ポリイミド層、前記シリコン窒化物層及び前記シリコン酸化物層を貫通して、前記はんだ接合金属領域を露出させる第2の開口部を形成するステップと、
前記ワイヤ接合金属領域が覆われた状態を保ちながら、前記はんだ接合金属領域に対するはんだ接合部を形成するステップと、
前記バリア層部分を除去することによって、前記ワイヤ接合金属領域を露出させるステップと、
前記ワイヤ接合金属領域に対するワイヤ接合部を形成するステップと、
を含む方法。 - 前記バリア層部分の除去後に、前記ワイヤ接合金属領域の湿式洗浄を行うステップと、
前記はんだ接合部を洗浄し、リフローするステップと、
をさらに含む、請求項17に記載の方法。 - 前記はんだ接合部を形成するステップは、
ボール制限金属(BLM)層を堆積するステップと、
フォトレジストを堆積するステップと、
前記はんだ接合金属領域の上でのみ、前記フォトレジスト内に前記BLM層に至る開口部を形成するステップと、
前記フォトレジストの開口部内にはんだ接合部を形成するステップと、
前記フォトレジストと、前記はんだ接合部の下の前記BLM層以外の前記BLM層とを除去するステップと、
を含む、請求項17に記載の方法。 - 前記フォトレジストは、感光性乾式ポリマ・レジストを含む、請求項17に記載の方法。
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US11/561,434 US7521287B2 (en) | 2006-11-20 | 2006-11-20 | Wire and solder bond forming methods |
PCT/EP2007/061766 WO2008061865A1 (en) | 2006-11-20 | 2007-10-31 | Wire and solder bond forming methods |
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US (1) | US7521287B2 (ja) |
EP (1) | EP2097202B1 (ja) |
JP (1) | JP5055634B2 (ja) |
KR (1) | KR20090075858A (ja) |
AT (1) | ATE497419T1 (ja) |
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Cited By (2)
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JP2016028417A (ja) * | 2014-07-11 | 2016-02-25 | ローム株式会社 | 電子装置 |
JP2019204982A (ja) * | 2014-07-11 | 2019-11-28 | ローム株式会社 | 電子装置 |
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US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
US20120038058A1 (en) * | 2009-03-20 | 2012-02-16 | Microgan Gmbh | Vertically contacted electronic component and method for producing same |
CN102484080B (zh) * | 2009-06-18 | 2015-07-22 | 罗姆股份有限公司 | 半导体装置 |
CN103107097B (zh) * | 2011-11-11 | 2016-03-09 | 无锡华润上华科技有限公司 | 多项目晶圆的芯片制造方法 |
US9231046B2 (en) * | 2013-03-15 | 2016-01-05 | Globalfoundries Inc. | Capacitor using barrier layer metallurgy |
JP6607771B2 (ja) * | 2015-12-03 | 2019-11-20 | ローム株式会社 | 半導体装置 |
US10438909B2 (en) * | 2016-02-12 | 2019-10-08 | Globalfoundries Singapore Pte. Ltd. | Reliable passivation for integrated circuits |
US20180350732A1 (en) * | 2017-06-01 | 2018-12-06 | Applied Materials, Inc. | Small vias in a polymer layer disposed on a substrate |
CN108668450B (zh) * | 2018-03-16 | 2020-09-29 | 深圳丹邦科技股份有限公司 | 一种无胶粘剂型柔性覆铜板及其制备方法 |
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US5311404A (en) * | 1992-06-30 | 1994-05-10 | Hughes Aircraft Company | Electrical interconnection substrate with both wire bond and solder contacts |
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JP3369391B2 (ja) * | 1996-02-29 | 2003-01-20 | 株式会社東芝 | 誘電体分離型半導体装置 |
JPH09306872A (ja) * | 1996-05-14 | 1997-11-28 | Sony Corp | 半導体装置 |
JPH10247664A (ja) * | 1997-03-04 | 1998-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
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JP3405697B2 (ja) * | 1999-09-20 | 2003-05-12 | ローム株式会社 | 半導体チップ |
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JP2002198635A (ja) * | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 配線板及びその製造方法 |
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JP2003007902A (ja) * | 2001-06-21 | 2003-01-10 | Shinko Electric Ind Co Ltd | 電子部品の実装基板及び実装構造 |
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TWI317548B (en) * | 2003-05-27 | 2009-11-21 | Megica Corp | Chip structure and method for fabricating the same |
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TWI370515B (en) * | 2006-09-29 | 2012-08-11 | Megica Corp | Circuit component |
US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
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2006
- 2006-11-20 US US11/561,434 patent/US7521287B2/en not_active Expired - Fee Related
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2007
- 2007-10-31 EP EP07822113A patent/EP2097202B1/en not_active Not-in-force
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- 2007-10-31 KR KR1020097009880A patent/KR20090075858A/ko active IP Right Grant
- 2007-10-31 JP JP2009536694A patent/JP5055634B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016028417A (ja) * | 2014-07-11 | 2016-02-25 | ローム株式会社 | 電子装置 |
JP2019204982A (ja) * | 2014-07-11 | 2019-11-28 | ローム株式会社 | 電子装置 |
Also Published As
Publication number | Publication date |
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DE602007012367D1 (ja) | 2011-03-17 |
ATE497419T1 (de) | 2011-02-15 |
EP2097202B1 (en) | 2011-02-02 |
US20080119035A1 (en) | 2008-05-22 |
WO2008061865A1 (en) | 2008-05-29 |
US7521287B2 (en) | 2009-04-21 |
KR20090075858A (ko) | 2009-07-09 |
EP2097202A1 (en) | 2009-09-09 |
JP5055634B2 (ja) | 2012-10-24 |
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