DE68914060D1 - Bipolares ram mit zustandsabhängigem schreibstrom. - Google Patents

Bipolares ram mit zustandsabhängigem schreibstrom.

Info

Publication number
DE68914060D1
DE68914060D1 DE89902477T DE68914060T DE68914060D1 DE 68914060 D1 DE68914060 D1 DE 68914060D1 DE 89902477 T DE89902477 T DE 89902477T DE 68914060 T DE68914060 T DE 68914060T DE 68914060 D1 DE68914060 D1 DE 68914060D1
Authority
DE
Germany
Prior art keywords
write current
conditional write
bipolar ram
bipolar
ram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89902477T
Other languages
English (en)
Other versions
DE68914060T2 (de
Inventor
A Hashemi
Robert Reinschmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Digital Equipment Corp
Original Assignee
Digital Equipment Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Digital Equipment Corp filed Critical Digital Equipment Corp
Application granted granted Critical
Publication of DE68914060D1 publication Critical patent/DE68914060D1/de
Publication of DE68914060T2 publication Critical patent/DE68914060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
DE68914060T 1988-02-11 1989-02-13 Bipolares ram mit zustandsabhängigem schreibstrom. Expired - Fee Related DE68914060T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/155,021 US4853898A (en) 1988-02-11 1988-02-11 Bipolar ram having state dependent write current
PCT/US1989/000565 WO1989007827A1 (en) 1988-02-11 1989-02-13 Bipolar ram having state dependent write current

Publications (2)

Publication Number Publication Date
DE68914060D1 true DE68914060D1 (de) 1994-04-28
DE68914060T2 DE68914060T2 (de) 1994-10-06

Family

ID=22553813

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914060T Expired - Fee Related DE68914060T2 (de) 1988-02-11 1989-02-13 Bipolares ram mit zustandsabhängigem schreibstrom.

Country Status (5)

Country Link
US (1) US4853898A (de)
EP (1) EP0354950B1 (de)
JP (1) JPH02501605A (de)
DE (1) DE68914060T2 (de)
WO (1) WO1989007827A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239496A (ja) * 1989-03-13 1990-09-21 Fujitsu Ltd 半導体記憶装置
US5179538A (en) * 1989-06-30 1993-01-12 The Boeing Company Memory system including CMOS memory cells and bipolar sensing circuit
DE69015371T2 (de) * 1990-05-17 1995-07-13 Ibm Lese-/schreibe-/wiederherstellungsschaltung für speichermatrizen.
JP3965287B2 (ja) * 2001-10-09 2007-08-29 シャープ株式会社 不揮発性半導体記憶装置およびその書き込み時間決定方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105890A (en) * 1979-01-31 1980-08-13 Fujitsu Ltd Memory control system
JPS564263A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Semiconductor memory
FR2460460A1 (fr) * 1979-06-28 1981-01-23 Rivoire Jacques Dispositif cryogenique stable et precis
JPS5788592A (en) * 1980-11-21 1982-06-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor storage circuit device
JPS57164489A (en) * 1981-03-31 1982-10-09 Fujitsu Ltd Semicondutor memory
US4742488A (en) * 1982-10-25 1988-05-03 Advanced Micro Devices, Inc. Sense amplifier/write circuit for semiconductor memories
JPS59151386A (ja) * 1983-01-31 1984-08-29 Fujitsu Ltd 半導体記憶装置
JPS6066388A (ja) * 1983-09-22 1985-04-16 Fujitsu Ltd 半導体記憶装置
US4570238A (en) * 1985-06-24 1986-02-11 Motorola, Inc. Selectable write current source for bipolar rams

Also Published As

Publication number Publication date
DE68914060T2 (de) 1994-10-06
WO1989007827A1 (en) 1989-08-24
EP0354950B1 (de) 1994-03-23
US4853898A (en) 1989-08-01
EP0354950A4 (en) 1991-03-20
JPH02501605A (ja) 1990-05-31
EP0354950A1 (de) 1990-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee