KR970053619A - 온도센서를 가진 전계효과 제어가능 전력 반도체 장치 - Google Patents

온도센서를 가진 전계효과 제어가능 전력 반도체 장치 Download PDF

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KR970053619A
KR970053619A KR1019960068815A KR19960068815A KR970053619A KR 970053619 A KR970053619 A KR 970053619A KR 1019960068815 A KR1019960068815 A KR 1019960068815A KR 19960068815 A KR19960068815 A KR 19960068815A KR 970053619 A KR970053619 A KR 970053619A
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South Korea
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semiconductor device
power semiconductor
region
field effect
controllable power
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KR1019960068815A
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English (en)
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요제프-마티아스 간티올러
홀거 하일
노르베르트 크리슈케
Original Assignee
로더리히 네테부쉬; 롤프 옴케
지멘스 악티엔게젤샤프트
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Publication of KR970053619A publication Critical patent/KR970053619A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Abstract

본 발명은 온도센서를 가진 전계효과 제어가능 전력 반도체 장치에 관한 것이다. 온도센서는 바이폴라 트랜지스터(6)를 포함하며, 전력 MOSFET(1)또는 IGBT의 셀 어레이에 인접하여 배열된다. 전력 반도체장치에 걸리는 전압강하에 무관하게 온도를 검출하기 위해서, 동일한 도전형태의 영역(30)은 셀 어레이 및 베이스 영역사이에 배열되며 고정된 바이어스 전압단자(Uf)에 접속된다.

Description

온도센서를 가진 전계효과 제어가능 전력 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 전력 반동체장치에 대한 단면도이다.

Claims (7)

  1. 서로 병렬로 접속된 다수의 셀과, 바이폴라 트랜지스터를 가지며 전력 반도체 장치의 셀 어레이에 인접하여 배열되는 온도센서를 구비하는 전계효과 제어가능 전력 반도체장치(1)로서, (a)상기 바이폴라 트랜지스터의 베이스영역(26)및 상기 전력 반도체 장치의 게이트 영역(20)이 동일한 도전형태를 가지며, (b)상기 바이폴라 트랜지스터의 콜렉터영역 및 상기 전력 반도체 장치의 드레인 영역이 상기 전력 반도체 장치의 반도체몸체(15)의 단일 영역(16)에 의해 형성되는 특징을 가지는 전계효과 제어가능 전력 반도체장치에 있어서, 동일한 도전형태를 가진 적어도 하나의 영역(30)은 상기 바이폴라 트랜지스터의 베이스 영역 및 상기 전력 반도체장치 셀의 게이트 영역사이에 배열되며, 상기 전력 반도체장치에 공급된 공급전압(Vbb)보다 작거나 또는 동일한 고정 바이어스 전압(Uf)에 접속되는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  2. 제1항에 있어서, 상기 고정 바이어스 전력은 두 개의 다른 전압값(Uf1,Uf2)사이에서 변경될 수 있는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 상기 영역(30)은 적어도 상기 게이트 영역(20,22)과 동일한 도핑을 가지는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 영역(30)은 적어도 상기 게이트 영역(20,22)과 동일한 도핑을 가지는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 바이폴라 트랜지스터의 상기 베이스 영역(26)및 상기 영역(30)사이의 상기 반도체 장치의 표면은 상기 반도체 장치의 표면으로부터 절연되는 전극(33)으로 덮히며, 상기 전극은 영역(30)또는 베이스 영역(26)중 하나에 전기적으로 접속되는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 전극(33)은 도핑도니 폴리실리콘으로 이루어지는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 전류종속 저항(14)은 바이폴라 트랜지스터의 베이스 단자(B)및 에미터 단자(E)사이에 접속되며, 소정 전류 이하의 제1레지스턴스와 소정 전류 이상의 제2고레지스턴스를 가지는 것을 특징으로 하는 전계효과 제어가능 전력 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960068815A 1995-12-21 1996-12-20 온도센서를 가진 전계효과 제어가능 전력 반도체 장치 KR970053619A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19548060A DE19548060A1 (de) 1995-12-21 1995-12-21 Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
DE19548060.0 1995-12-21

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KR970053619A true KR970053619A (ko) 1997-07-31

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US (1) US5828263A (ko)
EP (1) EP0780672B1 (ko)
JP (1) JPH09186329A (ko)
KR (1) KR970053619A (ko)
DE (2) DE19548060A1 (ko)
TW (1) TW309661B (ko)

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Publication number Publication date
US5828263A (en) 1998-10-27
DE19548060A1 (de) 1997-06-26
TW309661B (ko) 1997-07-01
DE59610297D1 (de) 2003-05-08
EP0780672A1 (de) 1997-06-25
JPH09186329A (ja) 1997-07-15
EP0780672B1 (de) 2003-04-02

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