KR840000988A - 절연 게이트형 전계효과 트랜지스터 - Google Patents

절연 게이트형 전계효과 트랜지스터 Download PDF

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KR840000988A
KR840000988A KR1019820003261A KR820003261A KR840000988A KR 840000988 A KR840000988 A KR 840000988A KR 1019820003261 A KR1019820003261 A KR 1019820003261A KR 820003261 A KR820003261 A KR 820003261A KR 840000988 A KR840000988 A KR 840000988A
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South Korea
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region
effect transistor
field effect
insulated gate
gate field
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KR1019820003261A
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English (en)
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요시오(외 1) 사가이
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미쓰다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Publication of KR840000988A publication Critical patent/KR840000988A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

절연 게이트형 전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도A, 제1도B는 본 발명에 실시예의 단면도 및 평면도.

Claims (11)

  1. 제1도 전형의 반도체 기판과, 그 반도체 기판위에 부설되고 또, 개구부를 가지는 제2도전형의 웰 영역과, 상기의 웰 영역의 표면에서 또, 전기의 개구부를 사이에 두고 대향하는 영역에 각각 부설된 제1도 전형의 소오스, 드레인 영역과, 상기의 소스영역과 드레인 영역사이에 둘러싸인 영역을 적어도 덮고 있도록 전기의 반도체 기판의 표면에 부설된 절연층과, 상기의 절연층상에 부설된 게이트 전극과를 가지는 절연게이트형 전계 효과 트랜지스터.
  2. 전기의 웰 영역은 전기의 반도체 기판보다도 높은 불순물 농도를 갖는 것을 특징으로하는 특허청구범위 1의 절연게이트형 전계효과 트랜지스터.
  3. 전기의 소스영역과 전기의 드레인 영역의 1부는 각각 전기개구부가운데로 돌출되어 부설되어진 것을 특징으로하는 특허청구범위 1의 절연게이트형 전계효과 트랜지스터.
  4. 전기의 소오스 영역과 드레인 영역사이의 상기 기판 표면 영역에는 제2도전형의 불순물층이 부설되어 있는 것을 특징으로하는 특허청구범위 1의 절연게이트형 전계 효과 트랜지스터.
  5. 전기의 제2도전형의 불순물층의 두께는 0.5㎛이하인 것을 특징으로하는 특허청구범위 4의 절연 게이트형 전계 효과 트랜지스터.
  6. 상기의 기판과 상기의 웰 영역사이의 접합이 역 바이어스가 되도록 상기 기판과 상기 웰 영역의 전위를 설정하는 바이어스 수단을 더 포함하는 것을 특징으로하는 특허청구범위 1,2,3 또는 4의 절연게이트형 전계효과 트랜지스터.
  7. 상기의 바이어스 수단에 의하여 상기의 웰 영역의 개구부가 공핍층으로 채워져 있는 것을 특징으로하는 특허청구범위 6의 절연게이트형 전계 효과 트랜지스터.
  8. 상기의 바이어스 수단에 의하여 상기의 웰 영역의 개구부의 일부분에 공핍층이 형성되는 것을 특징으로 하는 특허청구범위 6의 절연 게이트형 전계 효과 트랜지스터.
  9. 상보형 MOS회로와 동일한 반도체 췹내에 부설된 유기 특허청구범위 1,2,3 또는 4의 절연 게이트형 전계 효과 트랜지스터.
  10. 상기 게이트 전극과 상기 소오스 영역이 전기적으로 접속된 상기 특허청구범위 1,2 또는 9의 절연 게이트형 전계효과 트랜지스터.
  11. 상기의 드레인 영역이 하나의 전원에 접속되고 상기 소스 영역과 상기 게이트 전극과의 공통단에 접속된 논리 회로망에 의하여 구동되며, 또 그 공통단 이 출력 단자가 되는 특허청구범위 10의 절연 게이트형 전계 효과 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820003261A 1981-07-22 1982-07-21 절연 게이트형 전계효과 트랜지스터 KR840000988A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56-113692 1981-07-22
JP56113692A JPS5816565A (ja) 1981-07-22 1981-07-22 絶縁ゲ−ト形電界効果トランジスタ

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KR840000988A true KR840000988A (ko) 1984-03-26

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KR1019820003261A KR840000988A (ko) 1981-07-22 1982-07-21 절연 게이트형 전계효과 트랜지스터

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EP (1) EP0070744B1 (ko)
JP (1) JPS5816565A (ko)
KR (1) KR840000988A (ko)
CA (1) CA1189637A (ko)
DE (1) DE3270103D1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
DE69027312T2 (de) * 1989-03-02 1997-01-30 Thunderbird Tech Inc Feldeffekttransistor mit fermi-schwellenspannung
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
AU2003293540A1 (en) * 2002-12-13 2004-07-09 Raytheon Company Integrated circuit modification using well implants

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615938A (en) * 1969-01-28 1971-10-26 Westinghouse Electric Corp Method for diffusion of acceptor impurities into semiconductors
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device

Also Published As

Publication number Publication date
DE3270103D1 (en) 1986-04-30
JPS5816565A (ja) 1983-01-31
EP0070744A3 (en) 1983-10-05
EP0070744A2 (en) 1983-01-26
CA1189637A (en) 1985-06-25
EP0070744B1 (en) 1986-03-26

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