DE462040T1 - Mos-transistor mit hoher schwellspannung. - Google Patents

Mos-transistor mit hoher schwellspannung.

Info

Publication number
DE462040T1
DE462040T1 DE199191460028T DE91460028T DE462040T1 DE 462040 T1 DE462040 T1 DE 462040T1 DE 199191460028 T DE199191460028 T DE 199191460028T DE 91460028 T DE91460028 T DE 91460028T DE 462040 T1 DE462040 T1 DE 462040T1
Authority
DE
Germany
Prior art keywords
threshold voltage
high threshold
voltage transistor
transistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE199191460028T
Other languages
English (en)
Inventor
Eric F-38700 La Tronche Fr Compagne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hello SA
Original Assignee
Hello SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hello SA filed Critical Hello SA
Publication of DE462040T1 publication Critical patent/DE462040T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE199191460028T 1990-05-17 1991-05-17 Mos-transistor mit hoher schwellspannung. Pending DE462040T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9006408A FR2662303A1 (fr) 1990-05-17 1990-05-17 Transistor mos a tension de seuil elevee.

Publications (1)

Publication Number Publication Date
DE462040T1 true DE462040T1 (de) 1992-04-09

Family

ID=9396860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE199191460028T Pending DE462040T1 (de) 1990-05-17 1991-05-17 Mos-transistor mit hoher schwellspannung.

Country Status (4)

Country Link
US (1) US5239195A (de)
EP (1) EP0462040A1 (de)
DE (1) DE462040T1 (de)
FR (1) FR2662303A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0598146A1 (de) * 1992-11-16 1994-05-25 ALCATEL BELL Naamloze Vennootschap Schutzanordnung gegen elektrostatische Entladungen
US5604369A (en) * 1995-03-01 1997-02-18 Texas Instruments Incorporated ESD protection device for high voltage CMOS applications
TW320772B (en) * 1996-09-23 1997-11-21 United Microelectronics Corp Protection component and production method for low voltage static discharge
US6133077A (en) 1998-01-13 2000-10-17 Lsi Logic Corporation Formation of high-voltage and low-voltage devices on a semiconductor substrate
JP4128763B2 (ja) * 2000-10-30 2008-07-30 株式会社東芝 電圧切り替え回路
US6849508B2 (en) * 2001-06-07 2005-02-01 Amberwave Systems Corporation Method of forming multiple gate insulators on a strained semiconductor heterostructure
JP4302943B2 (ja) * 2002-07-02 2009-07-29 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
US20060108641A1 (en) * 2004-11-19 2006-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Device having a laterally graded well structure and a method for its manufacture
KR101058445B1 (ko) * 2005-05-23 2011-08-24 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112069A (en) * 1977-03-11 1978-09-30 Nippon Telegr & Teleph Corp <Ntt> Production of mis transistor
JPS5619671A (en) * 1979-07-26 1981-02-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of insulated gate type field effect transistor
JPS56124258A (en) * 1980-03-05 1981-09-29 Hitachi Ltd Manufacturing of semiconductor device
JPS57106078A (en) * 1980-12-23 1982-07-01 Toshiba Corp Mos semiconductor device
DE3330851A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
DE3586268T2 (de) * 1984-05-03 1993-02-25 Digital Equipment Corp Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
JPS61171165A (ja) * 1985-01-25 1986-08-01 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
JPS62101074A (ja) * 1985-10-28 1987-05-11 Hitachi Ltd 半導体装置
JPH065745B2 (ja) * 1986-07-31 1994-01-19 株式会社日立製作所 半導体装置
US4990983A (en) * 1986-10-31 1991-02-05 Rockwell International Corporation Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming
JPS63129657A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd エンハンスメント／デプリ−シヨンゲ−ト型高耐圧半導体装置及びその製造方法
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
US5047820A (en) * 1988-09-14 1991-09-10 Micrel, Inc. Semi self-aligned high voltage P channel FET

Also Published As

Publication number Publication date
US5239195A (en) 1993-08-24
FR2662303A1 (fr) 1991-11-22
EP0462040A1 (de) 1991-12-18

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