ATE497419T1 - Draht- und lötverbindungsherstellungsverfahren - Google Patents
Draht- und lötverbindungsherstellungsverfahrenInfo
- Publication number
- ATE497419T1 ATE497419T1 AT07822113T AT07822113T ATE497419T1 AT E497419 T1 ATE497419 T1 AT E497419T1 AT 07822113 T AT07822113 T AT 07822113T AT 07822113 T AT07822113 T AT 07822113T AT E497419 T1 ATE497419 T1 AT E497419T1
- Authority
- AT
- Austria
- Prior art keywords
- metal region
- wire
- wire bond
- bond
- solder
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85011—Chemical cleaning, e.g. etching, flux
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/013—Alloys
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/561,434 US7521287B2 (en) | 2006-11-20 | 2006-11-20 | Wire and solder bond forming methods |
PCT/EP2007/061766 WO2008061865A1 (en) | 2006-11-20 | 2007-10-31 | Wire and solder bond forming methods |
Publications (1)
Publication Number | Publication Date |
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ATE497419T1 true ATE497419T1 (de) | 2011-02-15 |
Family
ID=39032250
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07822113T ATE497419T1 (de) | 2006-11-20 | 2007-10-31 | Draht- und lötverbindungsherstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US7521287B2 (de) |
EP (1) | EP2097202B1 (de) |
JP (1) | JP5055634B2 (de) |
KR (1) | KR20090075858A (de) |
AT (1) | ATE497419T1 (de) |
DE (1) | DE602007012367D1 (de) |
WO (1) | WO2008061865A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
EP2409327A1 (de) * | 2009-03-20 | 2012-01-25 | Microgan Gmbh | Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen |
EP2444999A4 (de) * | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | Halbleiterbauelement |
CN103107097B (zh) * | 2011-11-11 | 2016-03-09 | 无锡华润上华科技有限公司 | 多项目晶圆的芯片制造方法 |
US9231046B2 (en) * | 2013-03-15 | 2016-01-05 | Globalfoundries Inc. | Capacitor using barrier layer metallurgy |
JP6810222B2 (ja) * | 2014-07-11 | 2021-01-06 | ローム株式会社 | 電子装置 |
JP2016028417A (ja) * | 2014-07-11 | 2016-02-25 | ローム株式会社 | 電子装置 |
JP6607771B2 (ja) * | 2015-12-03 | 2019-11-20 | ローム株式会社 | 半導体装置 |
US10438909B2 (en) * | 2016-02-12 | 2019-10-08 | Globalfoundries Singapore Pte. Ltd. | Reliable passivation for integrated circuits |
US20180350732A1 (en) * | 2017-06-01 | 2018-12-06 | Applied Materials, Inc. | Small vias in a polymer layer disposed on a substrate |
CN108668450B (zh) * | 2018-03-16 | 2020-09-29 | 深圳丹邦科技股份有限公司 | 一种无胶粘剂型柔性覆铜板及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5311404A (en) * | 1992-06-30 | 1994-05-10 | Hughes Aircraft Company | Electrical interconnection substrate with both wire bond and solder contacts |
US6204074B1 (en) * | 1995-01-09 | 2001-03-20 | International Business Machines Corporation | Chip design process for wire bond and flip-chip package |
US5844317A (en) * | 1995-12-21 | 1998-12-01 | International Business Machines Corporation | Consolidated chip design for wire bond and flip-chip package technologies |
JP3369391B2 (ja) * | 1996-02-29 | 2003-01-20 | 株式会社東芝 | 誘電体分離型半導体装置 |
JPH09306872A (ja) * | 1996-05-14 | 1997-11-28 | Sony Corp | 半導体装置 |
JPH10247664A (ja) * | 1997-03-04 | 1998-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
EP0926729A3 (de) * | 1997-12-10 | 1999-12-08 | Mitsubishi Gas Chemical Company, Inc. | Kunststoffhalbleitergehäuse und seine Herstellung |
JP3405697B2 (ja) * | 1999-09-20 | 2003-05-12 | ローム株式会社 | 半導体チップ |
US6511901B1 (en) * | 1999-11-05 | 2003-01-28 | Atmel Corporation | Metal redistribution layer having solderable pads and wire bondable pads |
US6620720B1 (en) * | 2000-04-10 | 2003-09-16 | Agere Systems Inc | Interconnections to copper IC's |
US6388199B1 (en) * | 2000-07-31 | 2002-05-14 | Micron Technology, Inc. | Selectively adjusting surface tension of soldermask material |
EP1332654B1 (de) * | 2000-11-10 | 2005-01-12 | Unitive Electronics, Inc. | Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür |
JP2002198635A (ja) * | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 配線板及びその製造方法 |
US6534863B2 (en) * | 2001-02-09 | 2003-03-18 | International Business Machines Corporation | Common ball-limiting metallurgy for I/O sites |
JP2003007902A (ja) * | 2001-06-21 | 2003-01-10 | Shinko Electric Ind Co Ltd | 電子部品の実装基板及び実装構造 |
US6762122B2 (en) * | 2001-09-27 | 2004-07-13 | Unitivie International Limited | Methods of forming metallurgy structures for wire and solder bonding |
TWI317548B (en) * | 2003-05-27 | 2009-11-21 | Megica Corp | Chip structure and method for fabricating the same |
TWI223425B (en) * | 2003-09-23 | 2004-11-01 | Advanced Semiconductor Eng | Method for mounting passive component on wafer |
JP4372785B2 (ja) * | 2004-06-09 | 2009-11-25 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
TWI370515B (en) * | 2006-09-29 | 2012-08-11 | Megica Corp | Circuit component |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
-
2006
- 2006-11-20 US US11/561,434 patent/US7521287B2/en not_active Expired - Fee Related
-
2007
- 2007-10-31 KR KR1020097009880A patent/KR20090075858A/ko active IP Right Grant
- 2007-10-31 EP EP07822113A patent/EP2097202B1/de not_active Not-in-force
- 2007-10-31 WO PCT/EP2007/061766 patent/WO2008061865A1/en active Application Filing
- 2007-10-31 JP JP2009536694A patent/JP5055634B2/ja not_active Expired - Fee Related
- 2007-10-31 AT AT07822113T patent/ATE497419T1/de not_active IP Right Cessation
- 2007-10-31 DE DE602007012367T patent/DE602007012367D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
US7521287B2 (en) | 2009-04-21 |
DE602007012367D1 (de) | 2011-03-17 |
EP2097202B1 (de) | 2011-02-02 |
US20080119035A1 (en) | 2008-05-22 |
KR20090075858A (ko) | 2009-07-09 |
JP5055634B2 (ja) | 2012-10-24 |
WO2008061865A1 (en) | 2008-05-29 |
EP2097202A1 (de) | 2009-09-09 |
JP2010510648A (ja) | 2010-04-02 |
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