JP2007157857A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】第1電極パッド32と第2電極パッド34の間に、ビア36を環状に配列したことを特徴とする。
【選択図】図1
Description
半導体装置100は、半導体チップ110の中央部分に形成された内部回路112と、半導体チップ110の外周部分に形成された入出力回路114とを備えている。入出力回路114は、複数の入出力セル120から構成されており、入出力セル120は、半導体チップ110の外周部分に一列に配列されている。
先ず、図5(a)に示すように、筒状のキャピラリツール2より金属細線3を引き出し、キャピラリツール2の上部に取り付けられたクランパ機構4によって金属細線3の上部を保持した状態で、放電トーチ手段を用いて例えば放電Aによる通電によって金属細線3の先端を加熱し、これによって図5(b)に示すように金属ボール31を形成する。次に、図5(c)に示すようにキャピラリツール2により金属ボール31を半導体チップ110の端子面13に押し付け、超音波振動を与えることによって、金属ボール31を変形させながら端子面13と結合させる。次に、図5(d)に示すように金属細線3を保持しながらキャピラリツール2を引き上げることによって金属細線3を引き千切り、端子面13にバンプBを形成する方法が用いられている。11は基材となるシリコン層,12は配線層である。金属ボール31をキャピラリツール2によって半導体チップ110の端子面13に押し付ける図5(c)の工程において、その押し付け荷重が半導体チップ110の内部の配線層12に影響し、絶縁膜の亀裂や界面剥離などのダメージNGを引き起こす可能性がある。ワイヤーボンディングの場合にも同様にダメージNGを引き起こす可能性がある。
本発明は、入出力セルごとに従来よりも数少ないビアを設けるだけで、バンプ形成時やワイヤーボンディングする際の衝撃荷重や金属細線の引き千切り時の引張り力から、配線や絶縁膜を保護できる半導体装置を提供することを目的とする。
本発明の請求項4記載の半導体装置は、請求項1において、複数の前記ビアの一部を前記外部接続用電極の径に応じた第1の環状に配列し、前記第1の環状の内側に前記ビアの残りを配設したことを特徴とする。
(実施の形態1)
図1と図2は本発明の(実施の形態1)を示す。
図1(b)はキャピラリツール2により金属ボール31を第1電極パッド32の端子面13に押し付け、超音波振動を与えることによって、金属ボール31を変形させながら第1電極パッド32の端子面と結合させる工程を示している。キャピラリツール2の形状と押し付け力とで決まるバンプBの台座部分の内径をD1とした場合、バンプBの台座部分の内径の直下位置に複数のビア36が環状に並ぶように、複数のビア36の配列されている直径D2は、D2=D1に設定されている。ビア36の断面形状はデザインルール上許容される最小の寸法(例えば、0.4μm程度)にされており、各ビア36の間隔は例えば1〜2μm程度である。ビア36の長さ(高さ)は、第1電極パッド32と第2電極パッド34との間に位置する絶縁膜140の厚さと同じであり、例えば1.0μm程度である。
D2 > D1
の場合にも同様の効果を期待できる。具体的には、複数のビア36の配列されている直径D2は、少なくともバンプBが電極32と接触する外形部分から、キャピラリツール2の内径に相当する部分までの間に設定されればよい。
図3は本発明の(実施の形態2)を示す。
(実施の形態1)の図1(a)では、複数のビア36を直径D2の円周上に配列したが、(実施の形態2)ではこの具体的な配列が異なっている。その他は(実施の形態1)と同じである。
図3(b)では、複数のビア36の一部をバンプBの径に応じた直径D2の第1の環状に配列し、前記第1の環状の内側にビア36の残りを配設している。
D2 複数のビア36の配列の直径
D1 バンプ台座部分の内径
30 積層ビア構造
31 金属ボール
32 第1電極パッド
34 第2電極パッド
36 ビア
42 電源配線
44 最下層配線
46 引き出し配線部
50 半導体チップ外周方向
100 半導体装置
110 半導体チップ
112 内部回路
114 入出力回路
124 保護膜
140 絶縁膜
Claims (5)
- 内部回路と外部回路との電気接続用の入出力パッドを、端子面またはその上層に外部接続用電極が形成される第1電極パッドと、前記第1電極パッドの下層に位置する配線層から形成される第2電極パッドと、前記第1電極パッドと前記第2電極パッドとの間に位置する絶縁膜中に形成され前記第1電極パッドと前記第2電極パッドとを接続する複数のビアとを設けた半導体装置であって、
第1電極パッドの端子面またはその上層に形成された外部接続用電極を有し、複数の前記ビアを、前記外部接続用電極の径に応じた環状に配列した
半導体装置。 - 複数の前記ビアが前記外部接続用電極に応じた直径D2に配列され、前記外部接続用電極の台座部分の内径をD1とした場合、
D2 ≧ D1
である請求項1に記載の半導体装置。 - 複数の前記ビアを、前記外部接続用電極の径に応じた円周の外周側と内周側に交互に配設した
請求項1に記載の半導体装置。 - 複数の前記ビアの一部を前記外部接続用電極の径に応じた第1の環状に配列し、前記第1の環状の内側に前記ビアの残りを配設した
請求項1に記載の半導体装置。 - 複数の前記ビアの一部を前記外部接続用電極の径に応じた第1の環状に配列し、前記第1の環状の外側に前記ビアの残りの少なくとも一部を配設した
請求項1に記載の半導体装置。
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JP2005348562A JP4646789B2 (ja) | 2005-12-02 | 2005-12-02 | 半導体装置 |
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JP2005348562A JP4646789B2 (ja) | 2005-12-02 | 2005-12-02 | 半導体装置 |
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JP2007157857A true JP2007157857A (ja) | 2007-06-21 |
JP4646789B2 JP4646789B2 (ja) | 2011-03-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103295999A (zh) * | 2013-06-03 | 2013-09-11 | 上海宏力半导体制造有限公司 | 引线焊盘以及集成电路 |
WO2023214654A1 (ko) * | 2022-05-03 | 2023-11-09 | 삼성전자 주식회사 | 인터포져를 포함하는 전자 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204283A (ja) * | 1992-09-18 | 1994-07-22 | Lsi Logic Corp | 半導体用ボンドパッド |
JPH08293523A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2000058583A (ja) * | 1998-08-06 | 2000-02-25 | Fujitsu Ltd | 半導体装置 |
-
2005
- 2005-12-02 JP JP2005348562A patent/JP4646789B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204283A (ja) * | 1992-09-18 | 1994-07-22 | Lsi Logic Corp | 半導体用ボンドパッド |
JPH08293523A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2000058583A (ja) * | 1998-08-06 | 2000-02-25 | Fujitsu Ltd | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103295999A (zh) * | 2013-06-03 | 2013-09-11 | 上海宏力半导体制造有限公司 | 引线焊盘以及集成电路 |
WO2023214654A1 (ko) * | 2022-05-03 | 2023-11-09 | 삼성전자 주식회사 | 인터포져를 포함하는 전자 장치 |
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