DE69120367D1 - Ladungsübertragungs- und/oder Verstärkungsanordnung - Google Patents

Ladungsübertragungs- und/oder Verstärkungsanordnung

Info

Publication number
DE69120367D1
DE69120367D1 DE69120367T DE69120367T DE69120367D1 DE 69120367 D1 DE69120367 D1 DE 69120367D1 DE 69120367 T DE69120367 T DE 69120367T DE 69120367 T DE69120367 T DE 69120367T DE 69120367 D1 DE69120367 D1 DE 69120367D1
Authority
DE
Germany
Prior art keywords
charge transfer
amplification arrangement
amplification
arrangement
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120367T
Other languages
English (en)
Other versions
DE69120367T2 (de
Inventor
Masaharu Hamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69120367D1 publication Critical patent/DE69120367D1/de
Application granted granted Critical
Publication of DE69120367T2 publication Critical patent/DE69120367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69120367T 1990-10-12 1991-10-09 Ladungsübertragungs- und/oder Verstärkungsanordnung Expired - Fee Related DE69120367T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2274219A JPH04148536A (ja) 1990-10-12 1990-10-12 転送電荷増幅装置

Publications (2)

Publication Number Publication Date
DE69120367D1 true DE69120367D1 (de) 1996-07-25
DE69120367T2 DE69120367T2 (de) 1997-02-13

Family

ID=17538687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120367T Expired - Fee Related DE69120367T2 (de) 1990-10-12 1991-10-09 Ladungsübertragungs- und/oder Verstärkungsanordnung

Country Status (5)

Country Link
US (1) US5229630A (de)
EP (1) EP0480412B1 (de)
JP (1) JPH04148536A (de)
KR (1) KR920008964A (de)
DE (1) DE69120367T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3401808B2 (ja) * 1992-04-16 2003-04-28 ソニー株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
DE69512505T2 (de) * 1994-06-23 2000-04-13 Koninklijke Philips Electronics N.V., Eindhoven Ladungsgekoppelte anordnung und bildaufnahmevorrichtung die diese ladungsgekoppelte anordnung enthält
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
DE2911726C2 (de) * 1978-03-27 1985-08-01 Ncr Corp., Dayton, Ohio Verfahren zur Herstellung eines Feldeffekttransistors
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS61187368A (ja) * 1985-02-15 1986-08-21 Toshiba Corp 電荷転送装置
JP2666928B2 (ja) * 1987-07-13 1997-10-22 株式会社東芝 電荷転送素子の出力検出器
JPH0771235B2 (ja) * 1989-01-10 1995-07-31 三菱電機株式会社 電荷検出回路の駆動方法

Also Published As

Publication number Publication date
EP0480412A2 (de) 1992-04-15
JPH04148536A (ja) 1992-05-21
US5229630A (en) 1993-07-20
EP0480412A3 (en) 1993-04-21
EP0480412B1 (de) 1996-06-19
DE69120367T2 (de) 1997-02-13
KR920008964A (ko) 1992-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee