ATE497419T1 - Draht- und lötverbindungsherstellungsverfahren - Google Patents

Draht- und lötverbindungsherstellungsverfahren

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Publication number
ATE497419T1
ATE497419T1 AT07822113T AT07822113T ATE497419T1 AT E497419 T1 ATE497419 T1 AT E497419T1 AT 07822113 T AT07822113 T AT 07822113T AT 07822113 T AT07822113 T AT 07822113T AT E497419 T1 ATE497419 T1 AT E497419T1
Authority
AT
Austria
Prior art keywords
metal region
wire
wire bond
bond
solder
Prior art date
Application number
AT07822113T
Other languages
English (en)
Inventor
Timothy Harrison Daubenspeck
Wolfgang Sauter
Jeffrey Peter Gambino
Christopher David Muzzy
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE497419T1 publication Critical patent/ATE497419T1/de

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016Brazing of electronic components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24Preliminary treatment
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H01L2924/11Device type
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
AT07822113T 2006-11-20 2007-10-31 Draht- und lötverbindungsherstellungsverfahren ATE497419T1 (de)

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US11/561,434 US7521287B2 (en) 2006-11-20 2006-11-20 Wire and solder bond forming methods
PCT/EP2007/061766 WO2008061865A1 (en) 2006-11-20 2007-10-31 Wire and solder bond forming methods

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601628B2 (en) * 2006-11-20 2009-10-13 International Business Machines Corporation Wire and solder bond forming methods
US7521287B2 (en) * 2006-11-20 2009-04-21 International Business Machines Corporation Wire and solder bond forming methods
EP2409327A1 (de) * 2009-03-20 2012-01-25 Microgan Gmbh Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen
EP2444999A4 (de) * 2009-06-18 2012-11-14 Rohm Co Ltd Halbleiterbauelement
CN103107097B (zh) * 2011-11-11 2016-03-09 无锡华润上华科技有限公司 多项目晶圆的芯片制造方法
US9231046B2 (en) * 2013-03-15 2016-01-05 Globalfoundries Inc. Capacitor using barrier layer metallurgy
JP6810222B2 (ja) * 2014-07-11 2021-01-06 ローム株式会社 電子装置
JP2016028417A (ja) * 2014-07-11 2016-02-25 ローム株式会社 電子装置
JP6607771B2 (ja) * 2015-12-03 2019-11-20 ローム株式会社 半導体装置
US10438909B2 (en) * 2016-02-12 2019-10-08 Globalfoundries Singapore Pte. Ltd. Reliable passivation for integrated circuits
US20180350732A1 (en) * 2017-06-01 2018-12-06 Applied Materials, Inc. Small vias in a polymer layer disposed on a substrate
CN108668450B (zh) * 2018-03-16 2020-09-29 深圳丹邦科技股份有限公司 一种无胶粘剂型柔性覆铜板及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311404A (en) * 1992-06-30 1994-05-10 Hughes Aircraft Company Electrical interconnection substrate with both wire bond and solder contacts
US6204074B1 (en) * 1995-01-09 2001-03-20 International Business Machines Corporation Chip design process for wire bond and flip-chip package
US5844317A (en) * 1995-12-21 1998-12-01 International Business Machines Corporation Consolidated chip design for wire bond and flip-chip package technologies
JP3369391B2 (ja) * 1996-02-29 2003-01-20 株式会社東芝 誘電体分離型半導体装置
JPH09306872A (ja) * 1996-05-14 1997-11-28 Sony Corp 半導体装置
JPH10247664A (ja) * 1997-03-04 1998-09-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
EP0926729A3 (de) * 1997-12-10 1999-12-08 Mitsubishi Gas Chemical Company, Inc. Kunststoffhalbleitergehäuse und seine Herstellung
JP3405697B2 (ja) * 1999-09-20 2003-05-12 ローム株式会社 半導体チップ
US6511901B1 (en) * 1999-11-05 2003-01-28 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
US6620720B1 (en) * 2000-04-10 2003-09-16 Agere Systems Inc Interconnections to copper IC's
US6388199B1 (en) * 2000-07-31 2002-05-14 Micron Technology, Inc. Selectively adjusting surface tension of soldermask material
EP1332654B1 (de) * 2000-11-10 2005-01-12 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
JP2002198635A (ja) * 2000-12-27 2002-07-12 Matsushita Electric Ind Co Ltd 配線板及びその製造方法
US6534863B2 (en) * 2001-02-09 2003-03-18 International Business Machines Corporation Common ball-limiting metallurgy for I/O sites
JP2003007902A (ja) * 2001-06-21 2003-01-10 Shinko Electric Ind Co Ltd 電子部品の実装基板及び実装構造
US6762122B2 (en) * 2001-09-27 2004-07-13 Unitivie International Limited Methods of forming metallurgy structures for wire and solder bonding
TWI317548B (en) * 2003-05-27 2009-11-21 Megica Corp Chip structure and method for fabricating the same
TWI223425B (en) * 2003-09-23 2004-11-01 Advanced Semiconductor Eng Method for mounting passive component on wafer
JP4372785B2 (ja) * 2004-06-09 2009-11-25 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
US7521287B2 (en) * 2006-11-20 2009-04-21 International Business Machines Corporation Wire and solder bond forming methods
US7601628B2 (en) * 2006-11-20 2009-10-13 International Business Machines Corporation Wire and solder bond forming methods

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DE602007012367D1 (de) 2011-03-17
EP2097202B1 (de) 2011-02-02
US20080119035A1 (en) 2008-05-22
KR20090075858A (ko) 2009-07-09
JP5055634B2 (ja) 2012-10-24
WO2008061865A1 (en) 2008-05-29
EP2097202A1 (de) 2009-09-09
JP2010510648A (ja) 2010-04-02

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